MDD-Microdiode-Electronics-MDD7N65D
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MDD7
N
65F/MDD7N65P/MDD7N65D
650V N-Channel Enhancement Mode MOSFET
TO-252
TO-220F
-3L
TO-220-3L
650 V
V
DS
I
D(Tc=25
℃
)
7
A
R
DS(on),max
Q
g,typ
1.4
Ω@V
GS
=10V
2
20.7
nC
1
1
1
3
2
2
General Features
3
3
Ultra low gate charge
Low reverse transfer Capacitance
Fast switching capability
Avalanche energy tested
Improved dv/dt capability, high ruggedness
Equivale
n
t
C
ircuit
Application
High efeciency switch mode power supplies
Electronic lamp ballasts based on half bridge
LED power supplies
Absolute Maximum Ratings (T
A
=25
℃
unless otherwise noted)
Parameter
Symbol
V
DS
Value
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
650
V
V
A
V
GS
I
D
±30
7
28
Pulsed Drain Current(Note
1
)
I
DM
A
352
7
Avalanche Energy
Single Pulsed (Note
2
)
E
AS
I
S
mJ
A
Continuous diode forward current
Diode pulse current
I
S,pulse
dv/dt
28
5
A
Peak Diode Recovery dv/dt (Note
3
)
Power Dissipation TO-220F
V/ns
W
39
P
D
Power Dissipation TO-220
/TO-252
100
W
Junction
T
e
mperature
Storage
T
e
mperature
150
℃
T
J
T
stg
-55 ~150
℃
Thermal Characteristics
Value
Parameter
Symbol
Unit
TO-220F
TO-220
/TO-252
3.2
1.25
110
Thermal resistance, Junction-to-case
Thermal resistance, Junction-to-ambient
R
θJC
R
θJA
°C/W
°C/W
62.5
Notes
:
1.
Pulse width limited by maximum junction temperature.
2.
L=10mH, I
=
8.4
A, Starting T = 25°C.
j
AS
3.
I
=
7
A, di/dt
≤
100A/us, V
≤
BV ,
Starting T = 25°C.
DD DS
j
SD
1 /
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MDD7
N
65F/MDD7N65P/MDD7N65D
650V N-Channel Enhancement Mode MOSFET
Ta = 25
℃
unless otherwise specified
Symbol
V
(BR)DSS
Parameter
Condition
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
V
GS
=0
V
,
I
D
=250μA
650
—
—
V
V
G
S
=30
V
,
V
D
S
=0V
V
G
S
=
–
30
V
,
V
D
S
=0V
V
D
S
=650
V
,
V
DS
=0V
V
DS
=VGS,
I
D
=250μA
V
GS
=10
V
,
I
D
=
3.5
A
—
—
—
—
100
–
100
1
n
A
n
A
u
A
V
Forward
Gate-Source Leakage Current
I
GSS
Reverse
I
DSS
Drain-Source Leakage Current
—
—
—
V
GS(TH)
Gate Threshold Voltage
2.0
—
4.0
1.4
1.2
Ω
R
DS(ON)
Drain-Source On-State Resistance
Dynamic Electrical Characteristics
Symbol
Parameter
Condition
Min
Typ
Max
Unit
C
iss
Input Capacitance
Output Capacitance
—
1090
pF
V
DS
=
25
V
V
GS
=0V
f
=1MHz
C
oss
C
rss
Q
g
—
—
—
—
—
111
6.1
pF
pF
nC
nC
nC
Reverse Transfer Capacitance
T
o
tal Gate Charge
20.7
5.7
—
—
—
V
DS
=520V,
V
GS
=10V,
I
D
=
7
A
Q
gs
Q
gd
Gate Source Charge
Gate Drain Charge
7.2
(Note1,2)
Switching Characteristics
Symbol
Parameter
Condition
Min
Typ
Max
Unit
—
12.2
ns
—
t
d(on)
Turn on Delay Time
V
DS
=325V,
I
D
=
7
A,
R
G
=
10
Ω (Note1,2)
—
—
—
—
—
—
33.4
53.6
15
ns
ns
ns
t
r
Turn on Rise Time
Turn Off Delay Time
Turn Off Fall Time
t
d(off)
t
f
Source Drain Diode Characteristics
Symbol
I
SD
Parameter
Source drain current(Body Diode)
Pulsed Current
Condition
Min
—
Typ
—
Max
7
Unit
A
I
S
M
V
SD
t
rr
—
—
28
A
I
S
=
7
A,
V
GS
=0V
Drain-Source Diode Forward Voltage
Body Diode Reverse Recovery Time
0.85
373.2
2.1
1.5
—
—
—
V
V
R
=
325
V
I
F
=
7
A
,
-d
i
/d
t
=100A/µs
ns
Body Diode Reverse Recovery Charge
—
Q
rr
u
C
F
—
Notes:
1.
