MATSUKI-ME50N06A-G
| Part # | MATSUKI-ME50N06A-G |
Download  | MATSUKI-ME50N06A-G |
ME50N06A/ME50N06A-G
N- Channel 60V (D-S) MOSFET
GENERAL DESCRIPTION
FEATURES
●
R
DS(ON)
≦22
m
Ω
@V
GS
=10V
The ME50N06A is the N-Channel logic enhancement mode power
field effect transistors are produced using high cell density DMOS
trench technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as LCD inverter, computer power
management and DC to DC converter circuits which need low in-line
power loss.
●
Super high density cell design for extremely low R
DS(ON)
●
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
●
Power Management
●
DC/DC Converter
●
LCD TV & Monitor Display inverter
●
CCFL inverter
●
Secondary Synchronous Rectification
PIN CONFIGURATION
(TO-252-3L)
T
o
p View
e
Ordering Information
: ME50N06A (Pb-free)
ME50N06A-G (Green product-Halogen free)
Absolute Maximum Ratings
(T
C
=25
℃
Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Symbol
V
DSS
Steady
60
Unit
V
Gate-Source Voltage
V
GSS
±20
V
T
C
=25
℃
T
C
=70
℃
35.1
Continuous Drain Current
Pulsed Drain Current
I
D
A
A
28.1
I
DM
P
D
140
T
C
=25
℃
T
C
=70
℃
59.5
Maximum Power Dissipation
W
38.1
℃
Operating Junction
T
e
mperature
T
J
-55 to 150
2.1
℃
/W
Thermal Resistance-Junction to Case*
R
θ
JC
* Notes: The device mounted on 1in
2
FR4 board with 2 oz copper
01
Aug, 2011-Ver1.0
ME50N06A/ME50N06A-G
N- Channel 60V (D-S) MOSFET
Electrical Characteristics
(T
A
=25
℃
Unless Otherwise Specified)
Symbol Parameter
STATIC
Conditions
Min
Typ
Max
Unit
V
(BR)DSS
V
GS(th)
I
GSS
Drain-Source Breakdown Voltage
V
GS
=0
V
, I
D
=250
μ
A
V
DS
=V
GS
, I
D
=250
μ
A
V
DS
=0
V
, V
GS
=±20V
V
DS
=60
V
,
V
GS
=0V
60
2
V
V
Gate Threshold Voltage
4
±100
1
Gate Leakage Current
nA
μ
A
m
ꢀ
V
I
DSS
Zero Gate Voltage Drain Current
R
DS(ON)
V
SD
Drain-Source On-State Resistance
a
V
GS
=10V, I
D
= 50A
17
22
Diode Forward Voltage
I
S
=50A, V
GS
=0V
1.0
1.2
DYNAMIC
Qg
T
o
tal Gate Charge
T
o
tal Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
V
DD
=48
V
,
V
GS
=10V, I
D
=50A
V
DD
=48
V
,
V
GS
=4.5
V
, I
D
=50A
V
DS
=0
V
, V
GS
=0
V
, f=1MHz
V
DS
=15
V
,
V
GS
=0
V
, f=1MHz
37.1
10.9
14.3
8.3
Qg
nC
Qgs
Qgd
Rg
2.1
ꢀ
Ciss
Coss
Crss
t
d(on)
t
r
Input capacitance
2280
202
62
pF
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-On Fall Time
27.7
5.1
V
DS
=30
V
,
V
GS
=10V,
R
G
=3.6
ꢀ
, R
L
=30
ꢀ
ns
54.2
5.5
t
d(off)
t
f
Notes: a. Pulse test: pulse width
≦
300us, duty cycle
≦
2%, Guaranteed by design, not subject to production testing.
b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
02
Aug, 2011-Ver1.0
ME50N06A/ME50N06A-G
N- Channel 60V (D-S) MOSFET
Typical Characteristics (T
J
=25
℃
Noted)
03
Aug, 2011-Ver1.0
ME50N06A/ME50N06A-G
N- Channel 60V (D-S) MOSFET
Typical Characteristics (T
J
=25
℃
Noted)
04
Aug, 2011-Ver1.0
ME50N06A/ME50N06A-G
N- Channel 60V (D-S) MOSFET
TO-252-3L Package Outline
MILLIMETERS (mm)
SYMBOL
MIN
2.00
0.45
0.50
0.50
0.40
5.20
MAX
A
A1
B
2.50
0.60
0.88
1.14
0.60
6.23
B1
C
D
D2
H
2.743 REF
9.40
6.30
4.50
0.89
0.90
0.50
0
10.50
6.80
5.50
1.70
1.77
1.10
0.30
E
E2
L
L1
L2
L3
P
2.286 BSC
05
Aug, 2011-Ver1.0
