MATSUKI-ME4970
| Part # | MATSUKI-ME4970 |
Download  | MATSUKI-ME4970 |
ME4970/ME4970-G
Dual N-Channel 30-V (D-S) MOSFET
GENERAL DESCRIPTION
FEATURES
●
R
DS(ON)
≦
16
mΩ@V
GS
=10V
The ME4970 is the Dual N-Channel logic enhancement mode power
field effect transistors are produced using high cell densit
y
,
D
MOS
trench technolog
y
.
T
his high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits
where high-side switching and low in-line power loss are needed in a
very small outline surface mount package.
●
R
DS(ON)
≦
20
mΩ@V
GS
=4.5V
●
Super high density cell design for extremely low R
DS(ON)
●
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
●
Power Management in Note book
●
Portable Equipment
●
Battery Powered System
●
DC/DC Converter
●
Load Switch
●
DSC
●
LCD Display inverter
PIN CONFIGURATION
(SOP-8)
T
o
p View
e
Ordering Information
: ME4970 (Pb-free)
ME4970-G(Green product-Halogen -free) product)
Absolute Maximum Ratings
(T
A
=25
℃
Unless Otherwise Noted)
Parameter
Symbol
V
DS
Unit
V
Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
30
±20
V
GS
V
T
A
=25
℃
T
A
=70
℃
10
Continuous Drain Current
Pulsed Drain Current
I
D
I
DM
A
A
8.3
38
T
A
=25
℃
T
A
=70
℃
2
Maximum Power Dissipation
Operating Junction
T
e
mperature
P
D
W
℃
1.2
T
J
-55 to 150
Limit
Parameter
Symbol
Unit
Typ
52
Max
62.5
110
40
t
≦
10 sec
Steady-State
R
θJA
R
θJ
F
Thermal Resistance-Junction to Ambient
*
DCC
℃
/W
93
Thermal Resistance-Junction to Foot (Drain)
Steady-State
*The device mounted on 1in
2
FR4 board with 2 oz copper
35
正式發行
01
Feb, 2012-Ver4.4
ME4970/ME4970-G
Dual N-Channel 30-V (D-S) MOSFET
Electrical Characteristics
(T
A
=25
℃
Unless Otherwise Specified)
Symbol
S
T
ATIC
Parameter
Limit
Min
Typ
Max Unit
V
GS
=0V, I
D
=250
μ
A
V
DS
=V
GS
, I
D
=250
μ
A
V
DS
=0V, V
GS
=±20V
V
DS
=24V, V
GS
=0V
V
GS
=10V, I
D
= 10A
V
GS
=4.5V, I
D
= 8A
I
S
=8.2A, V
GS
=0V
BV
DSS
V
GS(th)
I
GSS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
30
1
V
3
±100
1
V
Gate Leakage Current
nA
μ
A
I
DSS
Zero Gate Voltage Drain Current
13.2
16.8
0.8
16
Drain-Source On-Resistance
a
Diode Forward Voltage
m
Ω
R
DS(ON)
20
V
SD
DYNAMIC
Rg
1.2
V
Ω
Gate Resistance
f=1MHz
1
Qg
T
o
tal Gate Charge
9.5
3.6
3.4
841
250
71
Qgs
Qgd
C
iss
C
oss
C
rss
t
d(on)
tr
Post-Vth Gate-Source Charge
Gate-Drain Charge
V
DS
=10V, V
GS
=4.5V, I
D
=8.2A
nC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
T
u
rn-On Delay
T
i
me
T
u
rn-On Rise
T
i
me
T
u
rn-Off Delay
T
i
me
T
u
rn-Off Fall
T
i
me
V
DS
=25V, V
GS
=0
V
,
f
=1MHz
pF
ns
14
V
DD
=15V, R
L
=15
Ω
12
I
D
=1A, V
GEN
=10V,
t
d(off)
t
f
43
R
G
=6
Ω
4
Notes: a. pulse test: pulse width
≦
300us, duty cycle
≦
2%, Guaranteed by design, not subject to production testing.
b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice
DCC
正式發行
02
Feb, 2012-Ver4.4
ME4970/ME4970-G
Dual N-Channel 30-V (D-S) MOSFET
Typical Characteristics (T
J
=25
℃
Noted)
DCC
正式發行
03
Feb, 2012-Ver4.4
ME4970/ME4970-G
Dual N-Channel 30-V (D-S) MOSFET
Typical Characteristics (T
J
=25
℃
Noted)
DCC
正式發行
04
Feb, 2012-Ver4.4
ME4970/ME4970-G
Dual N-Channel 30-V (D-S) MOSFET
SOP-8 Package Outline
MILLIMETERS (mm)
Symbol
MIN
1.35
0.10
0.35
0.18
4.80
3.80
M
A
X
1.75
0.25
0.49
0.25
5.00
4.00
A
A1
B
C
D
E
e
1.27 BSC
H
L
5.80
0.40
0°
6.20
1.25
7°
θ
DCC
正式發行
05
Feb, 2012-Ver4.4
