MATSUKI-ME4835
| Part # | MATSUKI-ME4835 |
Download  | MATSUKI-ME4835 |
ME4
8
335
P-Channel 30-V (D-S) MOSFET
GENERAL DESCRIPTION
FEATURES
●
R
DS(ON)
≦
20m
Ω
@V
GS
=-10V
The ME4835 is the P-Channel logic enhancement mode power field
effect transistors are produced using high cell density , DMOS trench
technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits
where high-side switching and low in-line power loss are needed in a
very small outline surface mount package.
●
R
DS(ON)
≦
35m
Ω
@V
GS
=-4.5V
●
Super high density cell design for extremely low R
DS(ON)
●
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
●
Power Management in Note book
●
Portable Equipment
●
Battery Powered System
●
DC/DC Converter
●
Load Switch
●
DSC
●
LCD Display inverter
PIN CONFIGURATION
(SOP-8)
T
o
p View
Absolute Maximum Ratings
(T
A
=25
℃
Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Symbol
V
DSS
10 secs
Steady State
-30
Unit
V
Gate-Source Voltage
Continuous Drain
V
GSS
±20
V
T
A
=25
℃
T
A
=70
℃
-9.1
-7.3
-7
I
D
A
Current(Tj=150
℃
)
Pulsed Drain Current
-5.6
I
DM
EAS
I
S
-30
50
A
mJ
A
Avalanche Energy with Single Pulse(L=0.1mH)
Continuous Source Current (Diode Conduction)
-2.1
2.5
1.6
-1.25
1.5
T
A
=25
℃
Maximum Power Dissipation
T
A
=70
℃
P
D
W
0.9
Operating Junction
T
e
mperature
T
J
-55 to 150
℃
T≦10 sec
30
62
R
θ
JA
Thermal Resistance-Junction to Ambient
*
℃/W
℃/W
Steady State
Thermal Resistance-Junction to Case
R
θ
JC
38
*The device mounted on 1in
2
FR4 board with 2 oz copper
July,2008-Ver4.1
01
ME4
8
335
P-Channel 30-V (D-S) MOSFET
Electrical Characteristics
(T
A
=25
℃
Unless Otherwise Specified)
Symbol
STATIC
V
GS(th)
I
GSS
Parameter
Limit
Min
Typ
Max Unit
V
DS
=V
GS
, I
D
=-250
μ
A
V
DS
=0
V
, V
GS
=±20V
V
DS
=-30
V
, V
GS
=0V
V
DS
=-30
V
, V
GS
=0V
T
J
=55
℃
Gate Threshold Voltage
Gate Leakage Current
-1
-1.4
-3
±100
-1
V
nA
μ
A
I
DSS
Zero Gate Voltage Drain Current
-25
V
D
S
=-5
V
, V
GS
= –
10V
I
D(ON)
On-State Drain Current
a
-30
A
m
Ω
V
V
GS
=-10
V
, I
D
= -9.1A
15
20
R
DS(ON)
Drain-Source On-State Resistance
a
Diode Forward Voltage
V
GS
=-4.5
V
, I
D
= -6.9A
I
S
=-2.1A, V
GS
=0V
25
35
V
SD
-0.8
-1.2
DYNAMIC
Qg
T
o
tal Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
38
7.7
9
45
V
DS
=-15
V
, V
GS
=-10
V
,
I
D
=-9.1A
nC
Ω
Qgs
Qgd
Rg
V
GS
=0
V
, V
DS
=0
V
, f=1MH
Z
V
DS
=-15
V
, V
GS
=0
V
, f=1MHz
5.5
Ciss
Coss
Crss
t
d(on)
t
r
Input capacitance
1730 1900
pF
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-On Fall Time
240
70
41
19
50
23
V
DD
=-15
V
,
R
L
=15
Ω
I
D
=-1A, V
GEN
=-10V
R
G
=6
Ω
ns
105
17
120
20
t
d(off)
t
f
Notes: a. Pulse test; pulse width
≦
300us, duty cycle
≦
2%
July,2008-Ver4.1
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ME4
8
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P-Channel 30-V (D-S) MOSFET
Typical Characteristics (T
J
=25
℃
Noted)
Typical Characteristics (T
J
=25
℃
Noted)
July,2008-Ver4.1
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ME4
8
335
P-Channel 30-V (D-S) MOSFET
July,2008-Ver4.1
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ME4
8
335
P-Channel 30-V (D-S) MOSFET
SOP-8 Package Outline
MILLIMETERS (mm)
DIM
MIN
1.35
0.10
0.35
0.18
4.80
3.80
MAX
1.75
0.25
0.49
0.25
5.00
4.00
A
A1
B
C
D
E
e
1.27 BSC
H
5.80
0.40
0°
6.20
1.25
7
°
L
θ
Note: 1. Refer to JEDEC MS-012AA.
2. Dimension “D” does not include mold flash, protrusions
or gate burrs . Mold flash, protrusions or gate burrs shall not
exceed 0.15 mm per side.
July,2008-Ver4.1
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