MATSUKI-ME7114S-G
| Part # | MATSUKI-ME7114S-G |
Download  | MATSUKI-ME7114S-G |
ME7114S-G
N-Channel 30V(D-S) Enhancement MOSFET
GENERAL DESCRIPTION
FE
A
T
URES
●
R
DS(ON)
≦
7
mΩ@V
GS
=10V
The ME7114S-G is the N-Channel logic enhancement mode power
field effect transistors are produced using high cell density , DMOS
trench technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits
where Low-side switching , and low in-line power loss are needed in
a very small outline surface mount package.
●
R
DS(ON)
≦
10.5
mΩ@V
GS
=4.5V
●
Super high density cell design for extremely low R
DS(ON)
●
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
●
Portable Equipment
●
Battery Powered System
●
DC/DC Converter
●
Load Switch
PIN CONFIGUR
A
T
ION
DFN(S) 3×3)
T
o
p View
e
Ordering Information
: ME7114S-G (Green product-Halogen free)
Absolute Maximum Ratings
(T
A
=25
℃
Unless Otherwise Noted)
Parameter
Symbol
V
DS
Unit
V
Maximum Ratings
Drain-Source Voltage
30
±20
71
Gate-Source Voltage
V
GS
V
T
C
=25
℃
T
C
=70
℃
T
A
=25
℃
T
A
=70
℃
57
Continuous Drain
I
D
A
A
Current(Tj=150
℃
)
*
18.4
14.7
74
Pulsed Drain Current
I
DM
P
D
T
C
=25
℃
T
C
=70
℃
T
A
=25
℃
T
A
=70
℃
52
33
Maximum Power Dissipation
*
W
℃
3.8
2.4
Operating Junction
T
e
mperature
T
J
-55 to 150
Thermal Resistance-Junction to Ambient
*
Thermal Resistance-Junction to Case
*
R
θJA
R
θJ
C
Typ
Typ
26
Max
Max
33
DCC
正式發行
℃
/W
1.9
2.4
*The device mounted on 1in
2
FR4 board with 2 oz copper
01
Mar, 2020-Ver2.1
ME7114S-G
N-Channel 30V(D-S) Enhancement MOSFET
Electrical Characteristics
(T
A
=25
℃
Unless Otherwise Specified)
Symbol
STATIC
V
(BR)DSS
V
GS(th)
I
GSS
Parameter
Limit
Min
Typ
Max Unit
V
GS
=0
V
,
I
D
=250
μ
A
V
DS
=V
GS
, I
D
=250
μ
A
V
DS
=0
V
,
V
GS
=±20V
V
DS
=30
V
,
V
GS
=0V
V
GS
=10
V
,
I
D
=13A
V
GS
=4.5
V
,
I
D
=10A
I
S
=2.8A, V
GS
=0V
Drain-Source Breakdown Voltage
Gate Threshold Voltage
30
V
1.0
3.0
±100
1
V
Gate Leakage Current
nA
μ
A
I
DSS
Zero Gate Voltage Drain Current
5.8
8.5
7
Drain-Source On-State Resistance
a
Diode Forward Voltage
m
Ω
R
DS(ON)
10.5
1.1
V
SD
0.75
V
DYNAMIC
Qg
T
o
tal Gate Charge
T
o
tal Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
V
DS
=15
V
,
V
GS
=10V, I
D
=13A
V
DS
=15
V
,
V
GS
=4.5
V
,
I
D
=13A
37
18
Qg
nC
Qgs
Qgd
C
iss
C
oss
C
rss
Rg
7.7
8.8
1690
260
84
V
DS
=15
V
,
V
GS
=0
V
,
F=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate-Resistance
pF
Ω
V
DS
=0
V
,
V
GS
=0
V
,
F
=1MHz
0.9
20
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
t
d(on)
t
r
V
DS
=15
V
,
R
L
=15
Ω
I
D
=1A, V
GEN
=10V
R
G
=6
Ω
16
ns
63
t
d(off)
t
f
11
Note: a. Pulse test: pulse width
≦
300us, duty cycle
≦
2
％
b
.
Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
DCC
正式發行
02
Mar, 2020-Ver2.1
ME7114S-G
N-Channel 30V(D-S) Enhancement MOSFET
Typical Characteristics (T
J
=25
℃
Noted)
DCC
正式發行
03
Mar, 2020-Ver2.1
ME7114S-G
N-Channel 30V(D-S) Enhancement MOSFET
Typical Characteristics (T
J
=25
℃
Noted)
DCC
正式發行
04
Mar, 2020-Ver2.1
ME7114S-G
N-Channel 30V(D-S) Enhancement MOSFET
DFN(S) 3×3 Package Outline
DCC
正式發行
05
Mar, 2020-Ver2.1
