MATSUKI-ME4565AD4
| Part # | MATSUKI-ME4565AD4 |
Download  | MATSUKI-ME4565AD4 |
ME4565AD4/ME4565AD4-G
N- and P-Channel 40-V (D-S) MOSFET
GENERAL DESCRIPTION
FEATURES
●
R
DS(ON)
≦
30m
Ω
@V
GS
=10V (N-Ch)
●
R
DS(ON)
≦
58m
Ω
@V
GS
=4.5V (N-Ch)
●
R
DS(ON)
≦
45m
Ω
@V
GS
=-10V (P-Ch)
●
R
DS(ON)
≦
75m
Ω
@V
GS
=
-4.5V
(P-Ch)
●
Super high density cell design for extremely low R
DS(ON)
●
Exceptional on-resistance and maximum DC current
capability
The ME4565AD4 is the N and P-Channel logic enhancement mode
power field effect transistors are produced using high cell density ,
DMOS trench technology. This high density process is especially
tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as cellular phone
and notebook computer power management and other battery
powered circuits where high-side switching, and low in-line power
loss are needed in a very small outline surface mount package.
APPLICATIONS
●
Power Management in Note book
●
Portable Equipment
●
Battery Powered System
●
DC/DC Converter
PIN CONFIGURATION
(TO-252-4L)
T
o
p View
●
Load Switch
●
LCD Display inverter
e
Ordering Information
: ME4565AD4 (Pb-free)
ME4565AD4-G (Green product-Halogen free)
Absolute Maximum Ratings
(T
A
=25
℃
Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Symbol
V
DSS
N-Channel
40
P-Channel
-40
Unit
V
Gate-Source Voltage
V
GSS
±25
±25
V
T
C
=25
℃
T
C
=70
℃
T
A
=25
℃
T
A
=70
℃
22.1
17.7
7.4
-18.6
-14.9
-6.1
Continuous Drain
I
D
A
Current(Tj=150
℃
)*
5.9
-5
Pulsed Drain Current
I
DM
P
D
30
-30
A
T
A
=25
℃
T
A
=70
℃
2.6
2.7
Maximum Power Dissipation
Operating Junction
T
e
mperature
W
℃
1.67
1.7
T
J
-55 to 150
Steady
10sec
48
20
Steady
10sec
46
18
D
℃
C
/
W
C
℃
/
W
正式發行
Thermal Resistance-Junction to Ambient*
Thermal Resistance-Junction to Case*
R
θ
JA
R
θ
JC
5.3
5
*The device mounted on 1in
2
FR4 board with 2 oz copper
01
Sep, 2008-Ver1.1
ME4565AD4/ME4565AD4-G
N- and P-Channel 40-V (D-S) MOSFET
Electrical Characteristics
(T
A
=25
℃
Unless Otherwise Specified)
Symbol Parameter
STATIC
Limit
Min
Typ
Max
Unit
V
GS
=0
V
, I
D
=250
μ
A
V
GS
=0
V
, I
D
=250
μ
A
N-Ch
P-Ch
40
-40
V
(BR)DSS
Drain-Source Breakdown Voltage
V
V
DS
=V
GS
, I
D
=250
μ
A
V
DS
=V
GS
, I
D
=-250
μ
A
N-Ch
P-Ch
1
-1
3
-3
V
GS(th)
I
GSS
Gate Threshold Voltage
Gate Leakage Current
V
V
DS
=0
V
, V
GS
=±25V
V
DS
=0
V
, V
GS
=±25V
N-Ch
P-Ch
±100
±100
nA
V
DS
