MATSUKI-ME2N7002E
| Part # | MATSUKI-ME2N7002E |
Download  | MATSUKI-ME2N7002E |
ME2N7002E
N-Channel MOSFET
GENERAL DESCRIPTION
FEATURES
●
●
●
60V / 0.50A , R
DS(ON)
= 5.0
Ω
@VGS=10V
60V / 0.30A , R
DS(ON)
= 5.5
Ω
@VGS=4.5V
Super high density cell design for extremely
low R
DS (ON)
The ME2N7002E is the N-Channel enhancement mode field effect
transistors are produced using high cell density DMOS technology.
These products have been designed to minimize on-state resistance
while provide rugged, reliable, and fast switching performance. They
can be used in most applications requiring up to 300mA DC and can
deliver pulsed currents up to 1.2A. These products are particularly
suited for low voltage, low current applications such as small servo
motor control, power MOSFET gate drivers, and other switching
applications.
●
●
Exceptional on-resistance and maximum
DC current capability
SOT-23 package design
APPLICATIONS
●
●
●
●
●
High density cell design for low R
DS(ON)
Voltage controlled small signal switch
Rugged and reliable
PIN CONFIGURATION
High saturation current capability.
The soldering temperature and time shall not exceed
260
℃
for more than 10 seconds.
(SOT-23)
T
o
p View
Maximum ratings and electrical characteristic
Ratings at 25
°
C ambient temperature unless otherwise specified
Symbol
V
DSS
PARAMETER
Typical
Units
Drain-Source Voltage
60
V
V
V
±
±
20
40
V
GSS
Gate-Source Voltage – Continuous
Gate-Source Voltage – Non Repetitive (tp < 50
μ
s)
Drain Current – Continuous (T
J
=150
°
C)
– Pulsed (Note 1)
V
GSS
300
1200
T
A
=25
°
C
T
A
=25
°
C
I
D
mA
P
D
T
J
, T
STG
R
θ
JA
Power Dissipation
350
mW
°
C
Operating and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
-55 ~ +150
375
°
C/W
Note :
1. Pulse
width limited by safe operating area
Ma
y
,2006-Ver3.1
01
ME2N7002E
N-Channel MOSFET
Maximum ratings and electrical characteristic
Ratings at 25
°
C ambient temperature unless otherwise specified
Symbol
Ratings
Test Conditions
Min Typ Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250
μ
A
60
–
–
–
–
V
V
DS
=60V, V
GS
=0V
1
I
DSS
Zero Gate Voltage Drain Current
μ
A
V
DS
=60V, V
GS
=0V
T
J
=125
°
C
10
I
GSSF
I
GSSR
Gate-Body Leakage, Forward
Gate-Body Leakage, Reverse
V
DS
=0V, V
GS
= 20V
–
–
–
–
100
nA
V
DS
=0V, V
GS
= -20V
-100 nA
ON CHARACTERISTIC (Note1)
V
GS(th)
Gate Threshold Voltage
V
GS
= V
DS
, I
D
=250
μ
A
1
–
1.7
2.5
V
V
GS
= 10V, I
D
=500mA
2.5
3.3
–
5
R
DS(ON)
Static Drain-Source On-Resistance
Ω
V
GS
= 4.5V, I
D
=300mA
5.5
0.35
I
SD
Source-drain Current
–
–
–
–
A
A
S
V
–
1.4
I
SDM
(2)
G
FS
(1)
V
SD
(1)
Source-drain Current (pulsed)
Forward Trans-conductance
Diode Forward Voltage
V
DS
=10V
, I
D
=500mA
0.6
–
V
GS
= 0V , I
S
=0.12mA
0.85 1.5
DYNAMIC CHARACTERISTICS
C
ISS
C
OSS
C
RSS
Q
G
Input Capacitance
–
–
–
–
–
–
–
–
–
–
43
20
6
–
V
DS
=25V,V
GS
=0V,
pF
nC
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
–
F=1.0MHz
–
1.4
0.8
0.5
6
2.0
V
DD
=30V, I
D
=1A ,V
GS
= 5V
Q
GS
Gate-Source Charge
Gate-Drain Charge
–
–
–
–
–
–
Q
GD
TD
(ON)
T
R
Turn-On Time
Turn-Off Time
5
V
DD
=30V,R
G
=4.7
Ω
,
nS
I
D
=500mA V
GS
= 4.5V
TD
(OFF)
T
R
15
6
(1) Pulsed:
Pulse duration = 300
μ
s, duty cycle 1.5 %.
(2) Pulse
width limited by safe operating area.
02
ME2N7002E
N-Channel MOSFET
Typical Characteristics (T
J
=25
℃
Noted)
03
ME2N7002E
N-Channel MOSFET
Typical Characteristics (T
J
=25
℃
Noted)
04
ME2N7002E
N-Channel MOSFET
SOT-23 Package Outline
MILLIMETERS
DIM
MIN
2.70
1.20
0.9
MAX
3.1
A
B
C
D
G
H
J
1.6
1.3
0.35
1.70
0.013
0.085
0.45
0.89
2.20
0.45
0.50
2.10
0
.
15
0.2
K
L
0.7
1.02
2.80
0.60
S
V
S 7 2
Body Marking Code :
1. : S72
2. : 702
05
