Microchip-Tech-2N3763L

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Microchip-Tech-2N3763L
TECHNICAL DATA  
PNP SW
I
TCHING
S
I
LICON TRAN
S
I
S
T
OR  
Qualified per MI
L
–
P
RF
–
1
9500/ 396  
D
e
v
i
c
es  
Qualified
L
e
v
e
l  
JAN  
JANTX  
JANTXV  
2N3762  
2N3762L  
2N3763  
2N3763L  
2N3764  
2N3765  
MAXIMUM RATINGS  
Ratings  
2N3762* 2N3763*  
Symbol  
Unit  
2N3764  
2N3765  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
40  
60  
Vdc  
Vdc  
V

CEO  

V

CBO  

V

EBO  

I

C  

40  
60  
TO-39* (TO-205AD)  
5.0  
1.5  
Vdc  
2N3762, 2N3763  
Adc  
2N3762*

1

2N3764

2  

2N3763*  
2N3765  
Total Power Dissipation
 
@ T

A

= +25

0

C  
Operating & Storage Junction Temp. Range  
1.0  
0.5  
W
P

T  

-55 to +200  

0

C  
T

op

,

T  
stg  
TO-5*  
THERMAL CHARACTERISTICS  
Characteristics  
2N3762L, 2N3763L  
Symbol  
Max.  
2N3762*  
2N3763*  
Unit  
2N3764  
2N3765  
88  
Thermal Resistance Junction-to-Case  
60  

0

C/W  
R
q
JC  
TO-46* (TO-206AB)  
2N3764, 2N3765  
*Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding devices  
1) Derate linearly at 5.71 mW/

0

C for T

A

> +25

0

C  
2) Derate linearly at 2.86 mW/

0

C for T

A

> +25

0

C  
*See appendix A for  
package outline  
ELECTRICAL CHARACTERISTICS (T

A

= 25

0

C unless otherwise noted)  
Characteristics  
Symbol  
Min.  
Max.  
Unit  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Current  
I

C

= 10 mAdc  
40  
60  
Vdc  
2N3762, 2N3764  
2N3763, 2N3765  
V

(BR)  

CEO  
Collector-Base Cutoff Current  
V

CB

= 20 Vdc  
V

CB

= 30 Vdc  
V

CB

= 40 Vdc  
V

CB

= 60 Vdc  
100  
100  
10  
2N3762, 2N3764  
2N3763, 2N3765  
2N3762, 2N3764  
2N3763, 2N3765  
h
Adc  
m
Adc  
I

CBO  

10  
6 Lake Street, Lawrence, MA
 
01841  
120101  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
Page 1 of 2  

2N3762, L, 2N3763, L, 2N3764, 2N3765 JAN SERIES  
ELECTRICAL CHARACTERISTICS (con’t)  
Characteristics  
Collector-Emitter Cutoff Current  
Symbol  
Min.  
Max.  
Unit  
100  
100  
h
Adc  
V

EB

= 2.0 Vdc, V

CE

= 20 Vdc  
V

EB

= 2.0 Vdc, V

CE

= 30 Vdc  
Emitter-Base Cutoff Current  
V

EB

= 2.0 Vdc  
2N3762, 2N3764  
2N3763, 2N3765  
I

CEX  

200  
10  
10  
All Types  
2N3762, 2N3764  
2N3763, 2N3765  
h
Adc  
m
Adc  
I

EBO  

V

EB

= 5.0 Vdc  
ON CHARACTERISTICS (3)  
Forward-Current Transfer Ratio  
I

C

= 10 mAdc, V

CE

= 1.0 Vdc  
I

C

= 150 mAdc, V

CE

= 1.0 Vdc  
I

C

= 500 mAdc, V

CE

= 1.0 Vdc  
I

C

= 1.0 Adc, V

CE

= 1.5 Vdc  
35  
40  
40  
30  
20  
30  
20  
140  
120  
80  
h

FE  

2N3762, 2N3764  
2N3763, 2N3765  
2N3762, 2N3764  
2N3763, 2N3765  
I

C

= 1.5 Adc, V

CE

= 5.0 Vdc  
Collector-Emitter Saturation Voltage  
I

C

= 10 mAdc, I

B

= 1.0 mAdc  
I

C

= 150 m Adc, I

B

= 15 mAdc  
I

C

= 500 mAdc, I

B

= 50 mAdc  
I

C

= 1.0 Adc, I

B

= 100 mAdc  
Base-Emitter Saturation Voltage  
I

C

= 10 mAdc, I

B

= 1.0 mAdc  
I

C

= 150 m Adc, I

B

= 15 mAdc  
I

C

= 500 mAdc, I

B

= 50 mAdc  
I

C

= 1.0 Adc, I

B

= 100 mAdc  
0.1  
0.22  
0.5  
V

CE(sat)  

Vdc  
Vdc  
0.9  
0.8  
1.0  
1.2  
1.4  
V

BE(sat)  

0.9  
DYNAMIC CHARACTERISTICS  
Forward Current Transfer Ratio, Magnitude  
I

C

= 50 mAdc, V

CE

= 10 Vdc, f = 100 MHz  
1.8  
1.5  
6.0  
6.0  
2N3762, 2N3764  
2N3763, 2N3765  
½
h

fe

½  
Output Capacitance  
V

CB

= 10 Vdc, I

E

= 0, 100 kHz
£
f
£
1.0 MHz  
Input Capacitance  
25  
80  
pF  
pF  
C

obo  

C

ibo  

V

EB

= 0.5 Vdc, I

C

= 0, 100 kHz
£
f
£
1.0 MHz  
SWITCHING CHARACTERISTICS  
V

CC

= 30 Vdc, V

EB

= 0,  

t

d  

t

r  

t

s  

t

f  
Delay Time  
8.0  
35  
80  
35  
h
s  
h
s  
h
s  
h
s  
Rise Time  
I

C

= 1.0 mAdc, I

B1

= 100 mAdc  
Storage Time  
V

CC

= 30 Vdc, V

EB

= 0,  
Fall Time  
I

C

= 1.0 mAdc, I

B1

= 100 mAdc  
(3) Pulse Test: Pulse Width = 300
m
s, Duty Cycle
£
2.0%.  
6 Lake Street, Lawrence, MA
 
01841  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
120101  
Page 2 of 2