MATSUKI-ME95N03-G
| Part # | MATSUKI-ME95N03-G |
Download  | MATSUKI-ME95N03-G |
ME95N03/ME95N03-G
N- Channel 30V (D-S) MOSFET
GENERAL DESCRIPTION
FEATURES
●
R
DS(ON)
≦
3.2
mΩ@V
GS
=10V
The ME95N03 is the N-Channel logic enhancement mode power
field effect transistors are produced using high cell density DMOS
trench technolog
y
.
T
his high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as LCD inverter, computer power
management and DC to DC converter circuits which need low in-line
power loss.
●
R
DS(ON)
≦
4.2
mΩ@V
GS
=4.5V
●
Super high density cell design for extremely low R
DS(ON)
●
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
●
Power Management
●
DC/DC Converter
●
LCD TV & Monitor Display inverter
●
CCFL inverter
PIN CONFIGURATION
●
Secondary Synchronous Rectification
(TO-252-3L)
T
o
p View
e
Ordering Information
: ME95N03 (Pb-free)
ME95N03-G (Green product-Halogen free)
Absolute Maximum Ratings
(T
A
=25
℃
Unless Otherwise Noted)
Parameter
Symbol
V
DS
Unit
V
Maximum Ratings
Drain-Source Voltage
30
±20
Gate-Source Voltage
V
GS
V
T
C
=25
℃
T
C
=70
℃
100
Continuous Drain Current*
Pulsed Drain Current
I
D
A
A
80
I
DM
P
D
400
T
C
=25
℃
T
C
=70
℃
54.4
34.8
-55 to 150
2.3
Maximum Power Dissipation
Operating Junction
T
e
mperature
W
℃
T
J
℃
/W
Thermal Resistance-Junction to Case**
R
θJC
* Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 70A.
** The device mounted on 1in
2
FR4 board with 2 oz copper.
DCC
正式發行
Dec, 2015-Ver1.2
01
ME95N03/ME95N03-G
N- Channel 30V (D-S) MOSFET
Electrical Characteristics
(T
A
=25
℃
Unless Otherwise Specified)
Symbol Parameter
S
T
ATIC
Conditions
Min
Typ
Max
Unit
V
(BR)DSS
V
GS(th)
I
GSS
V
GS
=0V, I
D
=250μA
V
DS
=V
GS
, I
D
=250μA
V
DS
=0V, V
GS
=±20V
V
DS
=30V, V
GS
=0V
V
GS
=10V, I
D
= 20A
V
GS
=4.5V, I
D
= 20A
I
S
=1.0A, V
GS
=0V
30
1
V
V
Drain-Source Breakdown Voltage
Gate Threshold Voltage
3
±100
1
Gate Leakage Current
nA
μA
I
DSS
Zero Gate Voltage Drain Current
2.6
3.3
0.6
3.2
4.2
1.2
R
DS(ON)
Drain-Source On-State Resistance
a
Diode Forward Voltage
mΩ
V
SD
V
DYNAMIC
Qg
T
o
tal Gate Charge
V
DD
=15V, V
GS
=10V, I
D
=20A
V
DD
=15V, V
GS
=4.5V, I
D
=20A
134
68
Qg
T
o
tal Gate Charge
nC
pF
ns
Qgs
Qgd
Ciss
Coss
Crss
t
d(on)
t
r
Gate-Source Charge
Gate-Drain Charge
Input capacitance
23
33
6217
855
304
36
Output Capacitance
Reverse Transfer Capacitance
T
u
rn-On Delay
T
i
me
T
u
rn-On Rise
T
i
me
T
u
rn-Off Delay
T
i
me
T
u
rn-Off Fall Time
V
DS
=15V, V
GS
=0
V
,
f
=1MHz
23
V
DS
=15V, V
GS
=10V,
R
G
=3
Ω, R
L
=15Ω
I
D
=1A
t
d(off)
t
f
126
28
Notes: a. Pulse test: pulse width
≦
300us, duty cycle
≦
2%, Guaranteed by design, not subject to production testing.
b.
Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
DCC
正式發行
Dec, 2015-Ver1.2
02
ME95N03/ME95N03-G
N- Channel 30V (D-S) MOSFET
Typical Characteristics (T
J
=25
℃
Noted)
DCC
正式發行
Dec, 2015-Ver1.2
03
ME95N03/ME95N03-G
N- Channel 30V (D-S) MOSFET
Typical Characteristics (T
J
=25
℃
Noted)
DCC
正式發行
Dec, 2015-Ver1.2
04
ME95N03/ME95N03-G
N- Channel 30V (D-S) MOSFET
TO-252-3L Package Outline
MAX
2.50
0.90
0.90
6.30
2.90
6.75
5.50
1.80
1.10
SYMBOL
MIN
2.10
0.40
0.40
5.30
2.20
6.30
4.80
0.90
0.50
0.00
8.90
A
B
C
D
D1
E
E1
L1
L2
L3
H
0.20
10.40
P
2.30 BSC
DCC
正式發行
Dec, 2015-Ver1.2
05
