MATSUKI-ME7804S-G
| Part # | MATSUKI-ME7804S-G |
Download  | MATSUKI-ME7804S-G |
ME7804S-G
N-Channel 30V (D-S) MOSFE
T
,
E
SD Protected
GENERAL DESCRIPTION
FEATURES
●
R
DS(ON)
≦
16m
Ω
@V
GS
=10V
The ME7804-G N-Channel logic enhancement mode power field
effect transistors are produced using high cell density, DMOS trench
technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits
where high-side switching , and low in-line power loss are needed in
a very small outline surface mount package.
●
R
DS(ON)
≦
25m
Ω
@
V
GS
=4.5V
APPLICATIONS
●
Power Management in Note book
●
Portable Equipment
●
Battery Powered System
●
Load Switch
●
DSC
●
ESD Protected
PIN CONFIGURATION
(DFN 3.3×3.3)
T
o
p View
e
Ordering Information
: ME7804S-G (Green product-Halogen free)
Absolute Maximum Ratings
(T
j
=25
℃
Unless Otherwise Noted)
Parameter
Symbol
V
DS
Unit
V
Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
30
±20
V
GS
V
T
A
=25
℃
T
A
=70
℃
12.2
9.7
Continuous Drain Current
Pulsed Drain Current
I
D
A
A
I
DM
P
D
50
T
A
=25
℃
T
A
=70
℃
3.8
Maximum Power Dissipation
W
2.4
℃
℃
Operating Junction
T
e
mperature
Storage
T
e
mperature Range
T
J
150
T
STG
-55 to 150
℃/W
Thermal Resistance-Junction to Ambient*
R
θ
JA
33
DCC
*The device mounted on 1in
2
FR4 board with 2 oz copper
正式發行
01
Dec, 2011-Ver2.1
ME7804S-G
N-Channel 30V (D-S) MOSFE
T
,
E
SD Protected
Electrical Characteristics
(T
A
=25
℃
Unless Otherwise Specified)
Symbol
STATIC
BV
DSS
V
GS(th)
I
GSS
Parameter
Limit
Min
Typ
Max Unit
V
GS
=0
V
, I
D
=250
μ
A
V
DS
=V
GS
, I
D
=250
μ
A
V
DS
=0
V
, V
GS
=±16V
V
DS
=30
V
,
V
GS
=0V
V
GS
=10
V
, I
D
= 10A
V
GS
=4.5
V
,
I
D
= 5A
I
S
=9A, V
GS
=0V
Drain-Source Breakdown Voltage
Gate Threshold Voltage
30
1
V
3
±10
1
V
μ
A
μ
A
Gate Leakage Current
I
DSS
Zero Gate Voltage Drain Current
13
19
16
25
Drain-Source On-State Resistance
a
Diode Forward Voltage
m
Ω
R
DS(ON)
V
SD
0.8
V
DYNAMIC
Qg
T
o
tal Gate Charge
T
o
tal Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
=15
V
,
V
GS
=10
V
, I
D
=10A
V
DS
=15
V
,
V
GS
=4.5
V
,
I
D
=10A
18
8.8
4.2
3.7
729
94
Qg
nC
Qgs
Qgd
C
iss
C
oss
C
rss
Rg
V
DS
=15
V
,
V
GS
=0
V
,f=1MHz
V
DS
=0
V
, V
GS
=0
V
,f=1MHz
pF
29
Ω
0.9
14
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
t
d(on)
t
r
9.5
44
V
DS
=25
V
,
R
L
=25
Ω
R
GEN
=6
Ω
, V
GS
=10V
ns
t
d(off)
t
f
5.7
Notes: a. Pulse test: pulse width
≦
300us, duty cycle
≦
2%,Guaranteed by design, not subject to production testing.
b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
DCC
正式發行
02
Dec, 2011-Ver2.1
ME7804S-G
N-Channel 30V (D-S) MOSFE
T
,
E
SD Protected
Typical Characteristics (T
J
=25
℃
Noted)
DCC
正式發行
03
Dec, 2011-Ver2.1
ME7804S-G
N-Channel 30V (D-S) MOSFE
T
,
E
SD Protected
Typical Characteristics (T
J
=25
℃
Noted)
DCC
正式發行
04
Dec, 2011-Ver2.1
ME7804S-G
N-Channel 30V (D-S) MOSFE
T
,
E
SD Protected
DFN(S) 3.3×3.3 Package Outline
DCC
正式發行
05
Dec, 2011-Ver2.1
