MATSUKI-ME80N75F
| Part # | MATSUKI-ME80N75F |
Download  | MATSUKI-ME80N75F |
ME80N75F / ME80N75F-G
N- Channel 75-V (D-S) MOSFET
GENERAL DESCRIPTION
FE
A
T
URES
●
R
DS(ON)
≦
10
mΩ@V
GS
=10V
The ME80N75F is the N-Channel logic enhancement mode power
field effect transistors are produced using high cell density, DMOS
trench technology. This high density process is especially tailored to
minimize on-state resistance.
●
Super high density cell design for extremely low R
DS(ON)
●
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
●
Power Management
●
DC/DC Converter
●
Load Switch
PIN CONFIGUR
A
T
ION
(TO-220F)
T
o
p View
e
Ordering Information
: ME80N75F (Pb-free)
ME80N75F-G (Green product-Halogen free)
Absolute Maximum Ratings
(T
C
=25
℃
Unless Otherwise Noted)
Parameter
Symbol
V
DS
Unit
V
Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
75
±25
V
GS
V
T
C
=25
℃
T
C
=70
℃
55.7
46.6
223
Continuous Drain Current
I
D
I
DM
I
as
A
A
A
Pulsed Drain Current
T
C
=25
℃
T
C
=70
℃
T
C
=25
℃
T
C
=70
℃
T
C
=25
℃
T
C
=70
℃
40
Single pulse Avalanche Current L=0.3mH
33.5
240
Single pulse Avalanche Energy L=0.3mH
Maximum Power Dissipation
Eas
Mj
W
168
61.9
43.4
-55 to 175
2.42
P
D
℃
Junction and Storage
T
e
mperature Range
Thermal Resistance-Junction to Case*
T
J
℃
/W
R
θJ
C
* The device mounted on 1in
2
FR4 board with 2 oz copper.
DCC
正式發行
01
Jul, 2017-Ver1.5
ME80N75F / ME80N75F-G
N- Channel 75-V (D-S) MOSFET
Electrical Characteristics
(T
C
=25
℃
Unless Otherwise Specified)
Symbol
STATIC
BV
DSS
V
GS(th)
I
GSS
Parameter
Limit
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V
GS
=0
V
,
I
D
=250
μ
A
V
DS
=V
GS
, I
D
=250
μ
A
V
DS
=0
V
,
V
GS
=±25V
V
DS
=75
V
,
V
GS
=0V
V
GS
=10
V
,
I
D
=40A
I
S
=40A, V
GS
=0V
75
V
V
2.0
4.0
±100
1
Gate-Body Leakage
nA
μ
A
m
Ω
V
I
DSS
Zero Gate Voltage Drain Current
Drain-Source On-Resistance*
Diode Forward Voltage *
R
DS(ON)
V
SD
8
10
0.9
1.2
DYNAMIC
Qg
T
o
tal Gate Charge
T
o
tal Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
V
DD
=60
V
,
V
GS
=10
V
,
I
D
=75A
V
DD
=60
V
,
V
GS
=4.5
V
,
I
D
=75A
V
DS
=0
V
,
V
GS
=0
V
,
f
=1MHz
V
DS
=20
V
,
V
GS
=0
V
,
f
=1MHz
137
27.9
36.2
52.1
1
Qg
nC
Qgs
Qgd
Ω
Rg
C
iss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
6160
435
146
63.6
40.8
167
47.7
C
oss
C
rss
pF
t
d(on)
t
r
V
GS
=10
V
,
R
L
=15
Ω
V
DD
=30
V
,
R
G
=10
Ω
ns
t
d(off)
t
f
Notes: a. pulse test: pulse width
≦
300us, duty cycle
≦
2%, Guaranteed by design, not subject to production testing.
b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
DCC
正式發行
02
Jul, 2017-Ver1.5
ME80N75F / ME80N75F-G
N- Channel 75-V (D-S) MOSFET
Typical Characteristics (T
J
=25
℃
Noted)
DCC
正式發行
03
Jul, 2017-Ver1.5
ME80N75F / ME80N75F-G
N- Channel 75-V (D-S) MOSFET
Typical Characteristics (T
J
=25
℃
Noted)
DCC
正式發行
04
Jul, 2017-Ver1.5
ME80N75F / ME80N75F-G
N- Channel 75-V (D-S) MOSFET
TO-220F Package Outline
MILLIMETERS(mm)
Symbol
MIN
4.40
0.60
0.30
15.40
6.96
2.30
MAX
5.00
1.00
A
b
C
D
E
0.70
16.40
10.46
2.80
F
e
2.54 TYP
H1
J1
L
ØQ
Q1
6.40
2.45
12.28
2.92
3.05
7.00
3.05
13.68
3.38
3.55
DCC
正式發行
05
Jul, 2017-Ver1.5
