Microchip-Tech-2N1613L
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TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353
(0) 65 6840044
Fax: +353 (0) 65 6822298
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/181
DEVICES
LEVELS
JAN
2N718A
2N1613
2N1613L
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS
(T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Symbol
V
CEO
V
CBO
V
EBO
I
C
Min.
30
Unit
Vdc
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
75
Vdc
7.0
500
Vdc
mAdc
TO-18 (TO-206AA)
2N718A
Total Power Dissipation
@ T
A
= +25°C
2N718A
2N1613, L
0.5
0.8
P
T
W
Total Power Dissipation
@ T
C
= +25°C
2N718A
2N1613, L
1.8
3.0
P
T
W
°C
Operating & Storage Junction Temperature Range
T
J
, T
stg
R
θ
JC
-65 to +200
Thermal Resistance, Junction-to-Case
2N718A
2N1613, L
97
58
°C/W
(1) Derate
linearly at 4.57 mW/°C for 2N1613, L and 2.85mW/°C for 2N718A for T
A
> +25°C
(2) Derate
linearly at 17.2 mW/°C for 2N1613, L and 10.3mW/°C for 2N718A for T
C
> +25°C
TO-39 (TO-205AD)
2N1613
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Symbol
Min.
Max.
Unit
Collector-Emitter Breakdown Voltage
I
C
= 100µAdc
V
(BR)CEO
V
(BR)CER
30
50
Vdc
Vdc
Collector-Emitter Breakdown Voltage
I
C
= 100µAdc, R
BE
= 10
Ω
Collector-Base Cutoff Current
10
10
η
Adc
µAdc
V
CB
= 60Vdc
I
CBO
V
CB
= 75Vdc
Emitter-Base Cutoff Current
TO-5
2N1613L
10
10
η
A dc
µAdc
V
V
EB
= 5.0Vdc
EB
= 7.0Vdc
I
EBO
T4-LDS-0200 Rev. 1 (110597)
Page 1 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353
(0) 65 6840044
Fax: +353 (0) 65 6822298
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
ON CHARACTERISTICS
(3)
Symbol
Min.
Max.
Unit
Forward-Current Transfer Ratio
I
C
= 0.1mAdc, V
CE
= 10Vdc
20
35
40
20
I
C
= 10mAdc, V
CE
= 10Vdc
I
C
= 150mAdc, V
CE
= 10Vdc
I
C
= 500mAdc, V
CE
= 10Vdc
h
FE
120
Collector-Emitter Saturation Voltage
I
C
= 150mAdc, I
B
= 15mAdc
V
CE(sat)
1.5
1.3
Vdc
Vdc
Base-Emitter Saturation Voltage
I
C
= 150mAdc, I
B
= 15mAdc
V
BE(sat)
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Magnitude of Small-Signal Forward Current Transfer Ratio
I
C
= 50mAdc, V
CE
= 10Vdc, f = 20MHz
|h
fe
|
3.0
Small-Signal Forward Current Transfer Ratio
I
C
= 1.0mAdc, V
CE
= 5Vdc, f = 1.0kHz
30
35
100
150
h
fe
I
C
= 5.0mAdc, V
CE
= 10Vdc, f = 1.0kHz
Small-Signal Short Circuit Input Impedance
I
C
= 5.0mAdc, V
CB
= 10Vdc, f = 1.0kHz
4.0
8.0
1.0
25
h
ib
h
ob
Ω
η
Ω
pF
Small-Signal Short Circuit Output Admittance
I
C
= 5.0mAdc, V
CB
= 10Vdc, f = 1.0kHz
Output Capacitance
V
CB
= 10Vdc, I
E
= 0, 100 kHz
≤
f
≤
1.0MHz
C
obo
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Turn-On Time & Turn-Off Time
(See Figure 5 of MIL-PRF-19500/181)
t
on
+ t
off
30
η
s
(3) Pulse Test: Pulse Width = 300
μ
s, Duty Cycle
≤
2.0%
T4-LDS-0200 Rev. 1 (110597)
Page 2 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353
(0) 65 6840044
Fax: +353 (0) 65 6822298
PACKAGE DIMENSIONS
Dimensions
Millimeters
Symbol
Inches
Notes
Min
.178
.170
.209
Max
Min
Max
4.95
5.33
5.84
CD
CH
HD
LC
LD
LL
LU
L
1
.195
.210
.230
4.52
4.32
5.31
.100 TP
.016
2.54 TP
5
8, 9
7, 9
4, 8, 9
9
.021
.750
.019
.050
0.41
12.70
0.41
0.53
19.05
0.48
.500
.016
1.27
L
2
.250
.028
.036
.100
6.35
0.71
.91
9
TL
TW
P
.048
.046
1.22
1.17
5
2.54
3
6
Q
.030
.010
0.76
.025
R
α
45° TP
45° TP
NOTES:
1. Dimensions
are in inches.
