MDD-Microdiode-Electronics-MDD15N10D

MDD

15N10D  

100

V N-Channel Enhancement Mode MOSFET  

TO-252  

I

D

M

ax  

V

(BR)DSS  

R

DS(on)

Max  

@10V  

110

mΩ  

100

V

 

15

A  

@

120

mΩ

4.5

V  

2

1. Gate  

Features  

1

2. Drain  

3. Source  

● Trench Power

MV MOSFET technology  

●

Excellent package for heat dissipation  

●

High density cell design for low R

DS(ON)  

●

Moisture Sensitivity Level 1  

3

Application  

●

DC-DC Converters  

●

Epoxy Meets UL 94 V-0 Flammability Rating  

●

Halogen Free  

●

Power management functions  

Marking  

Equivale

n

t

C

ircuit  

XXX: Date Code  

MDD  

15N10D  

XXX  

Absolute Maximum Ratings (T

A

=25

℃

unless otherwise noted)  

Parameter  

Symbol  

Value  

Unit  

Drain-Source Voltage  

Gate-Source Voltage  

Continuous Drain Current  

V

DS  

100  

V

V

GS  

I

D  

±20  

15  

60  

9

V

A

Pulsed Drain Current (Note

1

)  

Avalanche Energy  

I

DM  

A

Single Pulsed (Note

2

)  

E

AS  

P

D  

mJ  

W

Power Dissipation  

28  

4.4  

R

θJC  

℃

/

W  

Thermal Resistance Junction-to-Case

(Note 3)  

Junction

T

e

mperature  

T

J  

150  

℃

℃

T

stg  

Storage

T

e

mperature  

-50 ~+150  

1.

Pulse Test: Pulse Width≤300us,Duty cycle ≤2%.  

2.

Tj=25

℃

, VDD=

50

V, VG=10V, L=0.5mH, IAS=

6

A  

Notes:  

3.

R

θJA

is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is  

defined as the solder mounting surface of the drain pins. R

θJC

is guaranteed by design, while R

θJA

is determined by the  

board design. The maximum rating presented here is based on mounting on a 1 in 2

 

pad of 2oz copper.  

1

/

6

 

V 1.0  

MDD

15N10D  

100

V N-Channel Enhancement Mode MOSFET  

Ta = 25

℃

unless otherwise specified  

Symbol  

V

(BR)DSS  

Parameter  

Condition  

Min  

Typ  

Max  

Unit  

Drain-Source Breakdown Voltage  

V

GS

=0

V

,

I

D

=250μA  

100  

—  

—  

V

V

D

S

=

100

V

,

V

G

S

=0V  

V

G

S

=

±

2

0

V

,

V

D

S

=0V  

V

DS

=V

GS

,

I

D

=250μA  

V

GS

=10

V

,

I

D

=

10

A  

V

GS

=

4.5

V

,

I

D

=

8

A  

I

D

SS  

Drain-Source Leakage Current  

Gate-Source Leakage Current  

Gate Threshold Voltage  

1

—  

—  

—  

—  

u

A  

n

A  

V

±

100  

2.5  

I

G

SS  

1.8  

95  

100  

V

GS(TH)  

1.1  

—  

110  

m

Ω  

m

Ω  

R

DS(ON)  

Drain-Source On-State Resistance  

—  

120  

Dynamic Electrical Characteristics  

Symbol  

Parameter  

Condition  

Min  

Typ  

Max  

Unit  

—  

C

iss  

Input Capacitance  

Output Capacitance  

—  

1070  

pF  

V

DS

=

50

V  

V

GS

=0V  

f

=1MHz  

C

oss  

C

rss  

Q

g  

—  

—  

—  

—  

—  

33  

30  

—  

—  

—  

—  

—  

pF  

pF  

nC  

nC  

nC  

Reverse Transfer Capacitance  

T

o

tal Gate Charge  

26  

V

DS

=

50

V,  

V

GS

=1

0

V,  

I

D

=

10

A  

Q

gs  

Q

gd  

Gate Source Charge  

Gate Drain Charge  

5.4  

5.8  

(Note1,2)  

Switching Characteristics  

Symbol  

Parameter  

Condition  

Min  

Typ  

Max  

Unit  

—  

7

—  

ns  

t

d(on)  

Turn on Delay Time  

V

DS

=

50

V,  

V

GS

=

10

V,  

R

G

=

3

Ω  

—  

—  

—  

24  

24  

31  

—  

—  

—  

ns  

ns  

ns  

t

r  

Turn on Rise Time  

Turn Off Delay Time  

Turn Off Fall Time  

t

d(off)  

t

f  

(Note1,2)  

Source Drain Diode Characteristics  

Symbol  

I

SD  

Parameter  

Source drain current(Body Diode)  

Pulsed Current  

Condition  

Min  

—  

Typ  

—  

Max  

15  

60  

1.2  

—  

Unit  

A

I

S

M  

V

SD  

t

rr  

—  

—  

A

I

S

=

15

A,

V

GS

=0V  

0.8  

40  

Drain-Source Diode Forward Voltage  

—  

—  

—  

V

Body Diode Reverse Recovery Time  

ns  

I

F

=

10

A,  

dI/dt=100A/µs  

30.1  

Body Diode Reverse Recovery Charge  

—  

n

C  

Q

rr  

Notes:  

1.

Pulse test ; Pulse width

 

300

u

s, duty cycle

 

2%.  

2.

Essentially independent of operating temperature.  

2 /

6

 

V 1.0  

MDD

15N10D  

100

V N-Channel Enhancement Mode MOSFET  

■

Typical Performance Characteristics  

Figure 1. Output Characteristics  

Figure 2. Transfer Characteristics  

Figure 3. On-Resistance vs. Drain Current  

and Gate Voltage  

Figure 4. On-Resistance vs. Junction Temperature  

Figure 5. Capacitance Characteristics  

Figure 6. Gate Charge  

3

/

6

 

MDD

15N10D  

100

V N-Channel Enhancement Mode MOSFET  

20  

15  

10  

5

0

-50  

0

50  

100  

150  

Tc

-Case Temperature

 

(

℃

)  

Figure 8. Maximum Continuous Drain Current  

vs Case Temperature  

Figure 7. Safe Operation Area  

Figure 9. Normalized Maximum Transient Thermal Impedance  

4

/

6

 

MDD

15N10D  

100

V N-Channel Enhancement Mode MOSFET  

Resistive Switching Test Circuit & Waveforms  

Diode Recovery Test Circuit & Waveforms  

Gate Charge Test Circuit & Waveform  

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms  

5

/

6

 

V 1.0  

MDD

15N10D  

100

V N-Channel Enhancement Mode MOSFET  

Outlitne

Drawing  

TO-252 Package Outline Dimensions  

Suggested Pad Layout  

Note:  

1

.

Controlling dimension:in/millimeters.  

2.General tolerance: ±0.05mm.  

3.The pad layout is for reference purposes only.  

6

/

6  

V 1.0