MDD-Microdiode-Electronics-SS8550-Y2
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S
S8550
SOT-23 Plastic-Encapsulate Transistors
S
S8550
TRANSISTOR (
P
N
P
)
SOT-23
FEATURES
z
High Collector Current
z
1.
B
A
SE
M
ARKING:
Y2
2.
E
MITTER
3.
COLLECTOR
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Collector-Base Voltage
Value
–
40
Unit
V
V
Collector-Emitter Voltage
–
25
V
Emitter-Base Voltage
–
5
Collector Current-Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction
T
e
m
perature
–
1
.
5
A
0.2
W
P
C
625
R
ΘJA
T
j
℃
/W
℃
150
Storage
T
e
m
perature
T
stg
-55
～
+150
℃
ELECTRICAL CHARACTERISTICS (T
a
= 25
℃
unless otherwise specified)
Typ
Min
Parameter
Te
st conditions
Symbol
Max
Unit
I
C
=
–
1
0
0μA, I
E
=0
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
(BR)C
BO
V
(BR)C
EO
V
(BR)E
BO
I
CBO
V
V
–
4
0
–
2
5
–
5
I
C
=
–
0.
1
mA,I
B
=0
I
E
=
–
1
00
μ
A,I
C
=0
V
V
CB
=
–
4
0
V, I
E
=0
μ
A
μ
A
μ
A
–
0.1
–
0.1
–
0.1
4
00
V
C
E
=
–
20
V, I
E
=0
Collector cut-off current
I
C
E
O
V
EB
=
–
5
V, I
C
=0
Emitter cut-off current
I
EBO
V
CE
=
–
1V, I
C
=
–
10
0mA
V
CE
=
–
1V, I
C
=
–
80
0mA
I
C
=
–
8
00mA, I
B
=
–
8
0mA
I
C
=
–
8
00mA, I
B
=
–
8
0mA
h
FE
(1)
1
2
0
DC current gain
h
FE
(
2
)
40
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
V
CE(sat)
V
BE(sat)
V
BE
V
V
V
–
0.
5
–
1
.2
–
1
V
CE
=
–
1
V, I
C
=
–
1
0mA
V
CE
=
–
10
V, I
C
=
–
5
0mA f=
30
MHz
V
C
B
=
–
10
V, I
E
=0 f=
1
MHz
Transition frequency
MHz
f
T
1
0
0
pF
Collector output capacitance
C
ob
20
CLASSIFICATION OF
h
FE
(1)
L
J
H
Rank
1
2
0-2
0
0
200
–
35
0
30
0-
4
00
Range
DN:T
21525
A0
Rev:20
2
1
A0
Page :1
S
S8550
Typical Characteristics
Fig.1
I
C
—— V
CE
Fig.2
400
P
C
—— T
a
-500
-400
-300
COMMON
EMITTER
T
a
=25
℃
I
B
=-2mA
I
B
=-1.8mA
I
B
=-1.6mA
=-1.4mA
I
B
I
B
=-1.2mA
=-1mA
=-800uA
200
I
B
-200
-100
-0
I
B
I
B
=-600uA
I
B
=-400uA
I
B
=-200uA
-2.0
0
25
50
75
100
125
150
-0.5
-1.0
-1.5 COLLECTOR-
EMITTER VOLTAGE V
CE
(V)
AMBIENT TEMPERATURE Ta ( )
℃
Fig.4
V
CEsat
—— I
C
Fig.3
C
ob
/ C
ib
—— V
CB
/
V
EB
-1000
100
10
1
f=1MHz
Ic
=0
I
=0/
E
Ta=25
℃
-100
-10
Τ
α
=25
℃
-1
β
=1
0
-0.1
0.1
-0.1
-1
-10
-20
-1
-1000 -1500
-10
-100
REVERSE BIAS VOLTAGE V (V)
I
C
, COLLECTOR CURRENT (mA)
Fig.6
V
BEsat
—— I
C
Fig.5 h
FE
–Ic
400
300
200
100
10
-1.6
-1.2
Τ
α
=25
℃
-0.8
-0.4
COMMON EMITTER
CE
=-1V
V
β
=1
0
-0
-1500
-1
-1
-10
-100
-1000 -1500
-1000
I
C
,
-10
-100
I
C
, COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
Fig.8
f
T
—— I
C
Fig.7
I
C
—— V
BE
-1500
-1000
1000
V
CE
=-10V
Ta=25
℃
-100
-10
-1
100
10
V
CE
=-1V
-0.1
0
-0
-0
.2
-0
.4
-0
.6
-0
.8
-1
.0
-1.2
-0
-50
-100
-150
I
C
, COLLECTOR CURRENT (mA)
BASE-EMMITER VOLTAGE V
BE
(V)
Rev:20
2
1
A0
Page :2
S
S8550
Outlitne Drawing
SOT-23 Package Outline Dimensions
Dimensions In Millimeters
Symbol
Min
0.9
0
0.00
0.30
0.08
2.80
1.20
2.25
1.80
0.
1
0
Typ
Max
A
A1
b
1.40
0.10
0.50
0.20
3.10
1.60
2.80
c
D
E
2.90
1.90
e
E1
e
2.00
0.50
0.55
10°
L
L1
θ
0.4
0°
Suggested Pad Layout
0.037
0.95
Note:
0.037
0.95
1.
Controlling
dimension:in/millimeters.
2. General tolerance: ±0.05mm.
3. The pad layout is for reference purposes only.
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Rev:20
2
1
A0
Page :3
S
S8550
SOT-23 Tape and Reel
Packaging Description:
SOT-23 parts are shipped in tape. The carrier
tape is made from a dissipative (carbon filled)
polycarbonate resin. The cover tape is a multilayer
film (Heat Activated Adhesive in nature) primarily
composed of polyester film,adhesive laye,sealant,
and anti-static sprayed agent.These reeled parts In
standard option are shipped with 3,000 units per 7″
or 17.8cm diameter reel. The reels are clear in color
and is made of polystyrene plastic (anti-static
coated).
3
00
0
pcs
45,00
0
pcs
4
3
8
×
4
3
8
×
220
Rev:20
2
1
A0
180,00
0
pcs
7 Inch
203×203×195
Page :4
