MATSUKI-ME66N04T
| Part # | MATSUKI-ME66N04T |
Download  | MATSUKI-ME66N04T |
ME66N04T
N- Channel 40-V (D-S) MOSFET
GENERAL DESCRIPTION
FEATURES
●
R
DS(ON)
=10.5m
The ME66N04T is the N-Channel logic enhancement mode power
field effect transistors are produced using high cell density DMOS
trench technology. This high density process is especially tailored to
minimize on-state resistance.
Ω
@V
GS
=10V
Ω
@V
GS
=4.5V
●
R
DS(ON)
=13.5m
●
Super high density cell design for extremely low R
DS(ON)
●
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
●
Power Management
●
DC/DC Converter
●
Load Switch
PIN CONFIGURATION
(TO-220FB-3L)
T
o
p View
Absolute Maximum Ratings
(T
A
=25
℃
Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Symbol
V
DSS
Steady
40
Unit
V
Gate-Source Voltage
V
GSS
±25
55
V
T
C
=25
℃
Continuous Drain Current
Pulsed Drain Current
I
D
A
A
℃
T
C
=100
38
*
I
DM
P
D
220
100
50
T
C
=25
℃
Maximum Power Dissipation
W
℃
T
C
=100
℃
Operating Junction
T
e
mperature
T
J
-55 to 175
1.5
℃/W
Thermal Resistance-Junction to Case**
R
θ
JC
* Drain
current is limited by junction temperature
** The device mounted on 1i
n
2
FR4 board with 2 oz copper.
01
Ma
y
, 2014-Ver1.0
ME66N04T
N- Channel 40-V (D-S) MOSFET
Electrical Characteristics
(T
A
=25
℃
Unless Otherwise Specified)
Symbol Parameter
Conditions
Min
Typ
Max
Unit
STATIC
V
GS
=0
V
, I
DS
=250
μ
A
V
V
BV
DSS
V
GS(th)
I
GSS
Drain-Source Breakdown Voltage
40
1
μ
A
V
DS
=V
GS
, I
DS
=250
1.6
Gate Threshold Voltage
Gate-Body Leakage
3
±100
1
V
DS
=0
V
, V
GS
=±25V
V
DS
=60
V
,
V
GS
=0V
nA
μ
A
I
DSS
Zero Gate Voltage Drain Current
V
GS
=10V, I
DS
= 28A
V
GS
=4.5
V
, I
DS
= 28A
I
SD
10.5
13.5
0.8
13.5
15
m
Ω
R
DS(ON)
Drain-Source On-Resistance*
Diode Forward Voltage *
V
SD
1.1
V
=28A, V
GS
=0V
DYNAMIC
Qg
T
o
tal Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
62
6
nC
V
DS
=48
V
,
V
GS
=10
V
, I
Qgs
Qgd
Rg
D
S
=28A
11
1.2
3522
666
172
21
Ω
V
DS
=0
V
, V
GS
=0
V
, f=1MHz
Ciss
Coss
Crss
t
d(on)
t
r
Input capacitance
V
DS
=25
V
,
V
GS
=0
V
, f=1.0MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-On Fall Time
39
48
25
I
DS
=28A
V
DD
=30
V
,
ns
V
GS
=10
V
, R
G
=4
Ω
52
58
27
t
d(off)
t
f
31
Notes: a. Pulse test: pulse width
≦
300us, duty cycle
≦
2%, Guaranteed by design, not subject to production testing.
b. Matsuki reserves the right to improve product design, functions and reliability without notice.
02
Ma
y
, 2014-Ver1.0
ME66N04T
N- Channel 40-V (D-S) MOSFET
Typical Characteristics (T
J
=25
℃
Noted)
On Resistance
vs.Junction Temperature
On Resistance
Drain Current
vs.
2.2
17
16
15
14
13
12
11
10
9
V
GS
= 10V
I
DS
= 28A
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
V
GS
=4.5V
V
GS
=10V
R
ON
@
T
=
j
2
5
o
C:10.5m
W
-50 -25
0
25 50 75
100 125 150 175
0
10
20
30
40
50
I
D
–
D
rain Current (A)
T
j
– Junction
T
emperature (°C)
On Resistance
Gate-Source Voltage
vs.
Capacitance
20
18
16
14
12
10
8
5000
4500
4000
3500
3000
2500
I
DS
=28A
Frequency=1MHz
Ciss
2000
1500
Coss
1000
500
Crss
6
0
0
4
5
6
7
8
9
10
5
10 15 20 25 30 35 40
V
GS
– Gate – Source Voltage (V)
V
DS
– Drain – Source Voltage (V)
On-Region Characteristics
Threshold Voltage
160
140
120
100
80
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
V
GS
= 7,8,9,10V
I
DS
=250
m
A
6V
5.5V
5V
60
40
20
4.5V
4V
0
0
1
2
3
4
5
-50 -25
0
25 50 75
100 125 150 175
V
DS
– Drain-Source Voltage (V)
T
j
– Junction
T
emperature (°C)
03
Ma
y
, 2014-Ver1.0
ME66N04T
N- Channel 40-V (D-S) MOSFET
Typical Characteristics (T
J
=25
℃
Noted)
Gate Charge
Body-diode characteristics
160
100
10
V
DS
= 48V
9
I
DS
= 28A
8
7
6
5
4
3
2
1
0
T
j
=175
o
C
10
1
T
j
=25
o
C
0.1
0.0
0
10
20
30
40
50
60
70
0.3
0.6
0.9
1.2
1.5
Q
G
–
G
ate Charge (nC)
V
SD
– Source-Drain Voltage (V)
Maximum Forward Biased Safe Operation Area
400
100
100us
Rds(on) Limit
1ms
10
1
10ms
DC
T
C
=25
o
C
0.1
400
0.1
1
10
100
V
DS
– Drain – Source Voltage (V)
Normalized
Junction-to-Ambient
Thermal Transient Impedance,
10
1
Duty =
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Mounted on minimum pad
o
R
q
JA
: 62.5 C/W
Single
0.001
0.1
0.0001
0.001
0.01
1
10
Square Wave Pulse Duration (sec)
04
Ma
y
, 2014-Ver1.0
