MCC-Micro-Commercial-Components-2SB1188-Q-TP
| Part # | MCC-Micro-Commercial-Components-2SB1188-Q-TP |
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2S
B11
88
–
P
/
2SB1188-
Q
/
2SB1188-
R
Features
•
•
•
•
Halogen Free. “Green” Device (Note 1)
Moisture Sensitivity Level 1
Epoxy Meets UL 94 V-0 Flammability Rating
PNP
Lead Free Finish/RoHS Compliant (“P” Suffix Designates RoHS
Compliant. See Ordering Information)
Plastic Encapsulate
Transistors
Maximum Ratings @ 25°C Unless Otherwise Specified
•
•
•
Operating Junction Temperature Range: -55
℃
to +150
℃
Storage
Temperature Range: -55
℃
to +150
℃
Thermal Resistance:
250
℃
/W
Junction to
Ambient
SOT-89
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
CM
Rating
-40
Unit
V
A
K
B
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-32
V
-5.0
–
2
.0
500
V
C
E
Maxmium Collector Current
Collector Power Dissipation
A
P
C
mW
D
H
G
J
F
2
Classification Of h
FE
Rank
Range
Marking
P
Q
R
L
L
82-180
120-270
B
C
Q
180-390
1
3
B
C
P
B
C
R
DIMENSIONS
MM
INCHES
DIM
NOTE
Note: 1.
Halogen free “Green” products are defined as those which contain <900ppm bromine,
MIN MAX MIN MAX
0.1
69
0.18
5
4.3
0
4.
7
0
1.
55
<900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
A
B
C
D
E
F
G
H
J
0.06
1
TYP
.
0.154
0.1
71
3.91
4.
3
5
0.031
0.0
47
0.80
1.
2
0
0.0
89
0.10
4
2.
25
2.
65
Pin Configuration – Top View
Internal Structure
TYP
.
TYP
.
0.118
3.00
C
C
0.013
0.0
20
0.33
0.
52
0.015 0.021
0.38 0.53
0.01
4
0.01
7
0.3
5
0.4
4
0.055 0.063
1.40 1.60
K
L
B
1.5
0
0.
059
Suggested Solder Pad Layout
E
1.900
0.075
B
C
E
mm
inches
0.800
0.032
2.600
0.102
3.200
0.126
0.900
0.035
1.400
0.055
1.500
0.059
4.400
0.173
1.400
0.055
Rev.3-4-03082022
1/4
2S
B11
88
–
P
/
2SB1188-
Q
/
2SB1188-
R
Electrical Characteristics @ 25°C Unless Otherwise Specified
Parameter
Symbol Min
Typ
Max Units
Conditions
I
C
=-50µA, I
E
=0
V
(BR)C
B
O
V
(BR)CEO
V
(BR)EBO
I
CBO
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain
(Note
2
)
-40
-32
-5.0
V
V
I
C
=-1mA, I
B
=0
I
E
=-50µA, I
C
=0
V
V
CB
=-20V, I
E
=0
–
1.0
–
1.0
390
-0.
8
µA
µA
I
EBO
V
EB
=-4.0V, I
C
=0
h
FE
V
CE
=-3.0V, I
C
=-0.
5
A
I
C
=-
2
A, I
B
=-
0.2
A
82
Collector-Emitter Saturation Voltage
(Note
2
)
V
V
CE(sat)
f
T
V
CE
=-5.0V, I
C
=-
0.5
A, f=30MHz
V
CB
=-10V, I
E
=0, f=1.0MHz
Transition Frequency
8
0
MHz
pF
C
ob
Collector
Output
Capacitance
65
Note
2
. Measured Using Pulse Current.
Rev.3-4-03082022
2/4
2S
B11
88
–
P
/
2SB1188-
Q
/
2SB1188-
R
Curve Characteristics
Fig. 2 – DC Current Gain Characteristics
Common Emitter
Fig. 1 – Static Characteristics
1000
100
10
-700
-600
-500
-400
-300
-200
-100
0
C
ommon
E
mitter
V
CE
=-3V
T
A
=25°C
T
A
=100°C
-2.0mA
-1.8mA
-1.6mA
T
A
=25°C
-1.4mA
-1.2mA
-1.0mA
-0.8mA
-0.6mA
-0.4mA
I
B
= -0.2mA
–
2
000
-1000
–
5
-10
-100
Collector Current (mA)
0
-1
-2
-3
-4
-5
-6
Collector-Emitter Voltage (V)
Fig. 4 – Base-Emitter Saturation Voltage Characteristics
Fig. 3 – Collector-Emitter Saturation Voltage Characteristics
β=10
-1000
-100
-10
–
2
000
-1000
T
A
=25°C
T
A
=100°C
T
A
=100°C
T
A
=
25
°C
β=10
-1
-100
–
2
000
-1000
-1
-10
-100
–
2
000
-1000
-0.1
-1
-10
-100
Collector Current (mA)
Collector Current (mA)
Fig. 6 – Power Derating Curve
Fig. 5 – Base-Emitter Voltage Characteristics
Common Emitter
600
–
2
000
-1000
V
CE
=-3V
500
400
300
200
100
0
-100
-10
-1
T
A
=100°C
T
A
=25°C
-0.1
-0.0
0
25
50
75
100
125
150
-0.3
-0.6
Base-Emitter Voltage (V)
-0.9
-1.2
Ambient Temperature (°C)
Rev.3-4-03082022
3/4
2S
B11
88
–
P
/
2SB1188-
Q
/
2SB1188-
R
Ordering Information
Device
Part Number-TP
Packing
Tape&Reel
:
1Kpcs/Reel
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Rev.3-4-03082022
4/4
