MCC-Micro-Commercial-Components-SI2310AHE3-TP
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SI
2310A
HE3
Features
•
•
AEC-Q101 Qualification
Lead Free Finish/RoHS Compliant (“P” Suffix Designates RoHS
Compliant. See Ordering Information)
N
-Channel
•
•
•
Epoxy Meets UL 94 V-0 Flammability Rating
Moisture Sensitivity Level 1
Halogen Free. “Green” Device
(Note 1)
Enhancement Mode
Field Effect Transistor
Maximum Ratings
•
•
Operating Junction Temperature Range : -55°C to +150°C
Storage Temperature Range: -55°C to +150°C
SOT-23
•
Thermal Resistance:
105
°C/W Junction to Ambient
(Note 2)
A
D
3
Parameter
Drain-Source Voltage
Rating
60
Symbol
Unit
V
B
C
V
DS
1
2
F
E
Gate-Source Volltage
Drain Current
V
GS
I
D
±
20
V
3.0
A
H
G
J
L
K
Pulsed Drain Current
(Note
3
)
Total Power Dissipation
I
DM
P
D
10
A
DIMENSIONS
MM
1.
2
W
INCHES
DIM
NOTE
Note: 1.
Halogen free “Green” products are defined as those which contain <900ppm bromine,
MIN MAX MIN MAX
0.110 0.120
2.80
3.04
0.083 0.104
2.10 2.64
0.047 0.055
1.20 1.40
0.03
4
0.041
0.8
5
1.0
5
0.0
67
0.08
3
1.7
0
2.
10
0.018 0.024
0.45 0.60
<900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
A
B
C
D
E
F
2.
Device
M
ounted on FR-4 PCB, 1 inch
2 pad of
2oz copper.
3.
Repetitive
R
ating : Pulse
W
idth
L
imited by
J
unction
T
emperature.
G
H
J
K
L
0.01 0.1
5
0.000
4
0.00
6
0.035
0.04
3
0.
90
1.1
0
0.003
0.007 0.08
0.18
0.01
4
0.020
0.3
5
0.51
Internal Structure
and Marki
ng
Code
0.020
0.50
0.00
7
0.20
Suggested Solder Pad Layout
D
0.
031
0.800
1.
*$7
E
0.035
0.900
2.
6285&(
S
10
.
0.079
2.000
in
ches
mm
3.
‘5$,1
G
0.
037
0.950
S
0.037
0.950
Rev.3-
3
-0
813
2022
1/4
SI
2310A
HE3
Electrical Characteristics
@ 25°C (Unless Otherwise Specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static Characteristics
V
(BR)DSS
V
GS
=0V, I
D
=250µA
Drain-Source Breakdown Voltage
60
V
V
DS
=0V, V
GS
=±20V
I
GSS
±100
±50
1
Gate-Source Leakage Current
nA
V
DS
=0V, V
GS
=±10V
I
DSS
V
DS
=60V, V
GS
=0V
Zero Gate Voltage Drain Current
Gate-Threshold Voltage
(Note4)
µA
V
V
GS(th)
V
DS
=V
GS
, I
D
=250µA
0.90
2.0
100
120
1.2
V
GS
=10V, I
D
=3A
R
DS(on)
mΩ
mΩ
V
Drain-Source On-Resistance
(Note4)
V
GS
=4.5V, I
D
=2A
Diode Forward Voltage
(Note4)
V
SD
V
GS
=0V, I
S
=3A
Dynamic Characteristics
(Note5,6)
Input Capacitance
C
iss
C
oss
C
rss
Q
g
409
50
V
DS
=10V,V
GS
=0V,f=1MHz
pF
nC
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
41
10.27
1.65
2.11
6.99
32.6
3.6
V
DS
=30V,V
GS
=10V,I
D
=3A
I
SD
=3A, di/dt=100A/us
Q
gs
Q
gd
Q
rr
Gate-Source Charge
Gate-Drain Charge
Reverse Recovery Charge
Reverse Recovery Time
Turn-On Delay
Time
Turn-On Rise
Time
T
rr
t
d(on)
t
r
t
d(off)
t
f
ns
17.6
13
V
GS
=10V,V
DS
=30V,
R
L
=20Ω,R
G
=3Ω
Turn-Off Delay
Time
Turn-Off Fall
Time
23
Note
4
. Pulse Test : Pulse Width
≤
300μs, Duty Cycle
≤
2%.
5.
S
witching characteristics are independent of operating junction temperature.
6.
G
uaranteed by Design, Not Subject to Production Testing.
Rev.3-
3
-0
813
2022
2/4
SI
2310A
HE3
Curve Characteristics
Fig. 2 – Transfer Characteristics
Fig. 1 – Output Charact eristics
16
12
8
16
12
8
V
GS
=10V
V
DS
=5V
Pulesd
V
GS
=4V
V
GS
=3V
V
GS
=2.5V
T
A
=125°C
4
4
T
A
=25°C
2.5
V
GS
=2V
1.5
0
0
0.0
0.5
1.0
1.5
2.0
3.0
3.5
0.0
0.5
1.0
2.0
10
12
Gate To Source Voltage (V)
Drain To Source Voltage (V)
Fig. 3 – R
DS(ON)
—I
D
V
GS
=4.5V
Fig. 4 – Normalized On Resistance Characteristics
120
100
80
60
40
20
0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
V
GS
=10V
I
D
=3A
V
GS
=10V
0
2
4
6
8
25
50
75
100
125
150
Drain Current(A)
Junction Temperature(°C)
Fig. 5 – Gate Charge
Fig. 6 – Capacitance Characteristics
800
700
600
500
400
300
200
100
10
8
V
DS
=30V
I
D
=3A
C
iss
6
4
C
oss
2
C
rss
0
0
4
8
12
16
20
0
2
4
6
8
10
Drain To Source Voltage (V)
Gate Charge(nC)
Rev.3-
3
-0
813
2022
3/4
SI
2310A
HE3
Ordering Information
Device
Packing
Part Number-TP
Tape&Reel:
3
Kpcs/Reel
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Rev.3-
3
-0
813
2022
4/4
