Microchip-Tech-2N5151
| Part # | Microchip-Tech-2N5151 |
Download  | Microchip-Tech-2N5151 |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
PNP POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/545
DEVICES
LEVELS
JAN
2N5151
2N5153
JANTX
JANTXV
JANS
2N5151L
2N5151U3
2N5153L
2N5153U3
ABSOLUTE MAXIMUM RATINGS
(T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Unit
Collector-Emitter Voltage
V
CEO
V
CBO
V
EBO
I
C
80
100
5.5
2.0
Vdc
Vdc
Vdc
Adc
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
2N5151, 2N5153, L
2N5151, 2N5153, L
2N5151U3, 2N5153U3
2N5151U3, 2N5153U3
@ T
A
= +25°C
(1)
@ T
C
= +25°C
(2)
@ T
A
= +25°C
(3)
@ T
C
= +25°C
(4)
1.0
10
1.16
100
TO-5
2N5151L, 2N5153L
(See Figure 1)
P
T
W
Operating & Storage Junction Temperature Range
T
J
, T
stg
R
θ
JC
-65 to +200
°C
10
1.75 (U3)
Thermal Resistance, Junction-to Case
°C/W
Note:
1) Derate
linearly 5.7mW/°C for T
A
> +25°
2) Derate
linearly 66.7mW/°C for T
A
> +25°
3) Derate
linearly 6.63mW/°C for T
A
> +25°
4) Derate
linearly 571mW/°C for T
A
> +25°
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
TO-39 (TO-205AD)
2N5151, 2N5153
Parameters / Test Conditions
OFF CHARACTERTICS
Symbol
V
(BR)CEO
I
EBO
Min.
Max.
Unit
Collector-Emitter Breakdown Voltage
I
C
= 100mAdc, I
B
= 0
80
Vdc
Emitter-Base Cutoff Current
V
EB
= 4.0Vdc, I
C
= 0
1.0
1.0
µAdc
mAdc
V
EB
= 5.5Vdc, I
C
= 0
Collector-Emitter Cutoff Current
V
CE
= 60Vdc, V
BE
= 0
I
CES
1.0
1.0
µAdc
mAdc
U-3
V
CE
= 100Vdc, V
BE
= 0
2N5151U3, 2N5153U3
Collector-Base Cutoff Current
I
CEO
50
µAdc
V
CE
= 40Vdc, I
B
= 0
T4-LDS-0132 Rev. 1 (091476)
Page 1 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
PNP POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/545
ELECTRICAL CHARACTERISTICS
Parameters / Test Conditions
ON CHARACTERTICS
Symbol
Min.
Max.
Unit
Forward-Current Transfer Ratio
I
C
= 50mAdc, V
CE
= 5Vdc
2N5151
2N5153
20
50
I
C
= 2.5Adc, V
CE
= 5Vdc
2N5151
2N5153
30
70
90
200
h
FE
I
C
= 5Adc, V
CE
= 5Vdc
2N5151
2N5153
20
40
Collector-Emitter Saturation Voltage
I
C
= 2.5Adc, I
B
= 250mAdc
I
C
= 5.0Adc, I
B
= 500mAdc
0.75
1.5
V
CE(sat)
Vdc
Vdc
Vdc
Base-Emitter Voltage Non-Saturation
I
C
= 2.5Adc, V
CE
= 5Vdc
V
BE
1.45
Base-Emitter Saturation Voltage
I
C
= 2.5Adc, I
B
= 250mAdc
I
C
= 5.0Adc, I
B
= 500mAdc
1.45
2.2
V
BE(sat)
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
I
C
= 500mAdc, V
CE
= 5Vdc, f = 10MHz
2N5151
2N5153
6
7
|h
fe
|
Common-Emitter Small-Signal Short-Circuit.
