MATSUKI-ME4565A-G
| Part # | MATSUKI-ME4565A-G |
Download  | MATSUKI-ME4565A-G |
ME4565A/ ME4565A-G
N- and P-Channel 40-V (D-S) MOSFET
GENERAL DESCRIPTION
FEATURES
●
R
DS(ON)
≦
26.5m
Ω
@V
GS
=10V (N-Ch)
The ME4565A is the N and P-Channel logic enhancement mode
power field effect transistors are produced using high cell density ,
DMOS trench technology. This high density process is especially
tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as cellular phone
and notebook computer power management and other battery
powered circuits where high-side switching, and low in-line power
loss are needed in a very small outline surface mount package.
●
R
DS(ON)
≦
45m
Ω
@V
GS
=4.5V (N-Ch)
●
R
DS(ON)
≦
44m
Ω
@V
GS
=-10V (P-Ch)
●
R
DS(ON)
≦
60m
Ω
@V
GS
=
-4.5V
(P-Ch)
●
Super high density cell design for extremely low R
DS(ON)
●
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
●
Power Management in Note book
●
Portable Equipment
●
Battery Powered System
●
DC/DC Converter
PIN CONFIGURATION
●
Load Switch
(SOP-8)
●
LCD Display inverter
T
o
p View
e
Ordering Information
: ME4565A (Pb-free)
ME4565A-G (Green product-Halogen free )
Absolute Maximum Ratings
(T
A
=25
℃
Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Symbol
V
DSS
N-Channel
P-Channel
Unit
V
40
±20
6.9
5.5
27
-40
±20
-5.3
-4.3
-21
2
Gate-Source Voltage
Continuous Drain
Current(Tj=150
℃
)*
V
GSS
V
T
A
=25
℃
T
A
=70
℃
I
D
A
A
Pulsed Drain Current
I
DM
P
D
T
A
=25
℃
T
A
=70
℃
2
Maximum Power Dissipation
Operating Junction
T
e
mperature
W
1.3
1.3
℃
T
J
-55 to 150
℃
/
W
Thermal Resistance-Junction to Ambient*
R
θ
JA
62.5
62.5
*The device mounted on 1in
2
FR4 board with 2 oz copper
DCC
正式發行
01
Apr, 2010-Ver1.0
ME4565A/ ME4565A-G
N Channel 40-V (D-S) MOSFET
Electrical Characteristics
(T
A
=25
℃
Unless Otherwise Specified)
Symbol Parameter
STATIC
Limit
Min
Typ
Max
Unit
V
GS
=0
V
, I
D
=250
μ
A
V
DS
=V
GS
, I
D
=250
μ
A
V
(BR)DSS
Drain-Source Breakdown Voltage
40
1
V
V
V
GS(th)
I
GSS
Gate Threshold Voltage
3
±100
1
Gate Leakage Current
V
DS
=0
V
, V
GS
=±20V
V
DS
=40
V
,
V
GS
=0V
V
GS
=10
V
, I
D
=5.2A
V
GS
=4.5
V
,
I
D
=4.9A
I
S
=6A, V
GS
=0V
nA
μ
A
I
DSS
Zero Gate Voltage Drain Current
22
35
26.5
45
Drain-Source On-State Resistance
a
Diode Forward Voltage
m
Ω
R
DS(ON)
V
SD
0.86
1.2
V
DYNAMIC
Qg
T
o
tal Gate Charge
V
DS
=20
V
,
V
GS
=10
V
, I
D
=6A
V
DS
=20
V
,
V
GS
=4.5
V
,
I
D
=6A
15
7
Qg
T
o
tal Gate Charge
nC
Qgs
Qgd
Ciss
Coss
Crss
Rg
Gate-Source Charge
Gate-Drain Charge
Input capacitance
4.1
3.4
565
76
24
1
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
=15
V
,
V
GS
=0
V
, F=1MHz
V
DS
=0
V
, V
GS
=0
V
, f=1MHz
pF
Ω
Turn-On Delay Time
13
t
d(on)
Turn-On Rise Time
14
t
r
V
DD
=15
V
,
R
L
=15
Ω
ns
I
D
=1A, V
GEN
=10
V
,
R
G
=6
Ω
Turn-Off Delay Time
Turn-On Fall Time
36
4
t
d(off)
t
f
Notes: a.
