Microchip-Tech-2N2608

TECHNICAL DATA  

P

–

CHANNEL

J

–

FET  

Qualified per MI

L

–

P

RF

–

1

9500/ 295  

D

e

v

i

c

es  

Qualified

L

e

v

e

l  

2N2608  

JAN  

ABSOLUTE MAXIMUM RATINGS

(T

A

= +25

0

C unless otherwise noted)  

Parameters / Test Conditions  

Symbol  

V

GSS  

P

D  

T

op,

T

stg  

Value  

30  

300  

Units  

V

Gate-Source Voltage  

(1)  

Power Dissipation  

T

A

= +25

0

C  

mW  

Operating Junction & Storage Temperature Range  

(1) Derate linearly 1.71 mW/

0

C for T

A

> +25

0

C.  

-65 to +200  

TO-18  

(TO-206AA)  

*See appendix A for  

package outline  

ELECTRICAL CHARACTERISTICS

(T

A

= +25

0

C unless otherwise noted)  

PARAMETERS / TEST CONDITIONS  

Gate-Source Breakdown Voltage  

V

DS

= 0, I

G

= 1.0

m

Adc  

Gate Reverse Current  

V

DS

= 0, V

GS

= 30 Vdc  

Symbol  

V

(BR)GSS  

I

GSS  

Min.  

Max.  

Units  

Vdc  

30  

10  

h

Adc  

V

DS

= 0, V

GS

= 15 Vdc  

7.5  

Drain Current  

V

GS

= 0, V

DS

= 5.0 Vdc  

Gate-Source Cutoff Voltage  

V

DS

= 5.0 V, I

D

= 1.0

m

Adc  

I

DDSS  

-1.0  

-5.0  

6.0  

mAdc  

Vdc  

V

GS(off)  

0.75  

Magnitude of Small-Signal, Common-Source Short-Circuit Forward  

Transfer Admittance  

½

Y

fs2

½  

m

mho  

V

GS

= 0, V

DS

= 5.0 Vdc, f = 1.0 kHz  

Small-Signal, Common-Source Short-Circuit Input Capacitance  

V

GS

= 0, V

DS

= 5.0 Vdc, f = 1.0 MHz  

Common-Source Spot Noise Figure  

V

GS

= 0, V

DS

= 5.0 Vdc, f = 1.0 kHz  

B

W

= 16%, R

G

= 1.0 megohms, e

gen

= 1.82 mVdc, R

L

= 470

W  

1,000  

4,500  

10  

C

iss  

pF  

NF  

3.0  

dB  

6 Lake Street, Lawrence, MA

 

01841  

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  

120101  

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