MATSUKI-ME85P03
| Part # | MATSUKI-ME85P03 |
Download  | MATSUKI-ME85P03 |
ME85P03/ ME85P03-G
P- Channel 30V (D-S) MOSFET
GENERAL DESCRIPTION
FEATURES
●
R
DS(ON)
≦
8
mΩ@V
GS
=-10V
The ME85P03 is the P-Channel logic enhancement mode power field
effect transistors are produced using high cell density, DMOS trench
technolog
y
.
T
his high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits
where switching, and low in-line power loss are needed in a very
small outline surface mount package.
●
R
DS(ON)
≦
11
mΩ@V
GS
=-4.5V
●
Super high density cell design for extremely low R
DS(ON)
●
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
●
Power Management in Note book
●
DC/DC Converter
●
Load Switch
●
LCD Display inverter
PIN CONFIGURATION
(TO-252)
T
o
p View
e
Ordering Information
: ME85P03 (Pb-free)
ME85P03-G (Green product-Halogen free)
Absolute Maximum Ratings
(T
A
=25
℃
Unless Otherwise Noted)
Parameter
Symbol
V
DS
Unit
V
Maximum Ratings
Drain-Source Voltage
-30
±20
Gate-Source Voltage
V
GS
V
T
C
=25
℃
T
C
=70
℃
-80
Continuous Drain Current*
I
D
A
A
-65
Pulsed Drain Current (Package limited)
I
DM
P
D
-200
83
T
C
=25
℃
T
C
=70
℃
Maximum Power Dissipation*
W
℃
53
Operating Junction
T
e
mperature
T
J
-55 to 150
1.5
Thermal Resistance-Junction to Case*
R
θJ
C
*The device mounted on 1in
2
FR4 board with 2 oz copper
DCC
正式發行
Dec, 2015-Ver1.2
01
ME85P03/ ME85P03-G
P- Channel 30V (D-S) MOSFET
Electrical Characteristics
(T
A
=25
℃
Unless Otherwise Specified)
Symbol Parameter
S
T
ATIC
Limit
Min
Typ
Max
Unit
V
GS
=0V, I
D
=-250
μ
A
V
(BR)DSS
-30
-1
V
V
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=-250
μ
A
V
DS
=0V, V
GS
=±20V
V
DS
=-30V, V
GS
=0V
V
GS
=-10V, I
D
= -20A
V
GS
=-4.5V, I
D
= -20A
I
S
=-1A, V
GS
=0V
V
GS(th)
I
GSS
-3
±100
-1
Gate Leakage Current
nA
μ
A
I
DSS
Zero Gate Voltage Drain Current
6.7
8.4
8
R
DS(ON)
Drain-Source On-State Resistance
a
Diode Forward Voltage
m
Ω
11
V
SD
-0.7
-1.2
V
DYNAMIC
Qg
T
o
tal Gate Charge
T
o
tal Gate Charge
V
DS
=-15V, V
GS
=-10V, I
D
=-20A
V
DS
=-15V, V
GS
=-4.5V, I
D
=-20A
88
44
Qg
nC
Qgs
Gate-Source Charge
12.5
Qgd
Ciss
Coss
Crss
t
d(on)
t
r
Gate-Drain Charge
Input capacitance
19.5
3887
432
372
48
Output Capacitance
Reverse Transfer Capacitance
T
u
rn-On Delay
T
i
me
T
u
rn-On Rise
T
i
me
T
u
rn-Off Delay
T
i
me
T
u
rn-Off Fall
T
i
me
V
DS
=-15V, V
GS
=0V, F=1MHz
pF
ns
V
DS
=-15V, R
L
=15
Ω
V
GS
=-10V, R
G
=6
Ω
I
D
=-1A
20
170
54
t
d(off)
t
f
Notes: a. Pulse test: pulse width
≦
300us, duty cycle
≦
2%,Guaranteed by design, not subject to production testing.
b.
Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
DCC
正式發行
Dec, 2015-Ver1.2
02
ME85P03/ ME85P03-G
P- Channel 30V (D-S) MOSFET
Typical Characteristics (T
J
=25
℃
Noted)
DCC
正式發行
Dec, 2015-Ver1.2
03
ME85P03/ ME85P03-G
P- Channel 30V (D-S) MOSFET
Typical Characteristics (T
J
=25
℃
Noted)
DCC
正式發行
Dec, 2015-Ver1.2
04
ME85P03/ ME85P03-G
P- Channel 30V (D-S) MOSFET
TO-252 Package Outline
MAX
2.50
0.90
0.90
6.30
2.90
6.75
5.50
1.80
1.10
SYMBOL
MIN
2.10
0.40
0.40
5.30
2.20
6.30
4.80
0.90
0.50
0.00
8.90
A
B
C
D
D1
E
E1
L1
L2
L3
H
0.20
10.40
P
2.30 BSC
DCC
正式發行
Dec, 2015-Ver1.2
05