2. Millimeters
are given for general information only.
3. This
zone is controlled for automatic handling.
The variation in actual diameter within this zone shall not exceed .010
inch (0.254 mm).
4. (Three
leads) LU applies between L1 and L2.
LD applies between L2 and .5 inch (12.70 mm) from seating plane.
Diameter is uncontrolled in L1 and beyond .5 inch (12.70 mm) from seating plane.
5. Measured
from maximum diameter of the actual device.
6. Details
of outline in this zone optional.
7. The
collector shall be electrically connected to the case.
8. Lead
number 1 – emitter; lead number 2 – base; lead number 3 – collector.
9. All
three leads.
10. In
accordance with ANSI Y14.5M, diameters are equivalent to
Φ
x symbology.
FIGURE 1.
Physical dimensions 2N718A (TO-18).
T4-LDS-0200 Rev. 1 (110597)
Page 3 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353
(0) 65 6840044
Fax: +353 (0) 65 6822298
Dimensions
Symbol
Notes
Inches
Millimeters
Min
.240
Max
.260
Min
Max
6.60
CH
LC
LD
LL
LU
L1
L2
HD
CD
P
6.10
.200 TP
.021
5.08 TP
7
.016
.016
0.41
0.53
8, 9
See notes 12 and 13
.019
.050
0.41
0.48
1.27
8, 9
8, 9
8, 9
.250
.335
.305
.100
6.35
8.51
7.75
2.54
.370
.335
9.40
8.51
6
5
Q
.050
.010
.045
.034
1.27
0.25
1.14
0.86
r
TL
TW
α
.029
.028
0.74
0.71
4
7
45° TP
45° TP
NOTES:
1. Dimensions
are in inches.
2. Metric
equivalents are given for general information only.
3. Beyond
r (radius) maximum, TW shall be held for a minimum length of 0.011 inch (0.28 mm).
4. TL
measured from maximum HD.
5. Outline
in this zone is not controlled.
6. CD
shall not vary more than .010 inch (0.25 mm) in zone P.
This zone is controlled for automatic handling.
7. Leads
at gauge plane .054 +.001, -.000 inch (1.37 +0.03, -0.000 mm) below seating plane shall be within .007 inch (0.18
mm) radius of true position (TP) at a maximum material condition (MMC) relative to the tab at MMC.
The device may
be measured by direct methods or by the gauging procedure.
8. LU
applies between L1 and L2.
LU applies between L2 and LL minimum.
Diameter is uncontrolled in L1 and beyond
LL minimum.
9. All
three leads.
10. The
collector shall be electrically and mechanically connected to the case.
11. r
(radius) applies to both inside corners of tab.
12. For
transistor types 2N1613, dimension LL is .500 inch (12.70 mm) minimum, and .750 inch (19.05 mm) maximum.
13. For
transistor types 2N1613L, dimension LL is 1.500 inches (38.10 mm) minimum, and 1.750 inches (44.45 mm)
maximum.
14. Lead
number 1 – emitter; lead number 2 – base; lead number 3 – collector.
FIGURE 2.
Physical dimensions 2N1613 and 2N1613L (similar to TO-5 and TO-39).
T4-LDS-0200 Rev. 1 (110597)
Page 4 of 4
