MATSUKI-ME50N06T
| Part # | MATSUKI-ME50N06T |
Download  | MATSUKI-ME50N06T |
ME50N06T/ME50N06T-G
N-Channel 60-V (D-S) MOSFET
GENERAL DESCRIPTION
FEATURES
●
R
DS(ON)
≦
22m
Ω
@V
GS
=10V
The ME50N06T is the N-Channel logic enhancement mode power
field effect transistors are produced using high cell density, DMOS
trench technology. This high density process is especially tailored to
minimize on-state resistance.
●
Super high density cell design for extremely low R
DS(ON)
●
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
●
Power Management
●
DC/DC Converter
●
Load Switch
PIN CONFIGURATION
(TO-220)
T
o
p View
e
Ordering Information
: ME50N06T (Pb-free)
ME50N06T-G (Green product-Halogen free)
Absolute Maximum Ratings
(T
C
=25
℃
Unless Otherwise Noted)
Parameter
Symbol
V
DSS
Limit
60
Unit
V
Drain-Source Voltage
Gate-Source Voltage
V
GSS
±20
V
T
c
=25
℃
T
C
=70
℃
53
Continuous Drain Current
Pulsed Drain Current
I
D
A
A
44
I
DM
P
D
212
T
C
=25
℃
T
C
=70
℃
136
Maximum Power Dissipation
W
℃
95
Operating Junction and Storage
T
e
mperature Range
T
J,
T
stg
-55 to 175
1.1
℃/W
DCC
R
θ
JC
Thermal Resistance-Junction to Case
*
* The device mounted on 1in
2
FR4 board with 2 oz copper.
正式發行
01
Ma
y
, 2012-Ver1.1
ME50N06T/ME50N06T-G
N-Channel 60-V (D-S) MOSFET
Electrical Characteristics
(T
A
=25
℃
Unless Otherwise Specified)
Symbol
STATIC
BV
DSS
V
GS(th)
I
GSS
Parameter
Limit
Min
Typ
Max
Unit
V
GS
=0
V
, I
D
=250
μ
A
V
DS
=V
GS
, I
D
=250
μ
A
V
DS
=0
V
, V
GS
=±20V
V
DS
=60
V
,
V
GS
=0V
V
GS
=10
V
, I
D
=50A
I
S
=50A, V
GS
=0V
Drain-Source Breakdown Voltage
Gate Threshold Voltage
60
V
V
2.0
4.0
±100
1
Gate-Body Leakage
nA
μ
A
m
Ω
V
I
DSS
Zero Gate Voltage Drain Current
Drain-Source On-Resistance*
Diode Forward Voltage *
R
DS(ON)
V
SD
17
22
1.0
1.2
DYNAMIC
Qg
T
o
tal Gate Charge
T
o
tal Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
V
DS
=48
V
,
V
GS
=10
V
, I
D
=50A
V
DS
=48
V
,
V
GS
=4.5
V
,
I
D
=50A
V
DS
=0
V
, V
GS
=0
V
, f=1MHz
V
DS
=15
V
,
V
GS
=0
V
, f=1MHz
38
11
15
8
Qg
nC
Qgs
Qgd
Ω
Rg
2
C
iss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
2270
197
62
29
5
C
oss
C
rss
pF
t
d(on)
t
r
V
DD
=30
V
,
R
L
=30
Ω
,
V
GS
=10
V
,
R
G
=3.6
Ω
ns
53
6
t
d(off)
T
f
Notes: a. pulse test: pulse width
≦
300us, duty cycle
≦
2%, Guaranteed by design, not subject to production testing.
b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
DCC
正式發行
02
Ma
y
, 2012-Ver1.1
ME50N06T/ME50N06T-G
N-Channel 60-V (D-S) MOSFET
Typical Characteristics (T
J
=25
℃
Noted)
DCC
正式發行
03
Ma
y
, 2012-Ver1.1
ME50N06T/ME50N06T-G
N-Channel 60-V (D-S) MOSFET
Typical Characteristics (T
J
=25
℃
Noted)
DCC
正式發行
04
Ma
y
, 2012-Ver1.1
ME50N06T/ME50N06T-G
N-Channel 60-V (D-S) MOSFET
TO-220 Package Outline
DCC
正式發行
05
Ma
y
, 2012-Ver1.1
