Maxscend-MXDLN16T
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MXDLN16T
GPS Low Noise Amplifier
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(Maxscend) and may not be reproduced in any form without express written consent of Maxscend.
No
transfer or licensing of technology is implied by this document.
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MXDLN16T
Low Noise GPS Amplifier
General Description
Features
MXDLN16T high gain, low noise amplifier (LNA) is
dedicated to GPS, GLONASS Galileo and Beidou
standards. This product has an extremely low
noise figure of 0.6dB, 18.5dB gain and excellent
linearity.
High Gain: 18.5dB
Low noise figure 0.6dB @ 1575.42MHz
Low operation current 7 mA & PD current
less than 1uA
MXDLN16T works under a 1.2V to 2.85V single
power supply while consumes 7 mA current, in
power down (PD) mode, the power consumption
will be reduced to less than 1uA.
Single supply voltage range 1.2V to 2.85V
Small package 1.1mmx0.7mmx0.45mm
Low cost BOM
Lead-Free and RoHS-Compliant
MXDLN16T uses a small 1.1mmx0.7mmx0.45mm
LGA 6-pin package.
Applications
Automotive Navigation
Personal Navigation Device (PND)
Cell Phone with GPS
MID/PAD with GPS
Pin Configuration/Application Diagram (Top view)
GND
RFOUT
RF
o
utput
4
3
VDD
MXDLN16T
RF
i
nput
L1
RF
I
N
VDD
GND
5
6
2
1
0. 1 u F
En
a
b
le
EN
Figure 1.MXDLN16T application circuit
Number
Vendor
Part Number
Sunlord
Murata
Various
SDWL1005C10N, 10nH
LQW15AN10N, 10nH
Ceramic inductor, 10nH
L1
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MXDLN16T
Low Noise GPS Amplifier
Absolute Maximum Ratings
Table 1.
Parameters
Power supply
Other Pin to GND
Range
-0.3 ~ 3
-0.3~VDD+0.3
10
Units
V
V
dBm
℃
℃
℃
℃
℃
V
Maximum RF Input Power
Operation Temperature Range
Junction Temperature
Storage temperature Range
Lead Temperature (soldering)
Soldering Temperature (reflow)
Human Body Mode ESD
Machine Mode ESD
-40~85
150
-65~160
260
260
-2000~+2000
-125~+125
-500~+500
V
V
Charge Device Mode ESD
Specifications
DC Characteristics
Typically T
A
=25
℃
VDD=2.8V, unless otherwise noted
Table 2.
Parameters
Supply Voltage
Condition
Min
1.1
Typ
2.8
7
Max
2.85
Units
V
EN=High
VDD = 1.2V
EN=Low
mA
Supply Current
3.6
1
uA
V
V
EN Input High
EN Input Low
0.8
0.6
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AC Characteristics
Typically T
A
=25
℃
VDD=2.8V, all data measured on Maxscend’s EVB, unless otherwise noted
Table 3.
Parameters
RF Frequency Range
Conditions
None
Min
Typ
1575.42
18.5
18.5
0.6
Max
Units
MHz
Power Gain
dB
dB
Note7
Noise Figure
Note7
0.8
-12
-10
-12
-11
-28
Note1
Note7
Note1
Note7
Note1
Input Return Loss
Output Return Loss
Reverse Isolation
VSWR
dB
dB
dB
Note1
Note2
Note3
1.7
0.85
Jammed Noise Figure
Stability
dB
1.5
1575MHz
900MHz
2400MHz
Note4
-9
-11
-5
Input Power 1-dB Compression Point
dBm
-1
Input In-Band IP3
Input Out-Band IP3
Input IP2
dBm
dBm
dBm
Note5
Note6
+15
43
Note1:
sweep power -30dBm, 1575.42MHz
Note2:
jammed signal @ 1.8GHz & 950MHz, -30dBm
Note3:
frequency range 500MHz-5GHz
Note4:
f1 = 1574.5 MHz, f2 = 1575.5 MHz, -30dBm
Note5:
f1 = 2400 MHz, f2 = 2000 MHz, -30dBm
IP3 = pin-(IM3- Gain
1575MHz
)/2
Note6:
f1 = 2475 MHz, f2 = 900 MHz, -30dBm, IP2 = pin-(IM2-Gain
1575MHz
), IMD2 referred to input port.
