Me-TECH-MS3904T5-P

MS3904T5-P  

NPN

Transistor  

ROHS  

FEATURE  









Switching Transistor  

Collector-emitter voltage VCE=40V  

Collector current IC=0.2A  

M

arking:1N  

SOT-523  

ABSOLUTE MAXIMUM RATINGS (TA=25ºC, RH= 45%-75%, unl ess otherwisenoted)  

Parameter  

Symbol  

V

CEO  

V

CBO  

V

EBO  

I

C  

Value  

Unit  

V

Collector Emitter Voltage  

Collector Base Voltage  

Emitter Base Voltage  

Collector Current  

40  

60  

V

6

200  

V

mA  

mW  

℃

/W  

℃

Power Dissipation  

P

tot  

150  

833  

Thermal Resistance from Junction to Ambient  

Junction Temperature  

R

T

j  

150  

Storage Temperature Range  

T

stg  

– 55 to + 150  

℃

Parameter  

Symbol  

BV

CEO  

BV

CBO  

BV

EBO  

I

CEX  

Test Condition  

Min  

40  

60  

6

Max  

Unit  

Collector-emitter breakdown voltage  

Collector-base breakdown voltage  

Emitter-base breakdown voltage  

Collector cut-off current  

IC=1mA , IB=0  

V

V

IC=10μA ,IE=0  

IE=10μA,IC=0  

V

VCE=30V,VEB(off)=3V  

VEB=5V,IC=0  

50  

nA  

nA  

Emitter cut-off current  

I

EBO  

100  

VCE=1V,IC=0.1mA  

VCE=1V,IC=1mA  

VCE=1V,IC=10mA  

VCE=1V,IC=50mA  

IC=10mA,IB=1mA  

IC=50mA,IB=5mA  

IC=10mA,IB=1mA  

IC=50mA,IB=5mA  

VCE=20V,IC=10mA,f=100MHz  

40  

70  

DC current gain  

h

FE  

100  

60  

300  

0.2  

0.3  

V

V

Collector-emitter saturation voltage  

V

CE(sat)  

0.65  

300  

0.85  

0.95  

V

Base-emitter saturation voltage  

Transition frequency  

V

BE(sat)  

f

T  

V

MHZ  

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MS3904T5-P  

NP

N

Transistor  

ROHS  

250  

200  

15  

10  

150  

100  

50  

5

0

0.1  

0

100  

200  

1

10  

100  

T

A

, AMBIENT TEMPERATURE (°C)  

V

Fig. 1, Power Derating Curve  

Fig. 2, Input and Output Capacitance vs.  

Collector-Base Voltage  

1,000  

1

T

100  

10  

T

A

= +25°C  

T

A

= -25°C  

0.1  

V

0.01  

1

0.1  

0.1  

1

10  

1,000  

100  

1

1,000  

10  

I

C

, COLLECTOR CURRENT (mA)  

Fig. 3, Typical DC Current Gain vs. Collector Current  

100  

I

C

, COLLECTOR CURRENT (mA)  

Fig. 4, Typical Collector-Emitter  

Saturation Voltage vs. Collector Current  

10  

1

0.1  

0.1  

10  

1,000  

100  

1

I

C

, COLLECTOR CURRENT (mA)  

Fig. 5, Typical Base-Emitter  

Saturation Voltage vs. Collector Current  

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MS3904T5-P  

NP

N

Transistor  

ROHS  

PACKAGE  

Dimensions In Millimeters  

Symbol  

Min  

Max  

A

A1  

A2  

b1  

b2  

C

D

E

E1  

e

e1  

L

0.700  

0.000  

0.700  

0.150  

0.250  

0.100  

1.500  

0.700  

1.450  

0.900  

0.100  

0.800  

0.250  

0.350  

0.200  

1.700  

0.900  

1.750  

0.500 TYP  

0.400 REF  

0.900  

1.100  

L1  

θ

0.260  

0°  

0.460  

8°  

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MS3904T5-P  

NP

N

Transistor  

ROHS  

Soldering Parameters  

Reflow Condition  

Pb – Free assembly  

Temperature Min (T

s(min)  

Temperature Max (T

s(max)

)  

)

150°C  

200°C  

Pre Heat  

Time (min to max) (ts )  

60 – 190 secs  

Average ramp up rate (Liquidus Temp) (T  

L

) to peak  

5°C/second max  

5°C/second max  

Temperature (T  

L

) (Liquidus)  

217°C  

60 – 150 seconds  

260+0/-5

°

C  

Reflow  

Temperature (t  

L

)  

Time within actual peak Temperature (t  

Ramp-down Rate  

p

)

20 – 40 seconds  

5°C/second max  

8 minutes Max.  

280°C  

Time 25°C to peak Temperature (T  

Do not exceed  

P

)

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MS3904T5-P  

NP

N

Transistor  

ROHS  

Page

5

of

5  

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