Microchip-Tech-2N3584
| Part # | Microchip-Tech-2N3584 |
| Download | Microchip-Tech-2N3584 |
TECHNICAL DATA
NPN H
I
GH
P
O
W
E
R
S
I
LICON TRAN
S
I
S
T
OR
Qualified per MI
L
–
P
RF
–
1
9500/ 384
D
e
v
i
c
es
Qualified
L
e
v
e
l
JAN
2N3584
2N3585
JANTX
JANTXV
MAXIMUM RATINGS
Symbol
2N3585
Ratings
2N3584
250
Units
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Collector-Emitter Voltage
Collector-Base Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
300
500
400
V
CEO
V
CBO
V
CER
V
EBO
I
B
375
300
6.0
1.0
2.0
Collector Current
I
C
Total Power Dissipation
@ T
A
= +25
0
C
(1)
@ T
C
= +25
0
C
(2)
2.5
35
W
W
0
C
P
T
Operating & Storage Junction Temperature Range
-65 to +200
T
J
,
T
stg
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
0
C/W
TO-66* (TO-213AA)
Thermal Resistance, Junction-to-Case
5.0
R
q
JC
1) Derate
linearly @ 14.85 mW/
0
C for T
A
> +25
0
C
2)
Derate linearly @ 200 mW/
0
C for T
C
> +25
0
C
*See Appendix A for
Package Outline
ELECTRICAL CHARACTERISTICS (T
C
= 25
0
C unless otherwise noted)
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 10 mAdc
Symbol
Min.
Max.
Unit
Vdc
Vdc
250
300
2N3584
2N3585
V
(BR)
CEO
Collector-Base Breakdown Voltage
I
C
= 15 mAdc
375
500
2N3584
2N3585
V
(BR)
CER
Collector-Emitter Cutoff Current
V
CE
= 150 Vdc
5.0
mAdc
mAdc
I
CEO
I
CEX
Collector-Emitter Cutoff Current
V
CE
= 300 Vdc, V
BE
= 1.5 Vdc
V
CE
= 400 Vdc, V
BE
= 1.5 Vdc
Emitter-Base Cutoff Current
V
EB
= 6.0 Vdc
1.0
1.0
2N3584
2N3585
0.5
mAdc
I
EBO
6 Lake Street, Lawrence, MA
01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N3584, 2N3585 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
(3)
Forward-Current Transfer Ratio
I
C
= 1.0 Adc, V
CE
= 10 Vdc
25
40
100
h
FE
I
C
= 100 mAdc, V
CE
= 10 Vdc
Collector-Emitter Saturation Voltage
I
C
= 1.0 Adc, I
B
= 0.125 Adc
Base-Emitter Saturation Voltage
I
C
= 1.0 Adc, I
B
= 0.1 Adc
0.75
1.4
Vdc
Vdc
V
CE(sat)
V
BE(sat)
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
3.0
25
15
I
C
= 200 mAdc, V
CE
= 10 Vdc, f = 5.0 MHz
Small-Signal Short-Circuit Forward Current Transfer Ratio
I
C
= 1.0 Adc, V
CE
= 10 Vdc, f = 1.0 kHz
Output Capacitance
½
h
fe
½
h
fe
200
120
pF
V
CB
= 10 Vdc, I
E
= 0, 100 kHz
£
f
£
1.0 MHz
C
obo
SWITCHING CHARACTERISTICS
Turn-On Time
V
CC
= 30 Vdc; I
C
= 1.0 Adc; I
B
= 100 mAdc; R
C
= 29
W
Turn-Off Time
t
on
3.0
7.0
m
s
m
s
V
CC
= 30 Vdc; I
C
= 1.0 Adc; I
B
=
–
I
B
= 100 mAdc; R
C
= 29
W
t
off
SAFE OPERATING AREA
DC Tests
T
C
= +25
0
C, 1 Cycle,
t = 1.0 s
Test 1
V
CE
= 17.5 Vdc, I
C
= 2.0 Adc
Test 2
V
CE
= 100 Vdc, I
C
= 350 mAdc
Test 3
V
CE
=
250 Vdc,
I
C
= 37 mAdc
V
CE
=
300 Vdc, I
C
= 17 mAdc
2N3584
2N3585
(3) Pulse Test: Pulse Width = 300
m
s, Duty Cycle
£
2.0%.
6 Lake Street, Lawrence, MA
01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