=40
V
,
V
GS
=0V
V
DS
=-40
V
, V
GS
=0V
N-Ch
P-Ch
1
-1
μ
A
I
DSS
Zero Gate Voltage Drain Current
V
DS
=40
V
,
V
GS
=0
V
,T
J
=55
℃
V
DS
=-40
V
, V
GS
=0
V
,T
J
=55
℃
N-Ch
P-Ch
10
-10
V
GS
=10
V
, I
D
= 7A
V
GS
=-10
V
,
I
D
= -7A
N-Ch
P-Ch
23
36
30
45
Drain-Source On-State Resistance
a
Diode Forward Voltage
m
Ω
R
DS(ON)
V
SD
V
GS
=4.5
V
,
I
D
= 6A
V
GS
=-4.5
V
, I
D
= -6A
N-Ch
P-Ch
42
58
58
75
I
S
=1.7A, V
GS
=0V
I
S
=-1.7A, V
GS
=0V
N-Ch
P-Ch
0.7
-0.7
1.2
-1.2
V
DYNAMIC
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
8
10
4
4.3
4
Qg
T
o
tal Gate Charge
Gate-Source Charge
Gate-Drain Charge
N-Channel
V
DS
=20
V
,
V
GS
=4.5
V
,
I
D
=7A
P-Channel
Qgs
Qgd
nC
V
DS
=-20
V
, V
GS
=-4.5
V
, I
D
=-7A
4.5
V
GS
=0
V
, V
DS
=0
V
, f=1MH
Z
V
GS
=0
V
, V
DS
=0
V
, f=1MH
Z
N-Ch
P-Ch
0.7
6
Ω
Rg
Gate Resistance
N-Ch
P-Ch
560
860
Ciss
Coss
Crss
Input capacitance
N-Channel
V
DS
=20
V
,
V
GS
=0
V
, F=1MHz
P-Channel
N-Ch
P-Ch
72
120
Output Capacitance
Reverse Transfer Capacitance
pF
ns
V
DS
=-20
V
, V
GS
=0
V
, F=1MHz
N-Ch
P-Ch
18
35
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
11
30
13
8.5
37
70
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
t
d(on)
t
r
N-Channel
V
DD
=15
V
,
R
L
=15
Ω
I
D
=1A, V
GEN
=10
V
,
R
G
=6
Ω
P-Channel
t
d(off)
V
DD
=-15
V
,
R
L
=15
Ω
I
D
=-1A, V
GEN
=-10
V
,R
G
=6
Ω
N-Ch
P-Ch
3.5
7
Turn-On Fall Time
t
f
Notes: a. Pulse test; pulse width
≦
300us, duty cycle
≦
2%
DCC
正式發行
02
Sep, 2008-Ver1.1
ME4565AD4/ME4565AD4-G
N- and P-Channel 40-V (D-S) MOSFET
Typical Characteristics (T
J
=25
℃
Noted)
N-CHANNEL
DCC
正式發行
03
Sep, 2008-Ver1.1
ME4565AD4/ME4565AD4-G
N- and P-Channel 40-V (D-S) MOSFET
Typical Characteristics (T
J
=25
℃
Noted)
N-CHANNEL
DCC
正式發行
04
Sep, 2008-Ver1.1
ME4565AD4/ME4565AD4-G
N- and P-Channel 40-V (D-S) MOSFET
Typical Characteristics (T
J
=25
℃
Noted)
P-CHANNEL
DCC
正式發行
05
Sep, 2008-Ver1.1
ME4565AD4/ME4565AD4-G
N- and P-Channel 40-V (D-S) MOSFET
Typical Characteristics (T
J
=25
℃
Noted)
P-CHANNEL
DCC
正式發行
06
Sep, 2008-Ver1.1
ME4565AD4/ME4565AD4-G
N- and P-Channel 40-V (D-S) MOSFET
TO-252-4L Package
MILLIMETERS (mm)
DIM
MIN
2.20
1.10
0.30
0.55
0.40
0.40
5.20
6.50
2.20
6.30
4.50
9.50
1.30
0.90
0.50
0.00
1.20
MAX
2.50
1.30
0.75
0.75
0.80
0.60
5.70
7.30
3.00
6.70
5.50
10.50
1.70
1.70
1.10
0.30
1.40
A
A1
B
B1
B2
C
D
D2
D3
E
E2
H
L
L1
L2
L3
P
DCC
正式發行
07
Sep, 2008-Ver1.1