Pulse test: pulse width
≦
300us, duty cycle
≦
2%, Guaranteed by design, not subject to production testing.
b
.
Matsuki reserves the right to improve product design, functions and reliability without notice.
DCC
正式發行
02
Apr, 2010-Ver1.0
ME4565A/ ME4565A-G
N Channel 40-V (D-S) MOSFET
Typical Characteristics (T
J
=25
℃
Noted)
DCC
正式發行
03
Apr, 2010-Ver1.0
ME4565A/ ME4565A-G
N Channel 40-V (D-S) MOSFET
Typical Characteristics (T
J
=25
℃
Noted)
DCC
正式發行
04
Apr, 2010-Ver1.0
ME4565A/ ME4565A-G
P Channel 40-V (D-S) MOSFET
Electrical Characteristics
(T
A
=25
℃
Unless Otherwise Specified)
Symbol Parameter
STATIC
Limit
Min
Typ
Max
Unit
V
GS
=0
V
, I
D
=-250
μ
A
V
DS
=V
GS
, I
D
=-250
μ
A
V
(BR)DSS
Drain-Source Breakdown Voltage
-40
-1
V
V
V
GS(th)
I
GSS
Gate Threshold Voltage
-3
±100
-1
Gate Leakage Current
V
DS
=0
V
, V
GS
=±20V
V
DS
=-40
V
, V
GS
=0V
V
GS
=-10
V
,
I
D
= -5A
V
GS
=-4.5
V
, I
D
= -2A
I
S
=-5 A, V
GS
=0V
nA
μ
A
I
DSS
Zero Gate Voltage Drain Current
36
47
44
Drain-Source On-State Resistance
a
Diode Forward Voltage
m
Ω
R
DS(ON)
60
V
SD
-0.86
-1.2
V
DYNAMIC
Qg
T
o
tal Gate Charge
V
DS
=-20
V
, V
GS
=-10
V
,
I
D
=-5A
V
DS
=-20
V
, V
GS
=-4.5
V
, I
D
=-5A
20
10
Qg
T
o
tal Gate Charge
nC
pF
ns
Qgs
Qgd
Ciss
Coss
Crss
Gate-Source Charge
Gate-Drain Charge
Input capacitance
4.1
4.9
859
126
41
Output Capacitance
Reverse Transfer Capacitance
V
DS
=-15
V
, V
GS
=0
V
, F=1MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
39
19
59
t
d(on)
t
r
V
DD
=-15
V
,
R
L
=15
Ω
I
D
=-1A, V
GEN
=-10
V
,R
G
=6
Ω
t
d(off)
Turn-On Fall Time
9
t
f
Notes: a.
Pulse test: pulse width
≦
300us, duty cycle
≦
2%, Guaranteed by design, not subject to production testing.
b
.
Matsuki reserves the right to improve product design, functions and reliability without notice.
DCC
正式發行
05
Apr, 2010-Ver1.0
ME4565A/ ME4565A-G
P Channel 40-V (D-S) MOSFET
Typical Characteristics (T
J
=25
℃
Noted)
DCC
正式發行
06
Apr, 2010-Ver1.0
ME4565A/ ME4565A-G
P Channel 40-V (D-S) MOSFET
Typical Characteristics (T
J
=25
℃
Noted)
DCC
正式發行
07
Apr, 2010-Ver1.0
ME4565A/ ME4565A-G
N- and P-Channel 40-V (D-S) MOSFET
SOP-8 Package Outline
MILLIMETERS (mm)
Symbol
MIN
1.35
0.10
0.35
0.18
4.80
3.80
MAX
1.75
0.25
0.49
0.25
5.00
4.00
A
A1
B
C
D
E
e
1.27 BSC
H
L
5.80
0.40
0°
6.20
1.25
7°
θ
DCC
正式發行
08
Apr, 2010-Ver1.0