Pulse test ; Pulse width≤300
u
s, duty cycle≤2%.
2.
Essentially independent of operating temperature.
2 /
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V 1.0
MDD7
N
65F/MDD7N65P/MDD7N65D
650V N-Channel Enhancement Mode MOSFET
Electrical Characteristics Diagrams
Figure 1. Typical Output Characteristics
Figure 2. Transfer Characteristics
V
GS
=10V
V
GS
=6V
T
c
= 25
°
C
V
GS
=7V
V
GS
=5.5V
T
c
= 150
°
C
V
DS
,Drain−source voltage (V)
V
GS
,Gate−source voltage (V)
Figure 3. On-Resistance Variation vs. Drain Current
Figure 4. Threshold Voltage vs. Temperature
V
GS
= 10 V
T
c
= 25
°
C
I
DS
=0.25 mA
Pulse test
Pulse test
I
D
,Drain current (A)
T
j
,Junction temperature (
°
C)
Figure 5. Breakdown Voltage vs. Temperature
Figure 6. On-Resistance vs.
T
emperature
V
GS
=0 V
V
GS
=10 V
I
DS
=3.5 A
Pulse test
I
DS
=0.25 mA
Pulse test
T
j
,Junction temperature (
°
C)
T
j
,Junction temperature (
°
C)
3
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MDD7
N
65F/MDD7N65P/MDD7N65D
650V N-Channel Enhancement Mode MOSFET
Figure 7. Capacitance Characteristics
Figure 8. Gate Charge Characterist
C
iss
Notes:f = 1 MHz,V
GS
=0 V
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
oss
V
DS
=480V,
I
D
= 7 A
C
rss
= C
gd
C
rss
Q
G
,Total Gate Charge (nC)
V
DS
,Drain-Source Voltage (V)
Figure 10. Maximum Safe Operating Area
TO-220/ TO-252
Figure 9. Maximum Safe Operating Area
TO-220F
100us
100us
1ms
1ms
10ms
10ms
Limited by R
DC
DC
DS(on)
Limited by R
DS(on)
Notes:
= 25
°
C
Notes:
T =
25
°
C
c
T
c
T = 150
°
C
T = 150
°
C
j
j
Single Pulse
Single Pulse
V
DS
,Drain-Source Voltage (V)
V
DS
,Drain-Source Voltage (V)
Figure 11. Power Dissipation vs. Temperature
TO-220F
Figure 12. Power Dissipation vs.
T
emperature
TO-220 / TO-252
T
c
,Case temperature (
°
C)
T
c
,Case temperature (
°
C)
4
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MDD7
N
65F/MDD7N65P/MDD7N65D
650V N-Channel Enhancement Mode MOSFET
Figure 13. Continuous Drain Current vs.