Note7:
Beidou frequency range
B1
：
1559.052MHz—1591.788MHz
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3
3
2
1
2
1
Figire 2. Current vs Power Supply over Temperature
Figire 3. Current vs Input Power over Power Supply
1. -40
℃
2. +25
℃
3. +85
℃
TA = 25
℃
1. 1.2V
2. 1.8V
3. 2.8V
3
2
1
2
3
1
Figire 4. Gain vs Frequency over Temperature
Figire 5. Gain vs Frequency over Power Supply
TA = 25
℃
1. 1.2V
2. 1.8V
3. 2.8V
VDD =1.2V
1. -40
℃
2. +25
℃
3. +85
℃
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3
2
1
2
3
1
Figire 6. Gain vs Frequency over Temperature
Figire 7. Noise Figure vs Power Supply over temperature
VDD =2.8V
VDD=2.8V
1. -40
℃
2. +25
℃
3. +85
℃
1. -40
℃
2. +25
℃
3. +85
℃
2
3
1
1
3
2
Figire 8. Noise Figure vs Frequency over temperature
Figire 9. Jammed Noise Figure vs Jam Strength over
temperature
VDD=2.8V
1. -40
℃
2. +25
℃
3. +85
℃
VDD=2.8V
1. -40
℃
2. +25
℃
3. +85
℃
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1
2
1
3
2
3
Figire 12. Gain vs Input Power over temperature
Figire 11. Gain vs Input Power over temperature
VDD=1.8V
VDD=2.8V
1. -40
℃
2. +25
℃
3. +85
℃
1. -40
℃
2. +25
℃
3. +85
℃
3
1
2
1
2
3
Figire 12. In-Band IIP3
vs Input Power over temperature
Figire 13. In-Band IIP3
vs Input Power over temperature
VDD=2.8V, f1=1574.5MHz,f2=1575.5MHz
VDD=1.2V, f1=1574.5MHz,f2=1575.5MHz
1. -40
℃
2. +25
℃
3. +85
℃
1. -40
℃
2. +25
℃
3. +85
℃
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3
1
2
3
2
1
Figire 14. Out-Band
IIP3 vs Input Power over temperature
Figire 15. Out-Band
IIP3 vs Input Power over temperature
VDD=2.8V, f1=2175MHz,f2=1875MHz
VDD=1.2V, f1=2175MHz,f2=1875MHz
1. -40
℃
2. +25
℃
3. +85
℃
1. -40
℃
2. +25
℃
3. +85
℃
1
2
3
1
2
3
Figire 16. Input IIP2 vs Input Power over temperature
Figire 17. Input IIP2 vs Input Power over temperature
VDD=2.8V, f1=2475MHz,f2=900MHz
VDD=1.2V, f1=2475MHz,f2=900MHz
1. -40
℃
2. +25
℃
3. +85
℃
1. -40
℃
2. +25
℃
3. +85
℃
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1
2
3
3
2
1
Figire 18. Input Return Loss vs Frequency over Power
Supply
Figire 19. Output Return Loss vs Frequency over Power
Supply
Ta = 25
℃
1. 1.2V
2. 1.8V
3. 2.8V
Ta = 25
℃
1. 1.2V
2. 1.8V
3. 2.8V
1
2
1
3
2
3
Figire 20. Input Return Loss vs Frequency over
Temperature
Figire 21. Output Return Loss vs Frequency over
Temperature
VDD = 2.8V
VDD = 2.8V
1. -40
℃
2. +25
℃
3. +85
℃
1. -40
℃
2. +25
℃
3. +85
℃
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1
2
1
3
2
3
Figire 22. Input Return Loss vs Frequency over
Temperature
Figire 23. Output Return Loss vs Frequency over
Temperature
VDD = 1.2V
VDD = 1.2V
1. -40
℃
2. +25
℃
3. +85
℃
1. -40
℃
2. +25
℃
3. +85
℃
1
2
3
1
2
3
Figire 24. Rollet Stability Factor vs Frequency over
Temperature
Figire 25. Isolation vs Frequency over Temperature
VDD = 1.2V, Input Power = -30dBm
VDD = 2.8V, Input Power = -50dBm
1. -40
℃
2. +25
℃
3. +85
℃
1. -40
℃
2. +25
℃
3. +85
℃
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1
1
2
2
3
3
Figire 26. Isolationvs Frequency over Temperature
Figire 27. Isolation vs Frequency over Temperature
VDD = 2.8V, Input Power = -30dBm
Ta = 25
℃
, Input Power = -30dBm
1. -40
℃
2. +25
℃
3. +85
℃
1. 1.2V
2. 1.8V
3. 2.8V
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Pin Descriptions
Table 4.
