Microchip-Tech-2N4240

7516 Central Industrial Drive  

Riviera Beach, Florida  

33404  

PHONE: (561) 842-0305  

FAX: (561) 845-7813  

2N4240  

APPLICATIONS:  

·

·

·

Off-Line Inverters  

Switching Regulators  

Motor Controls  

·

·

·

Deflection Circuits  

DC-DC Converters  

High Voltage Amplifiers  

5 Amp, 500V,  

High Voltage  

NPN Silicon Power  

Transistors  

FEATURES:  

·

·

·

High Voltage: 250 to 500V  

·

·

High Current: 2 Amps  

Low V

CE (SAT)  

Fast Switching: t

f

< 3

m

sec.  

High Power:

 

35 Watts  

DESCRIPTION:  

These power transistors are produced by PPC’s DOUBLE  

DIFFUSED PLANAR process.

 

This technology produces high  

voltage devices with excellent switching speeds, frequency  

response, gain linearity, saturation voltages, high current gain,  

and safe operating areas.

 

They are intended for use in  

Commercial, Industrial, and Military power switching, amplifier,  

and regulator applications.  

Ultrasonically bonded leads and controlled die mount  

techniques are utilized to further increase the SOA capability  

and inherent reliability of these devices.

 

The temperature  

range to 200

°

C permits reliable operation in high ambients, and  

the hermetically sealed package insures maximum reliability  

and long life.  

TO-66  

ABSOLUTE MAXIMUM RATINGS:  

SYMBOL  

CHARACTERISTIC  

VALUE  

UNITS  

Volts  

Volts  

Volts  

Volts  

Amps  

Amps  

Amps  

°

C  

V

CBO  

*

Collector-Base Voltage  

500  

300  

V

CEO  

*

Collector-Emitter Voltage  

Collector-Emitter Voltage

 

R

BE

= 50

W  

Emitter-Base Voltage  

V

CER  

*

400  

V

EBO  

*

6

I

C

*  

Peak Collector Current  

5

I

C

*  

Continuous Collector Current  

Base Current  

2

1

I

B

*  

T

STG  

T

J

*  

*

*

Storage Temperature  

Operating Junction Temperature  

Lead Temperature 1/16″ from Case for 10 Sec.  

-65 to 200  

-65 to 200  

235  

°

C  

°

C  

P

T

*  

Power Dissipation  

T

C

= 25

°

C  

35  

5.0  

Watts  

°

C/W  

q

JC  

Thermal Impedance  

*

Indicates JEDEC registered data.  

MSC1058.PDF 05-19-99  

2N4240  

ELECTRICAL CHARACTERISTICS:  

(25

°

Case Temperature Unless Otherwise Noted)  

VALUE  

SYMBOL  

CHARACTERISTIC  

TEST CONDITIONS  

Units  

Volts  

Min.  

300  

Max.  

—-  

V

CEO(sus)

*  

Collector-Emitter  

Sustaining Voltage  

Collector-Emitter  

Sustaining Voltage  

I

C

= 0.2 Amp

 

(Notes

è

and 2)  

V

CER(sus)  

400  

—-  

Volts  

I

C

= 0.2A, R

BE

= 50

W

(Notes 1 and 2)  

I

CEV*  

I

CEV  

V

CE

= 450V,

 

V

BE

= -1.5V  

V

CE

= 300V,

 

V

BE

= -1.5V  

—-  

—-  

2.0  

5.0  

mA.  

mA.  

Collector Cutoff Current  

*

Collector Cutoff Current  

T

C

= 150

°

C  

I

CEO*  

I

EB0*  

h

FE

*  

Collector Cutoff Current  

V

CE

= 150V,

 

I

B

= 0  

V

EB

= 6V,

 

I

C

= 0  

—-  

—-  

5.0  

0.5  

mA.  

mA.  

Emitter Cutoff Current  

DC Forward Current  

Transfer Ratio  

(Note 1)  

I

C

= 0.1A,

 

V

CE

= 10V  

I

C

= 0.75A,

 

V

CE

= 10V  

I

C

= 0.75A,

 

V

CE

= 2V  

40  

30  

10  

—-  

150  

100  

—-  

—-  

—-  

V

CE(sat)  

V

BE(sat)  

I

S/b  

*

Collector-Emitter  

Saturation Voltage  

(Note 1)  

Base-Emitter Saturation  

Voltage (Note 1)  

I

C

= 0.75A, I

B

= .075A  

I

C

= 0.75A, I

B

= .075A  

V

CE

= 100V,

 

t = 1.0sec.  

—-  

—-  

0.35  

50  

1.0  

1.8  

—-  

—-  

—-  

—-  

120  

Volts  

Volts  

A

*

Second-Breakdown  

Collector Current (with  

base forward biased)  

Second-Breakdown  

Energy (with base  

reverse biased)  

Common-Emitter Small-  

Signal Forward Current  

Transfer Ratio  

Common-Emitter Small-  

Signal Forward Current  

Transfer Ratio, f = 5 MHz  

Collector-Base  

E

S/b  

V

EB

= 4V,

 

R

BE

= 20

W

, L = 100

m

h  

V

CE

= 10V, I

C

= 0.2A, f = 5 MHz  

V

CE

= 10V, I

C

= 0.2A  

m

J  

—-  

—-  

pf  

h

fe

*  

3

I

h

fe

I

*  

3.0  

—-  

C

Ob  

V

CB

= 10V,

 

I

E

= 0,

 

f = 1.0MHz  

Capacitance  

tr*  

ts*  

tf*  

Rise Time  

I

C

= .75A, I

B

2

= .075A  

—-  

—-  

—-  

.05  

6.0  

3.0  

m

sec.  

m

sec.  

m

sec.  

Storage Time  

Fall Time  

I

C

= .75A, I

B

1

= I

B

2

= .075A  

I

C

= .75A, I

B

1

= I

B

2

= .075A  

Note 1:

 

Pulse Test: Pulse width = 300

m

Sec., Rep. Rate 60Hz.  

Note 2:

 

Caution – Do not use Curve Tracer.  

* Indicates JEDEC registered data.  

MSC1058.PDF 05-19-99  

2N4240  

PACKAGE MECHANICAL DATA:  

R.145 [3.68] MAX  

.360 [9.14] MIN  

SEATING PLANE  

.050 [1.27]  

.075 [1.91]  

.095 [2.41]  

.105 [2.67]  

.620 [15.75] MAX  

.470 [11.94]  

.500 [12.70]  

.958 [24.33]  

.962 [24.43]  

2

1

.570 [14.48]  

.590 [14.99]  

.050 [1.27] MAX  

.190 [4.83]  

.210 [5.33]  

.250 [6.35]  

.340 [8.64]  

.142 [3.61]  

.152 [3.86]  

.028 [0.71]  

.034 [0.86]  

R.350 [8.89] MAX  

NOTE: DIMENSIONS IN [

 

] = MILLIMETERS  

MSC1058.PDF 05-19-99