Microchip-Tech-2N2919U-TR
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TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353
(0) 65 6840044
Fax: +353 (0) 65 6822298
NPN SILICON DUAL TRANSISTOR
Qualified per MIL-PRF-19500 /355
DEVICES
LEVELS
JAN
JANTX
JANTV
JANS
2N2919
2N2920
2N2919L
2N2920L
2N2919U
2N2920U
ABSOLUTE MAXIMUM RATINGS
(T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
60
Unit
Vdc
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
70
Vdc
6.0
30
Vdc
mAdc
One
Both
Section
1
Sections
2
P
T
200 350
mW
°C
Total Power Dissipation
@ T
A
= +25
°C
TO-78
Operating & Storage Junction Temperature Range
T
J
, T
stg
-65 to +200
NOTES:
1. Derate
linearly 1.143mW/°C for T
A
> +25°C (one section)
2. Derate
linearly 2.000mW/°C for T
A
> +25°C
(both sections)
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Symbol
Min.
Max.
Unit
Collector-Emitter Breakdown Voltage
I
C
= 10mAdc; Pulsed
V
(BR)CEO
60
Vdc
U – Package
Collector-Base Cutoff Current
V
CB
= 45Vdc
V
CB
= 70Vdc
η
Adc
μ
Adc
2.0
10
I
CBO
Emitter-Base Cutoff Current
V
EB
= 5.0Vdc
V
EB
= 6.0Vdc
2.0
10
η
Adc
μ
Adc
I
EBO
T4-LDS-0202 Rev. 1 (110638)
Page 1 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353
(0) 65 6840044
Fax: +353 (0) 65 6822298
ELECTRICAL CHARACTERISTICS (con’t)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
ON CHARACTERTICS
Forward-Current Transfer Ratio
2N2919, 2N2919L , 2N2919U
h
FE
60
100
150
240
325
600
I
C
= 10
μ
Adc, V
CE
= 5.0Vdc
I
C
= 100
μ
Adc, V
CE
= 5.0Vdc
I
C
= 1.0mAdc, V
CE
= 5.0Vdc
2N2920, 2N2920L, 2N2920U
175
235
300
600
800
1000
I
C
= 10
μ
Adc, V
CE
= 5.0Vdc
I
C
= 100
μ
Adc, V
CE
= 5.0Vdc
I
C
= 1.0mAdc, V
CE
= 5.0Vdc
h
FE
Collector-Emitter Saturation Voltage
0.3
1.0
I
C
= 1.0mAdc, I
B
= 100
μ
Adc
V
CE(sat)
Vdc
Vdc
Base-Emitter Saturation Voltage
I
C
= 1.0mAdc, I
B
= 100
μ
Adc
0.5
V
BE(sat)
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Forward Current Transfer Ratio, Magnitude
I
C
= 0.5mAdc, V
CE
= 5.0Vdc, f = 20MHz
|h
fe
|
3.0
20
Small-Signal Short Circuit Input Impedance
I
C
= 1.0mAdc, V
CE
= 5Vdc, f = 1.0kHz
h
je
3.0
30
k
Ω
Small-Signal Short Circuit Output Admittance
I
C
= 1.0mAdc, V
CE
= 5Vdc, f = 1.0kHz
60
h
oe
μ
mhos
Output Capacitance
C
obo
5.0
pF
V
CB
= 5.0Vdc, I
E
= 0, 100kHz
≤
f
≤
1.0MHz
Noise Figure
F
1
F
2
F
3
5.0
3.0
3.0
I
C
= 10
μ
Adc, V
CE
= 5Vdc, f = 100Hz, R
G
= 10k
Ω
I
C
= 10
μ
Adc, V
CE
= 5Vdc, f = 1.0kHz, R
G
= 10k
Ω
I
C
= 10
μ
Adc, V
CE
= 5Vdc, f = 10kHz, R
G
= 10k
Ω
dB
T4-LDS-0202 Rev. 1 (110638)
Page 2 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353
(0) 65 6840044
Fax: +353 (0) 65 6822298
PACKAGE DIMENSIONS
DIMENSIONS
Inches Millimeters
Min
Symbol
Notes
Max
.370
.335
.260
.041
.160
Min
Max
9.40
8.51
6.60
1.04
4.06
CD
CD1
CH
HT
LC
LC1
LD
LL
LU
L1
L2
P
.335
.305
.140
.009
.140
8.51
7.75
3.56
0.23
3.56
9
10
.200 TP
5.08 TP
.016
.016
.021
.041
0.53
See notes 10, 11 and 12
.019
.050
.041
0.48
1.27
10
10
10
8
.250
.100
6.35
2.54
Q
.050
.045
.034
.010
1.27
1.14
0.86
0.25
7
5, 6
4, 5
TL
TW
r
.029
.028
0.74
0.71
α
45°TP
45°TP
9
NOTES:
1
2
3
4
5
6
7
8
9
Dimensions are in inches.
Millimeters are given for general information only.
Tab Shown omitted.
Lead number 4 and 8 omitted on this variation.
Beyond r maximum, TW shall be held to a minimum length of .21 inch (5.33 mm)
TL shall be measured from maximum CD.
Details of outline in this zone are optional.
CD1 shall not vary more than .010 inch (0.25 mm) in zone P.
This zone is controlled for automatic handling.
Leads at gauge plane .054 – .055 inch (1.37 – 1.40 mm) below seating plane shall be within .007 inch (0.18 mm) radius of
true position (TP) at a maximum material condition (MMC) relative to the tab at MMC.
The device may be measured by
direct methods or by the gauge and gauging procedures described on gauge drawing GS-1.
10 LU
applies between L1 and L2.
LD applies between L2 and LL minimum.
Diameter is uncontrolled in L1 and beyond LL
minimum.
11 For
transistor types 2N2919 and 2N2920, LL is .500 inch (12.70 mm) minimum and .750 inch (19.05 mm) maximum.
12 For
transistor type 2N2919L and 2N2920L, LL is 1.500 inches (38.10 mm) minimum and 1.750 inches (44.45 mm)
maximum.
13 In
accordance with ASME Y14.5M, diameters are equivalent to
φ
x symbology.
FIGURE 1.
Physical dimensions 2N2919, 2N2919L, 2N2920, and 2N2920L (TO-78).
T4-LDS-0202 Rev. 1 (110638)
Page 3 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353
(0) 65 6840044
Fax: +353 (0) 65 6822298
Dimensions
Millimeters
Symbol
Inches
Min
.240
Max
.250
.250
.175
.175
.080
.039
.070
.098
.105
.055
.028
Min
6.10
Max
6.35
6.35
4.44
4.44
2.03
0.99
1.78
2.49
2.67
1.39
0.71
BL
BL2
BW
BW2
CH
.165
4.19
Pin no.
Transistor
.044
.026
.060
.082
.095
.045
.022
1.12
0.66
1.52
2.08
2.41
1.14
0.56
1
2
3
4
5
6
Collector no. 1
Base no. 1
Base no. 2
Collector no. 2
Emitter no. 2
Emitter no. 1
LH
LL1
LL2
LS1
LS2
LW
NOTES:
1
2
3
Dimensions are in inches.
Millimeters are given for general information only.
In accordance with AMSE Y14.5M, diameters are equivalent to
φ
x symbology.
FIGURE 2
. Physical
dimensions (2N2919U and 2N2920U) Surface mount.
T4-LDS-0202 Rev. 1 (110638)
Page 4 of 4
