Microchip-Tech-2N4930
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TECHNICAL DATA
PNP H
I
GH VOLTAGE
S
I
LICON TRAN
S
I
S
T
OR
Qualified per MI
L
–
P
RF
–
1
9500/ 397
D
e
v
i
c
es
Qualified
L
e
v
e
l
JAN, JANTX
JANTXV
2N3743
2N4930
2N4931
MAXIMUM RATINGS
Ratings
Sym 2N3743
2N4930 2N4931
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
300
200
200
5.0
250
Vdc
V
CEO
V
CBO
V
EBO
I
C
300
250
Vdc
Vdc
200
mAdc
Total Power Dissipation
@T
A
= +25
0
C
1
@T
C
= +25
0
C
2
1.0
5.0
W
W
0
C
P
T
Operating & Storage Junction Temperature Range
-65 to +200
T
J
,
T
TO-39*
stg
(TO-205AD)
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
35
Unit
0
C/W
Thermal Resistance Junction-to-Case
R
q
JC
1) Derate
linearly 5.71 mW/
0
C for T
A
> +25
0
C
2)
Derate linearly 28.6 mW/
0
C for T
C
> +25
0
C
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
C
= 25
0
C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 1.0 mAdc
300
200
250
2N3743
2N4930
2N4931
Vdc
V
(BR)
CEO
Collector-Emitter Breakdown Voltage
300
200
250
I
C
= 100
m
Adc
2N3743
2N4930
2N4931
Vdc
Vdc
V
(BR)
CBO
Emitter-Base Breakdown Voltage
I
E
= 100
m
Adc
5.0
V
(BR)
EBO
Collector-Base Cutoff Current
V
CB
= 250 Vdc
V
CB
= 150 Vdc
250
250
250
2N3743
2N4930
2N4931
I
CBO
h
Adc
V
CB
= 200 Vdc
6 Lake Street, Lawrence, MA
01841
120101
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Page 1 of 2
2N3743, 2N4930, 2N4931, JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Emitter-Base Cutoff Current
Symbol
Min.
Max.
Unit
150
I
EBO
h
Adc
V
EB
= 4.0 Vdc
ON CHARACTERISTICS
(3)
Forward-Current Transfer Ratio
I
C
= 0.1 mAdc, V
CE
= 10 Vdc
I
C
= 1.0 mAdc, V
CE
= 10 Vdc
I
C
= 10 mAdc, V
CE
= 10 Vdc
I
C
= 30 mAdc, V
CE
= 10 Vdc
I
C
= 50 mAdc, V
CE
= 20 Vdc
Collector-Emitter Saturation Voltage
I
C
= 30 mAdc, I
B
= 3.0 mAdc
I
C
= 10 mAdc, I
B
= 1.0 mAdc
Base-Emitter Saturation Voltage
I
C
= 10 mAdc, I
B
= 1.0 mAdc
I
C
= 30 mAdc, I
B
= 3.0 mAdc
30
40
40
50
30
h
FE
200
1.2
1.0
Vdc
Vdc
V
CE(sat)
1.0
1.2
V
BE(sat)
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
I
C
= 10 mAdc, V
CE
= 20 Vdc, f = 20 MHz
Small-Signal Short-Circuit Forward Current Transfer Ratio
I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz
Output Capacitance
V
CB
= 20 Vdc, I
E
= 0, f
³
0.1 MHz
Input Capacitance
V
EB
= 1.0 Vdc, I
C
= 0, f
³
0.1 MHz
2.0
30
8.0
½
h
fe
½
300
15
h
fe
pF
pF
C
obo
C
ibo
400
SAFE OPERATING AREA
DC Tests
T
C
= +25
0
C, 1 Cycle, t
³
1.0 s
Test 1
V
CE
= 20 Vdc, I
C
= 50 mAdc
Test 2
V
CE
= 100 Vdc, I
C
= 10 mAdc
Test 3
All Types
All Types
V
CE
= 300 Vdc, I
C
= 3.3 mAdc
V
CE
= 200 Vdc, I
C
= 5.0 mAdc
V
CE
= 250 Vdc, I
C
= 4.0 mAdc
2N3743
2N4930
2N4931
(3) Pulse Test: Pulse Width = 300
m
s, Duty Cycle
£
2.0%.
6 Lake Street, Lawrence, MA
01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
