MATSUKI-ME4953
| Part # | MATSUKI-ME4953 |
Download  | MATSUKI-ME4953 |
ME4953/ME4953-G
Dual P-Channel 30V (D-S) MOSFET
GENERAL DESCRIPTION
FEATURES
●
R
DS(ON)
≦
60m
Ω
@V
GS
=-10V
The ME4953 is the Dual P-Channel logic enhancement mode power
field effect transistors are produced using high cell density, DMOS
trench technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and low in-line power loss are needed
in a very small outline surface mount package.
●
R
DS(ON)
≦
90m
Ω
@V
GS
=-4.5V
●
Super high density cell design for extremely low R
DS(ON)
●
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
●
Power Management in Note book
●
Portable Equipment
●
Battery Powered System
●
DC/DC Converter
●
Load Switch
●
DSC
●
LCD Display inverter
PIN CONFIGURATION
(SOP-8)
T
o
p View
e
Ordering Information
: ME4953 (Pb-free)
ME4953-G (Green product-Halogen free)
Absolute Maximum Ratings
(T
A
=25
℃
Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Symbol
Limit
Unit
V
DSS
V
GSS
-30
±20
V
V
Gate-Source Voltage
Continuous Drain
T
A
=25
℃
T
A
=70
℃
-5.3
I
D
A
Current(Tj=150
℃
)
Pulsed Drain Current
-4.3
I
DM
I
S
-30
A
A
Continuous Source Current (Diode Conduction)
-1.7
T
A
=25
℃
Maximum Power Dissipation
T
A
=70
℃
2.0
P
D
W
1.3
Operating Junction
T
e
mperature
Storage
T
e
mperature Range
T
J
-55 to 150
-55 to 150
℃
℃
T
stg
T≦1
0
s
ec
47
75
R
θ
JA
R
θ
JC
Thermal Resistance-Junction to Ambient
*
℃
/
W
DCC
Steady State
Thermal Resistance-Junction to Case
45
℃
/
W
正式發行
*The device mounted on 1in
2
FR4 board with 2 oz copper
01
July, 2008-Ver4.0
ME4953/ME4953-G
Dual P-Channel 30V (D-S) MOSFET
Electrical Characteristics
(T
A
=25
℃
Unless Otherwise Specified)
Symbol
STATIC
V
GS(th)
I
GSS
Parameter
Limit
Min Typ
Max Unit
V
DS
=V
GS
, I
D
=-250
μ
A
Gate Threshold Voltage
Gate Leakage Current
-1
-1.4
-3
±100
-1
V
V
DS
=0
V
, V
GS
=±20V
V
DS
=-30
V
, V
GS
=0V
V
DS
=-30
V
, V
GS
=0V
T
J
=55
℃
nA
μ
A
I
DSS
Zero Gate Voltage Drain Current
-25
V
GS
=-10
V
,
I
D
= -5.3A
V
GS
=-4.5
V
, I
D
= -4.2A
I
S
=-1.7A, V
GS
=0V
50
69
60
90
m
Ω
R
DS(ON)
Drain-Source On-Resistance
Diode Forward Voltage
V
SD
-0.8
-1.2
V
DYNAMIC
Rg
Ω
Gate resistance
V
DS
=0
V
, V
GS
=0
V
, f=1MHz
3.5
450
70
20
14
4
Ciss
Coss
Crss
Qg
Input capacitance
490
17
Output Capacitance
Reverse Transfer Capacitance
T
o
tal Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
DS
=-15
V
, V
GS
=0
V
,
f
=1.0MHz
pF
V
DS
=-15
V
, V
GS
=-10
V
,
I
D
=-5.3A
Qgs
Qgd
t
d(on)
tr
nC
ns
3
27
11
40
4
33
15
52
6
V
DD
=-15
V
,
R
L
=15
ꢀ
I
D
=-1.0A, V
GEN
=-10V
R
G
=6
ꢀ
t
d(off)
t
f
Notes: a. Pulse test; pulse width
≦
300us, duty cycle
≦
2%
DCC
正式發行
02
July, 2008-Ver4.0
ME4953/ME4953-G
Dual P-Channel 30V (D-S) MOSFET
Typical Characteristics (T
J
=25
℃
Noted)
DCC
正式發行
03
July, 2008-Ver4.0
ME4953/ME4953-G
Dual P-Channel 30V (D-S) MOSFET
Typical Characteristics (T
J
=25
℃
Noted)
DCC
正式發行
04
July, 2008-Ver4.0
ME4953/ME4953-G
Dual P-Channel 30V (D-S) MOSFET
SOP-8 Package Outline
MILLIMETERS (mm)
DIM
MIN
1.35
0.10
0.35
0.18
4.80
3.80
MAX
1.75
0.25
0.49
0.25
5.00
4.00
A
A1
B
C
D
E
e
1.27 BSC
H
5.80
0.40
0°
6.20
1.25
7
°
L
θ
Note: 1. Refer to JEDEC MS-012AA.
2. Dimension “D” does not include mold flash, protrusions
or gate burrs . Mold flash, protrusions or gate burrs shall not
exceed 0.15 mm per side.
DCC
正式發行
05
July, 2008-Ver4.0
