MATSUKI-ME4411-G
| Part # | MATSUKI-ME4411-G |
Download  | MATSUKI-ME4411-G |
ME4411/ME4411-G
P-Channel 30V (D-S) MOSFET
GENERAL DESCRIPTION
FE
A
T
URES
●
R
DS(ON)
≦
10
mΩ@V
GS
=-10V
The ME4411-G is the P-Channel logic enhancement mode power
field effect transistors are produced using high cell density , DMOS
trench technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits
where high-side switching and low in-line power loss are needed in a
very small outline surface mount package.
●
R
DS(ON)
≦
13
mΩ@V
GS
=-4.5V
●
Super high density cell design for extremely low R
DS(ON)
●
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
●
Power Management in Note book
●
Portable Equipment
●
Battery Powered System
●
DC/DC Converter
●
Load Switch
●
DSC
●
LCD Display inverter
PIN CONFIGUR
A
T
ION
(SOP-8)
T
o
p View
e
Ordering Information
: ME4411 (Pb-free)
ME4411-G (Green product-Halogen free )
Absolute Maximum Ratings
(T
A
=25
℃
Unless Otherwise Noted)
Parameter
Symbol
Unit
V
Maximum Ratings
Drain-Source Voltage
V
DS
V
GS
-30
±20
Gate-Source Voltage
V
T
A
=25
℃
T
A
=70
℃
-12.5
-10
Continuous DrainCurrent
*
I
D
A
Pulsed Drain Current
Avalanche Current
I
DM
I
AR
-50
A
A
-42
E
AS
mJ
Avalanche Energy with Single Pulse(L=0.1mH)
88.2
2.5
T
A
=25
℃
Maximum Power Dissipation
*
T
A
=70
℃
P
D
W
1.6
Operating Junction
T
e
mperature
T
J
-55 to 150
50
℃
R
θJA
Thermal Resistance-Junction to Ambient
*
℃
/W
DCC
*The device mounted on 1in
2
FR4 board with 2 oz copper
正式發行
01
Aug,2016-Ver1.6
ME4411/ME4411-G
P-Channel 30V (D-S) MOSFET
Electrical Characteristics
(T
A
=25
℃
Unless Otherwise Specified)
Symbol
STATIC
V
(BR)DSS
V
GS(th)
I
GSS
Parameter
Limit
Min
Typ
Max Unit
V
GS
=0
V
,
I
D
=-250
μ
A
V
DS
=V
GS
, I
D
=-250
μ
A
V
DS
=0
V
,
V
GS
=±20V
V
DS
=-30
V
,
V
GS
=0V
V
GS
=-10
V
,
I
D
= -13A
V
GS
=-4.5
V
,
I
D
= -10A
I
S
=-2.7A, V
GS
=0V
Drain-Source Breakdown Voltage
Gate Threshold Voltage
-30
-1
V
-3
±100
-1
V
Gate Leakage Current
nA
μ
A
I
DSS
Zero Gate Voltage Drain Current
8.3
10
10
Drain-Source On-State Resistance
a
Diode Forward Voltage
m
Ω
R
DS(ON)
13
V
SD
-0.74
1.2
V
DYNAMIC
Qg
T
o
tal Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
V
DS
=-15
V
,
V
GS
=-10
V
,
I
D
=-13A
V
DS
=-15
V
,
V
GS
=-4.5
V
,
I
D
=-13A
V
GS
=0
V
,
V
DS
=0
V
,
f
=1MH
Z
83.2
41
Qg
nC
Qgs
Qgd
Rg
12
17.7
5.6
Ω
Ciss
Coss
Crss
t
d(on)
t
r
Input capacitance
3790
468
381
48
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
DS
=-15
V
,
V
GS
=0
V
,
f
=1MHz
pF
V
DD
=-15
V
,
R
L
=15
Ω
I
D
=-1A, V
GEN
=-10V
R
G
=6
Ω
20.9
274
80.2
ns
t
d(off)
t
f
Notes: a.
Pulse test: pulse width
≦
300us, duty cycle
≦
2%, Guaranteed by design, not subject to production testing.
b.
Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
DCC
正式發行
02
Aug,2016-Ver1.6
ME4411/ME4411-G
P-Channel 30V (D-S) MOSFET
Typical Characteristics (T
J
=25
℃
Noted)
DCC
正式發行
03
Aug,2016-Ver1.6
ME4411/ME4411-G
P-Channel 30V (D-S) MOSFET
Typical Characteristics (T
J
=25
℃
Noted)
DCC
正式發行
04
Aug,2016-Ver1.6
ME4411/ME4411-G
P-Channel 30V (D-S) MOSFET
SOP-8 Package Outline
MILLIMETERS (mm)
DIM
MIN
1.35
0.10
0.35
0.18
4.80
3.80
MAX
1.75
0.25
0.49
0.25
5.00
4.00
A
A1
B
C
D
E
e
1.27 BSC
H
5.80
0.40
0
°
6.20
1.25
7
°
L
θ
Note: 1. Refer to JEDEC MS-012AA.
2. Dimension
“
D
”
does not include mold flash, protrusions
or gate burrs . Mold flash, protrusions or gate burrs shall not
exceed 0.15 mm per side.
DCC
正式發行
05
Aug,2016-Ver1.6