Pin
1
2
3
4
Pin Name
GND
VDD
RFOUT
GND
I/O
AG
AP
AO
AG
AI
Pin Description
Analog VSS
Power supply, 1.1~2.85V
LNA output
Analog VSS
LNA input from antenna
5
RFIN
6
EN
DI
Pull high enable, pull low into power down mode
Note:
DI
(digital input),
DO
(digital output),
DIO
(digital bidirectional),
AI
(analog input),
AO
(analog output),
AIO
(analog bidirectional),
AP
(analog power),
AG
(analog ground),
Outline Dimensions
aaa
C
D
A
C
ccc
A3
A2
A
SIDE VIEW
C
aaa
LASER MARK FOR PIN1
IDENTIFICATION IN THIS AREA
TOP VIEW
e
ALL DIMENSIONS ARE IN MILLIMETERS.
0.050
MILLIMETER
NOR. MAX.
INCH
NOR.
SYMBOL
MIN.
0.40
0.09
0.31
0.35
0.65
1.05
MIN.
0.50 0.0157
0.15 0.0035
0.35 0.0122
0.45 0.0138
0.85 0.0256
1.15 0.0413
MAX.
0.0197
0.0059
0.0138
0.0177
0.0295
0.0453
A
A2
A3
e
D
E
0.45
0.12
0.33
0.40
0.70
1.10
0.10
0.0177
0.0047
0.0130
0.0157
0.0276
0.0433
0.0039
A
A
A
A
A
A
B
PIN1 ID
aaa
ccc
0.20
0.0079
0.050
BOTTOM VIEW
0.1±0.035
B
0.2±0.035
0.2±0.035
0.2±0.035
A
0.1±0.035
0.2±0.035
Figure 2. MXDLN16T outline dimension
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Reflow Chart
Figure 3. Recommended Lead-Free Reflow Profile
Table 5.
Profile Parameter
Lead-Free Assembly,Convection,IR/Convection
Ramp-up rate
（
TS
max
to T
p
）
Preheat temperature
（
TS
min
to TS
max
Preheat time
（
t
s
）
3
℃
/second max.
150
℃
to 200
℃
60 – 180 seconds
60 – 150 seconds
260
℃
）
Time above TL , 217
℃（
t
L
）
Peak temperature
（
T
p
）
Time within 5
℃
of peak temperature(t
p
)
Ramp-down rate
20 – 40 seconds
6
℃
/second max.
8 minutes max.
Time 25
℃
to peak temperature
ESD Sensitivity
Integrated circuits are ESD sensitive and can be damaged by static electric charge. Proper ESD
protection techniques should be used when handling these devices.
RoHS Compliant
This product does not contain lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls
(PBB) and polybrominated diphenyl ethers (PBDE), and are considered RoHS compliant.
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