MDD-Microdiode-Electronics-MDD16N65F
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MDD
1
6
N
65F/MDD
1
6
N65P
650V N-Channel Enhancement Mode MOSFET
650 V
TO-220F
-3L
TO-220-3L
V
DS
I
D(Tc=25
℃
)
1
6
A
R
DS(on),max
Q
g,typ
0.
6
Ω@V
GS
=10V
53.9
nC
1
1
2
2
General Features
3
3
Ultra low gate charge
Low reverse transfer Capacitance
Fast switching capability
Avalanche energy tested
Improved dv/dt capability, high ruggedness
Equivale
n
t
C
ircuit
Application
High efeciency switch mode power supplies
Electronic lamp ballasts based on half bridge
LED power supplies
Absolute Maximum Ratings (T
A
=25
℃
unless otherwise noted)
Parameter
Symbol
V
DS
Value
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
650
V
V
GS
I
D
±30
16
V
A
64
Pulsed Drain Current(Note
1
)
I
DM
A
605
16
Avalanche Energy
Single Pulsed (Note
2
)
E
AS
I
S
mJ
A
Continuous diode forward current
Diode pulse current
I
S,pulse
dv/dt
64
5
A
Peak Diode Recovery dv/dt (Note
3
)
Power Dissipation TO-220F
Power Dissipation TO-220
V/ns
W
44
P
D
180
150
W
Junction
T
e
mperature
Storage
T
e
mperature
℃
T
J
T
stg
-55 ~150
℃
Thermal Characteristics
Value
Parameter
Symbol
Unit
TO-220F
TO-220
2.85
0.69
Thermal resistance, Junction-to-case
Thermal resistance, Junction-to-ambient
R
θJC
R
θJA
°C/W
°C/W
110
62.5
Notes
:
1.
Pulse width limited by maximum junction temperature.
2.
L=10mH, I
= 1
1
A, Starting T = 25°C.
j
AS
3.
I
= 1
6
A, di/dt
≤
100A/us, V
≤
BV ,
Starting T = 25°C.
DD DS
j
SD
1 /
8
V 1.0
MDD
1
6
N
65F/MDD
1
6
N65P
650V N-Channel Enhancement Mode MOSFET
Ta = 25
℃
unless otherwise specified
Symbol
Parameter
Condition
Min
Typ
Max
Unit
V
(BR)DSS
Drain-Source Breakdown Voltage
V
GS
=0
V
,
I
D
=250μA
650
—
—
V
V
GS
=30
V
,
V
DS
=0V
V
GS
=-30
V
,
V
DS
=0V
V
DS
=650
V
,
V
DS
=0V
V
DS
=VGS,
I
D
=250μA
V
GS
=10
V
,
I
D
=
8
A
—
—
—
—
100
-100
1
nA
nA
uA
V
Forward
Reverse
Gate-Source Leakage Current
I
GSS
I
DSS
Drain-Source Leakage Current
Gate Threshold Voltage
—
—
—
V
GS(TH)
2.0
—
4.0
0.6
0.48
Ω
R
DS(ON)
Drain-Source On-State Resistance
Dynamic Electrical Characteristics
Symbol
Parameter
Condition
Min
Typ
Max
Unit
C
iss
Input Capacitance
Output Capacitance
—
2640
—
pF
V
DS
=25V
V
GS
=0V
f
=1MHz
C
oss
C
rss
Q
g
—
—
—
—
—
235
15
—
—
—
—
—
pF
pF
nC
nC
nC
Reverse Transfer Capacitance
T
o
tal Gate Charge
53.9
13.4
20.1
V
DS
=520V,
V
GS
=10V,
I
D
=
1
6
A
Q
gs
Q
gd
Gate Source Charge
Gate Drain Charge
(Note1,2)
Switching Characteristics
Symbol
Parameter
Condition
Min
Typ
Max
Unit
—
15.4
ns
—
t
d(on)
Turn on Delay Time
V
DS
=325V,
I
D
=
1
6
A,
R
G
=10Ω (Note1,2)
—
—
—
—
—
—
41.0
88.7
17.8
ns
ns
ns
t
r
Turn on Rise Time
Turn Off Delay Time
Turn Off Fall Time
t
d(off)
t
f
Source Drain Diode Characteristics
Symbol
Parameter
Source drain current(Body Diode)
Pulsed Current
Condition
Min
—
Typ
—
Max
16
64
1.5
—
Unit
A
I
SD
I
SM
V
SD
t
rr
—
—
A
I
S
=
1
6
A,
V
GS
=0V
Drain-Source Diode Forward Voltage
Body Diode Reverse Recovery Time
—
—
—
V
V
R
=325
I
F
=
1
6
A
,
-d
i
/d
t
=100A/µs
448.4
5.38
ns
Body Diode Reverse Recovery Charge
—
—
uC
Q
rr
F
Notes:
1.
Pulse test ; Pulse width≤300
u
s, duty cycle≤2%.
2.
Essentially independent of operating temperature.
2
/
8
V 1.0
MDD
1
6
N
65F/MDD
1
6
N65P
650V N-Channel Enhancement Mode MOSFET
Electrical Characteristics Diagrams
Figure 1. Typical Output Characteristics
Figure 2. Transfer Characteristics
V
GS
=10V
T
c
= 25
°
C
V
GS
=8V
V
GS
=7V
V
GS
=5.5V
T
c
= 150
°
C
V
GS
=6V
V
GS
=4.5V
V
DS
,Drain−source voltage (V)
V
GS
,Gate−source voltage (V)
Figure 3. On-Resistance Variation vs. Drain Current
Figure 4. Threshold Voltage vs. Temperature
V
GS
= 10 V
T
c
= 25
°
C
Pulse test
I
DS
=0.25 mA
Pulse test
I
D
,Drain current (A)
T
j
,Junction temperature (
°
C)
Figure 5. Breakdown Voltage vs. Temperature
Figure 6. On-Resistance vs.
