MATSUKI-ME75N03
| Part # | MATSUKI-ME75N03 |
Download  | MATSUKI-ME75N03 |
ME75N03/ME75N03-G
30V N-Channel Enhancement Mode MOSFET
GENERAL DESCRIPTION
FEATURES
●
R
DS(ON)
≦
5.2m
Ω
@VGS=10V
The ME75N03 is the N-Channel logic enhancement mode power
field effect transistors are produced using high cell density, DMOS
trench technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits
where high-side switching, and low in-line power loss are needed in a
very small outline surface mount package.
●
R
DS(ON)
≦
8m
Ω
@VGS=4.5V
●
Super high density cell design for extremely low R
DS(ON)
●
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
●
Power Management in Note book
●
DC/DC Converter
●
Load Switch
●
LCD Display inverter
PIN CONFIGURATION
(TO-252-3L)
T
o
p View
e
Ordering Information
: ME75N03(Pb-free)
ME75N03-G (Green product-Halogen free)
Absolute Maximum Ratings
(T
C
=25
℃
Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Symbol
V
DS
Unit
V
Maximum Ratings
30
Gate-Source Voltage
V
GS
±20
V
T
C
=25
℃
T
C
=70
℃
71
Continuous Drain Current
Pulsed Drain Current
I
D
A
A
57
I
DM
P
D
284
T
C
=25
℃
T
C
=70
℃
42
Maximum Power Dissipation
Operating Junction
T
e
mperature
W
27
-55 to 150
3
℃
T
J
℃/W
R
θ
JC
Thermal Resistance-Junction to Case
*
* The device mounted on 1in
2
FR4 board with 2 oz copper
DCC
正式發行
01
Mar, 2012 – Version 2.1
ME75N03/ME75N03-G
30V N-Channel Enhancement Mode MOSFET
Electrical Characteristics
(T
C
=25
℃
Unless Otherwise Specified)
Symbol
STATIC
BV
DSS
V
GS(th)
I
GSS
Parameter
Limit
Min
Typ
Max
Unit
V
GS
=0
V
, I
D
=250
μ
A
V
DS
=V
GS
, I
D
=250
μ
A
V
GS
=±20V
Drain-Source Breakdown Voltage
Gate Threshold Voltage
30
1
V
V
3
±100
1
Gate-Body Leakage
nA
μ
A
I
DSS
Zero Gate Voltage Drain Current
V
DS
=30
V
,
V
GS
=0V
V
GS
=10
V
, I
D
=20A
V
GS
=4.5
V
,
I
D
=20A
I
SD
=25A, V
GS
=0V
4.3
5.2
8
m
Ω
R
DS(ON)
Drain-Source On-Resistance*
Diode Forward Voltage *
6
V
SD
0.8
1.2
V
DYNAMIC
Qg
T
o
tal Gate Charge
T
o
tal Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
V
DD
=15
V
,
V
GS
=10
V
, I
D
=20A
V
DD
=15
V
,
V
GS
=4.5
V
, I
D
=20A
V
DS
=0
V
, V
GS
=0
V
, f=1MHz
56
28
Qg
nC
Qgs
Qgd
Rg
9
13
Ω
1.7
2580
393
128
23
C
iss
C
oss
C
rss
t
d(on)
t
r
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
DS
=15
V
,
V
GS
=0
V
,
f=1MHz
pF
V
DD
=15
V
,
R
L
=15
Ω
I
D
=1A, V
GEN
=10V
R
G
=3
Ω
17
ns
76
t
d(off)
t
f
12
Notes: a, pulse test: pulse width
≦
300us, duty cycle
≦
2%,Guaranteed by design, not subject to production testing.
b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
DCC
正式發行
02
Mar, 2012 – Version 2.1
ME75N03/ME75N03-G
30V N-Channel Enhancement Mode MOSFET
Typical Characteristics (T
J
=25
℃
Noted)
DCC
正式發行
03
Mar, 2012 – Version 2.1
ME75N03/ME75N03-G
30V N-Channel Enhancement Mode MOSFET
Typical Characteristics (T
J
=25
℃
Noted)
DCC
正式發行
04
Mar, 2012 – Version 2.1
ME75N03/ME75N03-G
30V N-Channel Enhancement Mode MOSFET
TO-252-3L Package Outline
MAX
2.50
0.90
0.90
SYMBOL
MIN
2.10
0.40
0.40
A
B
C
D
D1
E
5.30
2.20
6.30
4.80
0.90
0.50
0.00
8.90
6.30
2.90
6.75
5.50
1.80
1.10
0.20
10.40
E1
L1
L2
L3
H
P
2.30 BSC
DCC
正式發行
05
Mar, 2012 – Version 2.1