T
emperature
Figure 14. Body Diode Transfer Characteristics
T
c
= 150
°
C
T
c
= 25
°
C
V
SD
,Source-Drain Voltage (V)
T
c
,Case temperature (
°
C)
Figure 15 Transient Thermal Impendance,Junction to Case, TO-220F
P
DM
t
In descending order
Duty = t/T
D= 0.5, 0.2, 0.1, 0.05, 0.02, 0.01, single pulse
T
Z
(t)=3.2
°
C/W Max.
θJC
t ,Pulse Width (s)
Figure 16. Transient Thermal Impendance,Junction to Case, TO-220/ TO-252
In descending order
D= 0.5, 0.2, 0.1, 0.05, 0.02, 0.01, single pulse
P
DM
t
Duty = t/T
(t)=1.25
°
C/W Max.
T
Z
θJC
t ,Pulse Width (s)
5
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MDD7
N
65F/MDD7N65P/MDD7N65D
650V N-Channel Enhancement Mode MOSFET
R
L
V
DS
V
GS
R
G
V
DD
D.U.T.
10V
Pulse Width≤ 1μs
Duty Factor
≤
0.1%
Switching Test Circuit
Switching Waveforms
Same
Type as
D.U.T.
50kΩ
12V
0.2µF
0.3µF
V
DS
V
GS
DUT
3mA
Gate Charge Test Circuit
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
The curve above is for reference only.
6
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9
V 1.0
MDD7
N
65F/MDD7N65P/MDD7N65D
650V N-Channel Enhancement Mode MOSFET
Mechanical Dimensions for TO-220
mm
NOM
4.57
SYMBOL
MIN
4.37
MAX
4.70
A
A1
A2
b
b2
c
D
D1
D2
E
E3
e
e1
H1
L
L1
ΦP
Q
1.25
2.20
0.70
1.17
0.45
15.10
8.80
5.50
9.70
7.00
1.30
2.40
0.80
1.27
0.50
15.60
9.10
–
10.00
–
2.54 BSC
5.08 BSC
6.50
1.40
2.60
0.95
1.47
0.60
16.10
9.40
–
10.30
–
6.25
12.75
–
3.40
2.60
6.85
13.80
3.40
3.80
3.00
13.50
3.10
3.60
2.80
7
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9
V 1.0
MDD7
N
65F/MDD7N65P/MDD7N65D
650V N-Channel Enhancement Mode MOSFET
Mechanical Dimensions for TO-220F
mm
SYMBOL
MIN
9.96
4.50
2.34
2.56
0.40
15.57
NOM
M
A
X
10.36
4.90
2.74
2.96
E
A
A1
A4
c
D
H1
e
10.16
4.70
2.54
2.76
0.50
15.87
6.70REF
2.54BSC
12.98
3.03
3.18
3.45
3.30
1.35
1.28
0.80
0.65
16.17
L
12.68
2.88
3.03
3.15
3.15
1.25
1.18
0.70
13.28
3.18
3.38
3.65
3.45
1.55
1.43
0.95
L1
ФP
ФP3
F3
G3
b1
b2
8
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V 1.0
MDD7
N
65F/MDD7N65P/MDD7N65D
650V N-Channel Enhancement Mode MOSFET
Mechanical Dimensions for TO-252
mm
SYMBOL
MIN
2.20
0.00
0.97
0.68
5.20
0.43
5.98
NOM
2.30
–
MAX
2.38
0.20
1.17
0.90
5.46
0.61
6.22
A
A1
A2
b
b3
c
D
D1
E
E1
e
H
L2
L3
L4
θ
1.07
0.78
5.33
0.53
6.10
5.30REF
6.60
–
2.286BSC
10.10
0.51BSC
–
6.40
4.63
6.73
–
9.40
10.50
0.88
0.50
0°
1.28
1.00
8°
–
–
Package Marking and Ordering Information
Units/Reel
Part Number
Marking
Package
Units/Tube
MDD
7
N
65F
7
N
65F
TO-220F
50
MDD
7
N
65P
MDD
7
N
65D
7
N
65P
7
N
65D
TO-220-3L
TO-252
50
2500
9
/
9
V 1.0