T
emperature
V
GS
=10 V
I
DS
=8 A
Pulse test
V
GS
=0 V
I
DS
=0.25 mA
Pulse test
T
j
,Junction temperature (
°
C)
T
j
,Junction temperature (
°
C)
3
/
8
V 1.0
MDD
1
6
N
65F/MDD
1
6
N65P
650V N-Channel Enhancement Mode MOSFET
Figure 7. Capacitance Characteristics
Figure 8. Gate Charge Characteristics
C
iss
V
DS
=520
C
oss
I
D
= 16 A
Notes:f = 1 MHz,V
GS
=0 V
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
C
rss
= C
gd
V
DS
,Drain-Source Voltage (V)
Q
G
,Total Gate Charge (nC)
Figure 9. Maximum Safe Operating Area
TO-220F
Figure 10. Maximum Safe Operating Area
TO-220
100us
100us
1ms
10ms
10ms
DC
1ms
DC
Limited by R
Limited by R
DS(on)
DS(on)
Notes:
Notes:
T
= 25
°
C
T
= 25
°
C
c
c
T = 150
°
C
T = 150
°
C
j
j
Single Pulse
Single Pulse
V
DS
,Drain-Source Voltage (V)
V
DS
,Drain-Source Voltage (V)
Figure 11. Power Dissipation vs. Temperature
TO-220F
Figure 12. Power Dissipation vs.
T
emperature
TO-220
T
c
,Case temperature (
°
C)
T
c
,Case temperature (
°
C)
4
/
8
V 1.0
MDD
1
6
N
65F/MDD
1
6
N65P
650V N-Channel Enhancement Mode MOSFET
Figure 13. Continuous Drain Current vs.
T
emperature
Figure 14. Body Diode Transfer Characteristics
T
c
= 150
°
C
T
c
= 25
°
C
V
SD
,Source-Drain Voltage (V)
T
c
,Case temperature (
°
C)
Figure 15 Transient Thermal Impedance, Junction to Case, TO-220F
P
DM
t
In descending order
D= 0.5, 0.2, 0.1, 0.05, 0.02, 0.01, single pulse
Duty = t/T
(t)=2.85
°
C/W Max.
T
Z
θJC
t ,Pulse Width (s)
Figure 16. Transient Thermal Impedance, Junction to Case, TO-220
P
DM
In descending order
t
D= 0.5, 0.2, 0.1, 0.05, 0.02, 0.01, single pulse
Duty = t/T
T
(t)=0.69
°
C/W Max.
Z
θJC
5
/
8
V 1.0
MDD
1
6
N
65F/MDD
1
6
N65P
650V N-Channel Enhancement Mode MOSFET
R
L
V
DS
V
GS
R
G
V
DD
D.U.T.
10V
Pulse Width≤ 1μs
Duty Factor
≤
0.1%
Switching Test Circuit
Switching Waveforms
Same
Type as
D.U.T.
50kΩ
12V
0.2µF
0.3µF
V
DS
V
GS
DUT
3mA
Gate Charge Test Circuit
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
The curve above is for reference only.
6
/
8
V 1.0
MDD
1
6
N
65F/MDD
1
6
N65P
650V N-Channel Enhancement Mode MOSFET
Mechanical Dimensions for TO-220
-3L
mm
NOM
4.57
SYMBOL
MIN
4.37
MAX
4.70
A
A1
A2
b
b2
c
D
D1
D2
E
E3
e
e1
H1
L
L1
ΦP
Q
1.25
2.20
0.70
1.17
0.45
15.10
8.80
5.50
9.70
7.00
1.30
2.40
0.80
1.27
0.50
15.60
9.10
–
10.00
–
2.54 BSC
5.08 BSC
6.50
1.40
2.60
0.95
1.47
0.60
16.10
9.40
–
10.30
–
6.25
12.75
–
3.40
2.60
6.85
13.80
3.40
3.80
3.00
13.50
3.10
3.60
2.80
7
/
8
V 1.0
MDD
1
6
N
65F/MDD
1
6
N65P
650V N-Channel Enhancement Mode MOSFET
Mechanical Dimensions for TO-220F
-3L
mm
SYMBOL
MIN
9.96
4.50
2.34
2.56
0.40
15.57
NOM
M
A
X
10.36
4.90
2.74
2.96
E
A
A1
A4
c
D
H1
e
10.16
4.70
2.54
2.76
0.50
15.87
6.70REF
2.54BSC
12.98
3.03
3.18
3.45
3.30
1.35
1.28
0.80
0.65
16.17
L
12.68
2.88
3.03
3.15
3.15
1.25
1.18
0.70
13.28
3.18
3.38
3.65
3.45
1.55
1.43
0.95
L1
ФP
ФP3
F3
G3
b1
b2
Package Marking and Ordering Information
Units/Reel
Part Number
Marking
Package
Units/Tube
MDD
16
N
65F
16
N
65F
TO-220F
50
MDD
16
N
65P
16
N
65P
TO-220-3L
50
8
/
8
V 1.0
