Microchip-Tech-2N1893S

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Microchip-Tech-2N1893S
TECHNICAL DATA  
NPN
L
OW
P
O
W
E
R
S
I
LICON TRAN
S
I
S
T
OR  
Qualified per MI
L
–
P
RF
–
1
9500/ 182  
D
e
v
i
c
es  
Qualified
L
e
v
e
l  
JAN  
JANTX  
JANTXV  
2N1893  
2N1893S  
2N720A  
MAXIMUM RATINGS  
Ratings  
Collector-Emitter Voltage  
Symbol  
V

CEO  

V

CBO  

V

EBO  

V

CER  

I

C  

All Devices  
Units  
Vdc  
80  
Collector-Base Voltage  
120  
Vdc  
7.0  
Vdc  
Emitter-Base Voltage  
TO-18 (TO-206AA)*  
2N720A  
100  
500  
Vdc  
Collector-Emitter Voltage (R

BE

= 10
W
)  
Collector Current  
mAdc  
2N720A 2N1893,
 
S  
Total Power Dissipation  
@ T

A

= +25

0

C

(1)  

@ T

C

= +25

0

C

(2)  

0.5  
1.8  
0.8  
3.0  
W

0

C  
P

T  

Operating & Storage Junction Temperature Range  
-65 to +200  
T

J

,

T  
srg  
THERMAL CHARACTERISTICS  
Characteristics  
Symbol 2N720A
 
2N1893, S
 
Unit  
97 58  

0

C/W  
TO-5*  
2N1893, 2N1893S  
Thermal Resistance, Junction-to-Case  
R
q
JC  
1) Derate linearly 2.86 mW/

0

C for 2N720A, 4.57 mW/

0

C for 2N1893, S T

A

> 25

0

C  
2) Derate linearly 10.3 mW/

0

C for 2N720A, 17.2 mW/

0

C for 2N1893, S T

C

> 25

0

C  
*See appendix A for package  
outline  
ELECTRICAL CHARACTERISTICS (T

A

= 25

0

C unless otherwise noted)  
Characteristics  
Symbol  
Min.  
Max.  
Unit  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
I

C

= 30 mAdc  
Collector-Emitter Breakdown Voltage  
I

C

= 10 mAdc, R

BE

= 10
W
 
Collector-Base Cutoff Current  
V

CB

= 120 Vdc  
Vdc  
Vdc  
V

(BR)  

CEO  
80  
V

(BR)  

CER  
100  
m
Adc  
h
Adc  
I

CBO  

10  
10  
V

CB

= 90 Vdc  
Emitter-Base Cutoff Current  
V

EB

= 7.0 Vdc  
V

EB

= 5.0 Vdc  
m
Adc  
h
Adc  
I

EBO  

10  
10  
6 Lake Street, Lawrence, MA
 
01841  
120101  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
Page 1 of 2  

2N720A; 2N1893; 2N1893S JAN SERIES  
ELECTRICAL CHARACTERISTICS (con’t)  
Characteristics  
ON CHARACTERISTICS

(3)  

Symbol  
Min.  
Max.  
Unit  
Forward-Current Transfer Ratio  
I

C

= 0.1 mAdc, V

CE

= 10 Vdc  
I

C

= 10 mAdc, V

CE

= 10 Vdc  
I

C

= 150 mAdc, V

CE

= 10 Vdc  
Collector-Emitter Saturation Voltage  
I

C

= 150 mAdc, I

B

= 15 mAdc  
Base-Emitter Voltage  
20  
35  
40  
h

FE  

120  
5.0  
1.3  
Vdc  
Vdc  
V

CE(sat)  

V

BE(sat)  

I

C

= 150 mAdc, I

B

= 15 mAdc  
DYNAMIC CHARACTERISTICS  
Magnitude of Common Emitter Small-Signal Short-Circuit  
Forward Current Transfer Ratio  
½
h

fe

½  
I

C

= 50 mAdc, V

CE

= 10 Vdc, f = 20 MHz  
Small-Signal Short-Circuit Forward Current Transfer Ratio  
V

CE

=5.0 Vdc, I

C

= 1.0 mAdc  
V

CE

=10 Vdc, I

C

= 5.0 mAdc, f = 1.0 kHz  
Small-Signal Short-Circuit Input Impedance  
V

CB

= 10 Vdc, I

C

= 5.0 mAdc  
Small-Signal Short-Circuit Output Admittance  
V

CB

= 10 Vdc, I

C

= 5.0 mAdc  
Output Capacitance  
3.0  
10  
h

fe  

35  
45  
100  
8.0  
0.5  
15  
h

ib  

h

ob  

W
mW  
P

F  

4.0  
C

obo  

V

CB

= 10 Vdc, I

E

= 0, 100 kHz
£
f
£
1.0 MHz  
2
SWITCHING CHARACTERISTICS  
Turn-On Time + Turn-Off Time  

t

on +

t

off  
h
s  
(See Figure 3 of MIL-PRF-19500/182)  
30  
(3) Pulse Test: Pulse Width = 300
m
s, Duty Cycle
£
2.0%.  
6 Lake Street, Lawrence, MA
 
01841  
120101  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
Page 2 of 2