MDD-Microdiode-Electronics-AO3402
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AO34
02
SO
T
-23 Plastic-Encapsulate
MOSFETS
3
0V N-Channel
MOSFET
S
OT-23
I
D
V
(BR)DSS
R
DS(on)
MAX
3
mΩ@10V
28
5
A
30V
m
34
Ω@4.5V
1. GATE
2. SOURCE
3. DRAIN
1
2
Features
Lead free product is acquired
Surface mount package
Equivalent circuit
M
ARKING
D
A29T
G
S
PACKAGE SPECIFICATIONS
Q’TY/Reel
(pcs)
Reel DIA.
(mm)
Box Size
(mm)
QTY/Box
(pcs)
Q’TY/Carton
Carton Size
(mm)
Package
Reel Size
(pcs)
SOT-23
7′
3000
203×203×195
450
0
0
180000
178
438×438×220
Maximum Ratings and Thermal Characteristics (TA = 25
°
C unless otherwise noted)
Parameter
Symbol
V
DS
Limit
30
Unit
Drain-Source Voltage
Gate-Source Voltage
V
V
GS
±16
5.0
4
T
A
=25
℃
Continuous Drain Current
I
D
A
T
A
=70
℃
T
A
=25
℃
1.5
Maximum Power Dissipatio
n
2)
P
D
W
T
A
=70
℃
0
.9
Pulsed Drain Current
1)
I
DM
T
J
, T
stg
R
θJA
A
o
C
20.4
Operating Junction and Storage
T
e
mperature Range
Thermal Resistance Junction-Ambient
Notes
-50 to 150
80
o
C/W
1)
Pulse width limited by maximum junction temperature.
Surface Mounted on FR4 Board, t
v
5 sec.
2)
The above data are for reference only.
DN:T19C3
1
A0
Rev:2019A0
Page :1
AO340
2
MOSFET ELECTRICAL
CHARACTERISTICS
T =25
a
unless otherwise specified
℃
Symbol
Parameter
Test Condition
Min.
30
Typ.
Miax.
Unit
V
Static
Drain-Source Breakdown Voltage
BV
DSS
V
GS
= 0
V
,
I
D
= 250uA
V
GS
=
10
V, I
D
=
4
.0
A
3
6
2
8
34
55
0.
8
Drain-Source On-State Resistance
1)
R
DS(on)
m
Ω
V
GS
=
4
.5V, I
D
=
3
.
0A
V
GS
= 2.5V,
I
D
= 1
.0
A
V
D
S
=V
GS
, I
D
= 250uA
5
0
80
1.
2
1
Gate Threshold Voltage
V
GS(th)
I
DSS
I
GSS
g
fs
0.
5
V
uA
Zero Gate Voltage Drain Current
V
DS
=
30
V, V
GS
=0V
V
GS
=±16
V
,
V
DS
=0V
Gate Body Leakage
Forward Transconductance
1)
Dynamic
100
nA
S
8
V
DS
=15V
,
I
D
= 4A
T
o
tal Gate Charge
Q
g
Q
gs
Q
gd
t
d(on)
t
r
3.1
0.4
1.3
4.4
2.6
25.5
3.3
240
3
5
V
DS
= 15V, I
D
= 4A
V
GS
= 4.5V
nC
ns
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
V
DD
= 1
5
V, R
G
=
3.3
Ω
Turn-Off Delay Time
Turn-Off Fall Time
t
d(off)
t
f
I
=
10
V
D
= 1
A,V
G
S
Input Capacitance
C
iss
C
oss
C
rss
V
DS
= 15V, V
GS
= 0V
f = 1.0 MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Source drain current(Body Diode)
Diode Forward Voltage
30
I
SD
1.
8
A
1.2
V
V
SD
I
S
=
4
.0
A
, V
GS
= 0V
0.8
5
1)
Pulse test
:
Pulse width
≤
300
µ
s, duty cycle
≤
2%.
Rev:2019A0
Page :2
AO34
02
Typical Characteristics
V
DS
, Drain -Source Voltage (V)
Tj – Junction
T
e
mperature (°C)
Fig1.
Typical Output Characteristics
Fig2.
Normalized Threshold Voltage Vs.
T
e
mperature
V
GS
, Gate -Source Voltage (V)
ID , Drain Current (A)
Fig3.
Typical Transfer Characteristics
Fig4.
On-Resistance vs. Drain Current and Gate
V
SD
, Source-Drain Voltage (V)
V
DS
, Drain -Source Voltage (V)
Fig5.
Typical Source-Drain Diode Forward Voltage
Fig6.
Maximum Safe Operating Area
Rev:2019A0
Page :
3
AO34
02
Typical Characteristics
V
DS
, Drain-Source Voltage (V)
Fig7.
Typical Capacitance Vs. Drain-Source Voltage
Qg,
T
o
tal Gate Charge (nC)
Fig8.
Typical Gate Charge Vs. Gate-Source Voltage
Pulse Width (s)
Fig9.
Normalized Maximum Transient Thermal Impedance
Fig10.
Switching Time Test Circuit and waveforms
The curve above is for reference only.
Rev:2019A0
Page :
4
AO34
02
Outlitne Drawing
SOT-23 Package Outline Dimensions
Dimensions In Millimeters
Symbol
Min
0.9
0
0.00
0.30
0.08
2.80
1.20
2.25
1.80
0.
1
0
Typ
Max
A
A1
b
1.40
0.10
0.50
0.20
3.10
1.60
2.80
c
D
E
2.90
1.90
e
E1
e
2.00
0.50
0.55
10°
L
L1
θ
0.4
0°
Suggested
P
ad
Layout
0.037
0.95
Note:
0.037
0.95
1
.
Controlling dimension:in/millimeters.
2.General tolerance: ±0.05mm.
3.The pad layout is for reference purposes only.
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Rev:2019A0
Page :
5
