Microchip-Tech-2N3764
| Part # | Microchip-Tech-2N3764 |
| Download | Microchip-Tech-2N3764 |
TECHNICAL DATA
PNP SW
I
TCHING
S
I
LICON TRAN
S
I
S
T
OR
Qualified per MI
L
–
P
RF
–
1
9500/ 396
D
e
v
i
c
es
Qualified
L
e
v
e
l
JAN
JANTX
JANTXV
2N3762
2N3762L
2N3763
2N3763L
2N3764
2N3765
MAXIMUM RATINGS
Ratings
2N3762* 2N3763*
Symbol
Unit
2N3764
2N3765
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
40
60
Vdc
Vdc
V
CEO
V
CBO
V
EBO
I
C
40
60
TO-39* (TO-205AD)
5.0
1.5
Vdc
2N3762, 2N3763
Adc
2N3762*
1
2N3764
2
2N3763*
2N3765
Total Power Dissipation
@ T
A
= +25
0
C
Operating & Storage Junction Temp. Range
1.0
0.5
W
P
T
-55 to +200
0
C
T
op
,
T
stg
TO-5*
THERMAL CHARACTERISTICS
Characteristics
2N3762L, 2N3763L
Symbol
Max.
2N3762*
2N3763*
Unit
2N3764
2N3765
88
Thermal Resistance Junction-to-Case
60
0
C/W
R
q
JC
TO-46* (TO-206AB)
2N3764, 2N3765
*Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding devices
1) Derate linearly at 5.71 mW/
0
C for T
A
> +25
0
C
2) Derate linearly at 2.86 mW/
0
C for T
A
> +25
0
C
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
I
C
= 10 mAdc
40
60
Vdc
2N3762, 2N3764
2N3763, 2N3765
V
(BR)
CEO
Collector-Base Cutoff Current
V
CB
= 20 Vdc
V
CB
= 30 Vdc
V
CB
= 40 Vdc
V
CB
= 60 Vdc
100
100
10
2N3762, 2N3764
2N3763, 2N3765
2N3762, 2N3764
2N3763, 2N3765
h
Adc
m
Adc
I
CBO
10
6 Lake Street, Lawrence, MA
01841
120101
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Page 1 of 2
2N3762, L, 2N3763, L, 2N3764, 2N3765 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Collector-Emitter Cutoff Current
Symbol
Min.
Max.
Unit
100
100
h
Adc
V
EB
= 2.0 Vdc, V
CE
= 20 Vdc
V
EB
= 2.0 Vdc, V
CE
= 30 Vdc
Emitter-Base Cutoff Current
V
EB
= 2.0 Vdc
2N3762, 2N3764
2N3763, 2N3765
I
CEX
200
10
10
All Types
2N3762, 2N3764
2N3763, 2N3765
h
Adc
m
Adc
I
EBO
V
EB
= 5.0 Vdc
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
I
C
= 10 mAdc, V
CE
= 1.0 Vdc
I
C
= 150 mAdc, V
CE
= 1.0 Vdc
I
C
= 500 mAdc, V
CE
= 1.0 Vdc
I
C
= 1.0 Adc, V
CE
= 1.5 Vdc
35
40
40
30
20
30
20
140
120
80
h
FE
2N3762, 2N3764
2N3763, 2N3765
2N3762, 2N3764
2N3763, 2N3765
I
C
= 1.5 Adc, V
CE
= 5.0 Vdc
Collector-Emitter Saturation Voltage
I
C
= 10 mAdc, I
B
= 1.0 mAdc
I
C
= 150 m Adc, I
B
= 15 mAdc
I
C
= 500 mAdc, I
B
= 50 mAdc
I
C
= 1.0 Adc, I
B
= 100 mAdc
Base-Emitter Saturation Voltage
I
C
= 10 mAdc, I
B
= 1.0 mAdc
I
C
= 150 m Adc, I
B
= 15 mAdc
I
C
= 500 mAdc, I
B
= 50 mAdc
I
C
= 1.0 Adc, I
B
= 100 mAdc
0.1
0.22
0.5
V
CE(sat)
Vdc
Vdc
0.9
0.8
1.0
1.2
1.4
V
BE(sat)
0.9
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio, Magnitude
I
C
= 50 mAdc, V
CE
= 10 Vdc, f = 100 MHz
1.8
1.5
6.0
6.0
2N3762, 2N3764
2N3763, 2N3765
½
h
fe
½
Output Capacitance
V
CB
= 10 Vdc, I
E
= 0, 100 kHz
£
f
£
1.0 MHz
Input Capacitance
25
80
pF
pF
C
obo
C
ibo
V
EB
= 0.5 Vdc, I
C
= 0, 100 kHz
£
f
£
1.0 MHz
SWITCHING CHARACTERISTICS
V
CC
= 30 Vdc, V
EB
= 0,
t
d
t
r
t
s
t
f
Delay Time
8.0
35
80
35
h
s
h
s
h
s
h
s
Rise Time
I
C
= 1.0 mAdc, I
B1
= 100 mAdc
Storage Time
V
CC
= 30 Vdc, V
EB
= 0,
Fall Time
I
C
= 1.0 mAdc, I
B1
= 100 mAdc
(3) Pulse Test: Pulse Width = 300
m
s, Duty Cycle
£
2.0%.
6 Lake Street, Lawrence, MA
01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
