MCC-Micro-Commercial-Components-2N7002KWHE3-TP
| Part # | MCC-Micro-Commercial-Components-2N7002KWHE3-TP |
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ꢀ1ꢁꢂꢂꢀ.
:
HE3
Features
• Halogen
Free. “Green” Device
(1)
• AEC-Q101
Qualified
• High
Density Cell Design for Low R
DS(ON)
• Voltage
Controlled Small Signal Switch
• Epoxy
Meets UL 94 V-0 Flammability Rating
• Moisture
Sensitivity Level 1
1ꢁ&KDQQHO
026)(7
• Lead
Free Finish/RoHS Compliant (“P” Suffix Designates RoHS
Compliant. See Ordering Information)
Maximum Ratings
• Operating
Junction Temperature Range: -55°C to +150°C
• Storage
T
e
mperature: -55°C to +150°C
SOT-323
• Thermal
Resistance: 625°C/W Junction to Ambient
A
D
Parameter
Drain-Source Voltage
Rating
60
Unit
V
Symbol
V
DS
ꢀ
C
B
Gate-Source Voltage
V
GS
±20
V
ꢁ
ꢂ
I
D
0.34
0.20
A
Drain Current-Continuous
Power Dissipation
F
E
H
P
D
W
J
G
Note: 1.
Halogen free “Green” products are defined as those which contain <900ppm bromine,
<900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
K
L
DIMENSIONS
MM
MIN MAX MIN MAX
0.071 0.087
1.80 2.20
0.045 0.053
1.15 1.35
0.083 0.096
2.10 2.45
INCHES
DIM
NOTE
,QWHUQDOꢀ6WUXFWXUH
and Marking Code
A
B
C
D
E
F
G
H
J
D
1.
GATE
0.026
0.65
TYP.
2.
SOURCE
0.047 0.055
1.20 1.40
0.012 0.016
0.30 0.40
0.000 0.004
0.00 0.10
0.035
0.044
0.90
1.10
0.002
0.010
0.05
0.25
0.006 0.016
0.15 0.40
0.0
10
0.01
8
0.
26
0.4
6
3.
DRAIN
72K
.
G
S
K
L
4VHHFTUFEꢀ4PMEFSꢀ1BEꢀ-BZPVU
0.70
(mm)
0.90
1.90
0.65
0.65
Rev.3-
4
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817
2022
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ꢀ1ꢁꢂꢂꢀ.
:
HE3
ELECTRICAL CHARACTERISTICS (T
a
=25
Я
unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Static Characteristics
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
(2)
V
(BR)DSS
V
GS
=0V, I
D
=250µA
V
V
60
V
GS(th)
V
DS
=V
GS
, I
D
=1mA
V
DS
=48V, V
GS
=0V
1.0
2.0
µA
µA
1.0
±10
2.5
3.0
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
V
GS
=±20V, V
DS
=0V
V
GS
=10V, I
D
=300mA
V
GS
=4.5V, I
D
=200mA
Drain-Source On-Resistance
(2)
Ω
R
DS(on)
V
SD
Q
r
V
GS
=0V, I
S
=300mA
Diode Forward Voltage
Recovered Charge
V
1.5
V
GS
=0V, I
S
=300mA,V
R
=25V
dl/dt
=-100A/μs
nC
30
Dynami
F
Characteristics
Input Capacitance
(3)
Output Capacitance
(3)
C
iss
C
oss
C
rss
40
30
10
V
DS
=10V,V
GS
=0V, f=1MHz
pF
ns
Reverse Transfer Capacitance
(3)
Switching Characteristics
Turn-On Delay
Time
(3)
t
d(on)
10
15
V
DD
=50V,V
GS
=10V,R
L
=250
˖
,
R
GS
=50Ω,R
GEN
=25
˖
Turn-Off Delay
Time
(3)
Reverse Recovery Time
t
d(off)
t
rr
V
GS
=0V, I
S
=300mA,V
R
=25V,
dl/dt=-100A/μs
30
*DWHꢁ6RXUFHꢀ=HQHUꢀ’LRGH
BV
GSO
I
GS
=±1mA (Open Drain)
Gate-Source Breakdown Voltage
±21.5
±30
V
Note: 2. Pulse Test: Pulse Width
İ
300μs, Duty Cycle
İ
2%.
3. These Parameters Have No Way to Verify.
Rev.3-
4
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ꢀ1ꢁꢂꢂꢀ.
:
HE3
Curve Characteristics
Fig. 2 – Transfer Characteristics
Fig. 1 – Output Characteristics
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.2
1.0
0.8
0.6
0.4
0.2
0.0
T
A
=25°C
Pulsed
V
DS
= 3V
Pulesd
V
GS
=5V,6V,7V,10V
V
GS
=4V
T
A
=100°C
T
A
=25°C
V
GS
=3V
0
1
2
3
4
5
0
2
4
6
8
Drain To Source Voltage (V)
Gate To Source Voltage (V)
Fig. 4 – R
DS(ON)
Ă
V
GS
Fig. 3 – R
DS(ON)
Ă
I
D
10
8
5
4
3
2
1
0
T
A
=25°C
Pulsed
T
A
=25°C
Pulsed
6
I
D
=0.3A
V
GS
=4.5V
4
2
V
GS
=10V
0
0.0
0.3
0.6
0.9
1.2
1.5
0
2
4
6
8
10
Drain Current (A)
Gate To Source Voltage (V)
Fig. 5 – I
S
Ă
V
SD
Fig. 6 – Threshold Voltage
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
2
1
Pulsed
I
D
= 250μA
0.1
T
A
=100°C
T
A
=25°C
0.01
0.001
25
50
75
100
125
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Junction Temperature
(°C)
Source To Drain Voltage (V)
Rev.3-
4
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0
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2022
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Rev.3-
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–
0
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2022
4/4
