MATSUKI-ME60N03

ME60N03/ME60N03-G  

30V N-Channel Enhancement Mode MOSFET  

GENERAL DESCRIPTION  

FEATURES  

●

R

DS(ON)

≦

8.5

mΩ@V

GS

=10V  

The ME60N03 is the N-Channel logic enhancement mode power  

field effect transistors are produced using high cell density DMOS  

trench technolog

y

.

T

his high density process is especially tailored to  

minimize on-state resistance. These devices are particularly suited  

for low voltage application such as LCD inverter, computer power  

management and DC to DC converter circuits which need low in-line  

power loss.  

●

R

DS(ON)

≦

13

mΩ@V

GS

=4.5V  

●

Super high density cell design for extremely low R

DS(ON)  

●

Exceptional on-resistance and maximum DC current  

capability  

APPLICATIONS  

●

Power Management  

●

DC/DC Converter  

●

LCD TV & Monitor Display inverter  

●

CCFL inverter  

●

Secondary Synchronous Rectification  

PIN CONFIGURATION  

(TO-252-3L)  

T

o

p View  

e

Ordering Information

: ME60N03 (Pb-free)  

ME60N03-G (Green product-Halogen free)  

Absolute Maximum Ratings

(T

A

=25

℃

Unless Otherwise Noted)  

Parameter  

Symbol  

V

DSS  

Limit  

30  

Unit  

V

Drain-Source Voltage  

Gate-Source Voltage  

V

GSS  

±20  

V

T

C

=25

℃

 

T

C

=70

℃  

48.5  

A

Continuous Drain Current  

Pulsed Drain Current  

I

D  

I

DM  

P

D  

60.6  

50  

A

T

C

=25

℃  

T

C

=70

℃  

Maximum Power Dissipation  

W

℃

32  

Operating Junction and Storage

T

e

mperature Range  

Thermal Resistance-Junction to Case  

T

J,

T

stg  

-55 to 150  

2.5  

DCC  

℃

/W  

R

θJ

C  

正式發行  

*The device mounted on 1in

2

FR4 board with 2 oz copper  

Jan.2016-Ver 4.4  

01  

ME60N03/ME60N03-G  

30V N-Channel Enhancement Mode MOSFET  

Electrical Characteristics

(T

A

=25

℃

Unless Otherwise Specified)  

Symbol  

S

T

ATIC  

BV

DSS  

V

GS(th)  

I

GSS  

Parameter  

Limit  

Min Typ  

Max  

Unit  

V

GS

=0V, I

D

=250

μ

A  

V

DS

=V

GS

, I

D

=250

μ

A  

V

DS

=0V, V

GS

=±20V  

V

DS

=24V, V

GS

=0V  

V

GS

=10V, I

D

=30A  

V

GS

=4.5V, I

D

=20A  

I

S

=20A, V

GS

=0V  

Drain-Source Breakdown Voltage  

Gate Threshold Voltage  

30  

V

V

1

1.6  

3

±100  

1

Gate-Body Leakage  

nA  

μ

A  

I

DSS  

Zero Gate Voltage Drain Current  

6.5  

10  

8.5  

13  

m

Ω  

R

DS(ON)  

Drain-Source On-Resistance  

Diode Forward Voltage  

V

SD  

0.87  

1.5  

V

DYNAMIC  

Qg  

T

o

tal Gate Charge  

22  

4.5  

4

Qgs  

Qgd  

C

iss  

C

oss  

C

rss  

t

d(on)  

t

r  

Gate-Source Charge  

Gate-Drain Charge  

Input Capacitance  

V

DS

=15V, V

GS

=10V, I

D

=35A  

V

DS

=15V, V

GS

=0

V

,

f=1MHz  

nC  

pF  

1219  

182  

88  

Output Capacitance  

Reverse Transfer Capacitance  

T

u

rn-On Delay

T

i

me  

T

u

rn-On Rise

T

i

me  

T

u

rn-Off Delay

T

i

me  

T

u

rn-Off Fall

T

i

me  

13  

V

DS

=15V,V

GS

=10V  

10  

R

G

=24

Ω

,R

L

=15

Ω

,  

ns  

46  

t

d(off)  

t

f  

I

D

=1A  

7

Note: a.Pulse test: pulse width

＜

=300us, duty cycle

＜

=2

％  

b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.  

DCC  

正式發行  

Jan.2016-Ver 4.4  

02  

ME60N03/ME60N03-G  

30V N-Channel Enhancement Mode MOSFET  

Typical Characteristics (T

J

=25

℃

Noted)  

DCC  

正式發行  

Jan.2016-Ver 4.4  

03  

ME60N03/ME60N03-G  

30V N-Channel Enhancement Mode MOSFET  

Typical Characteristics (T

J

=25

℃

Noted)  

DCC  

正式發行  

Jan.2016-Ver 4.4  

04  

ME60N03/ME60N03-G  

30V N-Channel Enhancement Mode MOSFET  

TO-252-3L Package Outline  

MAX  

2.50  

0.90  

0.90  

6.30  

2.90  

6.75  

5.50  

1.80  

1.10  

SYMBOL  

MIN  

2.10  

0.40  

0.40  

A

B

C

5.30  

2.20  

6.30  

4.80  

0.90  

0.50  

0.00  

8.90  

D

D1  

E

E1  

L1  

L2  

L3  

H

0.20  

10.40  

P

2.30 BSC  

DCC  

正式發行  

Jan.2016-Ver 4.4  

05