Microchip-Tech-2N4449
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TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/317
DEVICES
LEVELS
2N2369A
2N2369AU
2N2369AUA
2N2369AUB
2N2369AUBC *
2N4449
JAN
JANTX
JANTXV
JANS
*
Available to JANS quality level only.
ABSOLUTE MAXIMUM RATINGS
(T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Unit
2N2369A / U / UA
2N4449 / UB / UBC
15
20
Collector-Emitter Voltage
Emitter-Base Voltage
V
CEO
Vdc
2N2369A / U / UA
2N4449 / UB / UBC
4.5
6.0
TO-18 (TO-206AA)
2N2369A
V
EBO
Vdc
Collector-Base Voltage
V
CBO
I
CES
40
40
Vdc
Vdc
Collector-Emitter Voltage
Total Power Dissipation @
T
A
= +25°C
2N2369A; 2N4449
UA, UB, UBC
U
0.36
(1)
0.36
(1, 5)
0.50
(4)
P
T
W
TO-46 (TO-206AB)
2N4449
Operating & Storage Junction Temperature Range
T
op
, T
stg
-65 to +200
°C
THERMAL CHARACTERISTICS
Parameters / Test Conditions
Symbol
Value
Unit
Thermal Resistance, Ambient-to-Case
2N2369A; 2N4449
UA, UB, UBC
U
400
400
(5)
350
°C/W
R
θ
JA
SURFACE MOUNT
UA
Note:
1. Derate
linearly 2.06 mW°/C above T
A
= +25°C.
2. Derate
linearly 4.76 mW°/C above T
C
= +95°C.
3. Derate
linearly 3.08 mW°/C above T
C
= +70°C.
4. Derate
linearly 3.44 mW°/C above T
A
= +54.5°C.
5. Mounted
on FR-4 PCB (1Oz. Cu) with contacts 20 mils larger than package pads.
SURFACE MOUNT
UB & UBC
(UBC = Ceramic Lid Version)
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Symbol
Min.
Max.
Unit
Collector-Emitter Breakdown Voltage
I
C
= 10mAdc
V
(BR)CEO
I
CES
15
Vdc
SURFACE MOUNT
U (Dual Transistor)
Collector-Base Cutoff Current
V
CE
= 20Vdc
0.4
μ
Adc
T4-LDS-0057 Rev. 2 (081394)
Page 1 of 2
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/317
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERISTICS
Emitter-Base Breakdown Voltage
V
EB
= 4.5Vdc
Symbol
Min.
Max.
Unit
10
I
EBO
μ
Adc
Emitter-Base Cutoff Current
V
EB
= 4.0Vdc
0.25
Collector- Base Breakdown Voltage
V
CB
= 40Vdc
10
I
CBO
μ
Adc
Collector-Base Cutoff Current
V
CB
= 32Vdc
0.2
ON CHARACTERISTICS
(1)
Forward-Current Transfer Ratio
I
C
= 10mAdc, V
CE
= 0.35Vdc
I
C
= 30mAdc, V
CE
= 0.4Vdc
I
C
= 10mAdc, V
CE
= 1.0Vdc
I
C
= 100mAdc, V
CE
= 1.0Vdc
40
30
40
20
120
120
120
120
h
FE
Collector-Emitter Saturation Voltage
I
C
= 10mAdc, I
B
= 1.0mAdc
I
C
= 30mAdc, I
B
= 3.0mAdc
I
C
= 100mAdc, I
B
= 10mAdc
0.20
0.25
0.45
V
CE(sat)
Vdc
Vdc
Base-Emitter Saturation Voltage
I
C
= 10mAdc, I
B
= 1.0mAdc
I
C
= 30mAdc, I
B
= 3.0mAdc
I
C
= 100mAdc, I
B
= 10mAdc
0.70
0.80
0.85
0.90
1.20
V
BE(sat)
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Forward Current Transfer Ratio
I
C
= 10mAdc, V
CE
= 10Vdc, f = 100MHz
|h
fe
|
5.0
10
Output Capacitance
C
obo
C
ibo
4.0
5.0
pF
pF
V
CB
= 5.0Vdc, I
E
= 0, 100kHz
≤
f
≤
1.0MHz
Input Capacitance
V
EB
= 0.5Vdc, I
C
= 0, 100kHz
≤
f
≤
1.0MHz
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Turn-On Time
I
C
= 10mAdc; I
B1
= 3.0mAdc, I
B2
= -1.5mAdc
t
on
12
η
s
Turn-Off Time
I
C
= 10mAdc; I
B1
= 3.0mAdc, I
B2
= -1.5mAdc
t
off
t
S
18
13
η
s
η
s
Charge Storage Time
I
C
= 10mAdc; I
B1
= 10mAdc, I
B2
= 10mAdc
(1) Pulse Test: Pulse Width = 300
μ
s, Duty Cycle
≤
2.0%.
T4-LDS-0057 Rev. 2 (081394)
Page 2 of 2