Forward-Current Transfer Ratio
h
fe
I
C
= 100mAdc, V
CE
= 5Vdc, f = 1kHz
2N5151
2N5153
20
50
Output Capacitance
C
obo
250
pF
V
CB
= 10Vdc, I
E
= 0, f = 1.0MHz
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Turn-On Time
I
C
= 5Adc, I
B1
= 500mAdc
I
B2
= -500mAdc
R
L
= 6
Ω
t
on
0.5
μ
s
V
BE(OFF)
= 3.7Vdc
Turn-Off Time
I
C
= 5Adc, I
B1
= 500mAdc
I
B2
= -500mAdc
R
L
= 6
Ω
t
off
1.5
μ
s
V
BE(OFF)
= 3.7Vdc
T4-LDS-0132 Rev. 1 (091476)
Page 2 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
PNP POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/545
SWITCHING CHARACTERISTICS (cont.)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
I
C
= 5Adc, I
B1
= 500mAdc
Storage Time
t
s
1.4
μ
s
I
B2
= -500mAdc
R
L
= 6
Ω
BE(OFF)
= 3.7Vdc
Fall Time
t
f
0.5
μ
s
V
SAFE OPERATING AREA
DC Tests
T
C
= +25°C, 1 Cycle, t
P
= 1.0s
Test 1
V
CE
= 5.0Vdc, I
C
= 2.0Adc
Test 2
V
CE
= 32Vdc, I
C
= 310mAdc
Test 3
V
CE
= 80Vdc, I
C
= 14.5mAdc
FIGURE 1 (TO-5, TO-39)
PACKAGE DIMENSIONS
Dimensions
Symbol
Inches
Min Max
Millimeters
Min Max
CD
CH
HD
LC
LD
LL
.305 .335 7.75 8.51
.240 .260 6.10 6.60
.335 .370 8.51 9.40
.200 TP
5.08 TP
.016 .021 0.41 0.53
See notes 8, 9, 12, 13
LU
L
1
.016 .019 0.41 0.48
.050
1.27
L
2
.250
6.35
Q
.050
1.27
TL
.029 .045 0.74 1.14
.028 .034 0.71 0.86
TW
r
.010
45° TP
.100
0.25
45° TP
2.54
α
P
T4-LDS-0132 Rev. 1 (091476)
Page 3 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
PNP POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/545
NOTES:
1
2
3
4
5
6
7
Dimensions are in inches.
Millimeters are given for general information only.
Beyond r (radius) maximum, TW shall be held for a minimum length of .011 inch (0.28 mm).
TL measured from maximum HD.
Outline in this zone is not controlled.
CD shall not vary more than .010 inch (0.25 mm) in zone P.
This zone is controlled for automatic handling.
Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within.007 inch (0.18 mm)
radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC.
LU applied between L1 and L2. LD applies between L2 and LL minimum.
Diameter is uncontrolled in L1 and beyond LL
minimum.
8
9
All three leads.
10 The
collector shall be electrically and mechanically connected to the case.
11 r
(radius) applies to both inside corners of tab.
12 In
accordance with ASME Y14.5M, diameters are equivalent to
φ
x symbology.
13 For
transistor types 2N5151 and 2N5153, LL is .5 inch (13 mm) minimum, and .75 inch (19 mm) maximum.
14 For
transistor types 2N5151L and 2N5153L, LL is 1.5 inch (38 mm) minimum and 1.75 inch (44.4 mm) maximum.
15 Lead
designation, depending on device type, shall be as follows: lead numbering; lead 1 = emitter, lead 2 = base, and lead 3 =
collector.
FIGURE 2 (U3)
PACKAGE DIMMENSIONS
Dimensions
Symbol
Inches
Millimeters
Min
Min
.395
.291
.1085
.010
.220
.115
Max
.405
.301
.1205
.020
.230
.125
Max
10.28
7.64
BL
BW
CH
10.04
7.40
2.76
0.25
5.59
2.93
3.06
LH
0.51
LL1
LL2
LS1
LS2
LW1
LW2
Q1
5.84
3.17
.150 BSC
.075 BSC
.281
3.81 BSC
1.91 BSC
7.39
.291
.100
7.14
2.29
.090
2.54
.030
0.762
0.762
Q2
.030
NOTES:
1
2
3
Dimensions are in inches.
Millimeters are given for general information only.
Terminal 1 – collector, terminal 2 – base, terminal 3 – emitter
T4-LDS-0132 Rev. 1 (091476)
Page 4 of 4
