Microchip-Tech-2N5582

TECHNICAL DATA  

NPN S

I

LICON

S

W

I

TCHING TRAN

S

I

S

T

OR  

Qualified per MI

L

–

P

RF

–

1

9500/ 423  

D

e

v

i

c

es  

Qualified

L

e

v

e

l  

JAN  

2N5581  

2N5582  

JANTX  

JANTXV  

MAXIMUM RATINGS  

Ratings  

Symbol  

Value  

50  

Unit  

Vdc  

Vdc  

Vdc  

mAdc  

W

Collector-Emitter Voltage  

Collector-Base Voltage  

Emitter-Base Voltage  

Collector Current  

V

CEO  

V

CBO  

V

EBO  

I

C  

75  

6.0  

800  

Total Power Dissipation  

@ T

A

= 25

0

C

(1)  

@ T

C

= 25

0

C

(2)  

0.5  

2.0  

P

T  

W

TO-46*  

(TO-206AB)  

Operating & Storage Junction Temperature Range  

-55 to +200  

T

op

,

T  

stg  

1) Derate linearly 2.86 mW/

0

C for T

A

> 25

0

C  

2) Derate linearly 11.43 mW/

0

C for T

C

> 25

0

C  

*See appendix A for  

package outline  

ELECTRICAL CHARACTERISTICS (T

A

= 25

0

C unless otherwise noted)  

Characteristics  

Symbol  

Min.  

Max.  

Unit  

OFF CHARACTERISTICS  

Collector-Emitter Breakdown Voltage  

I

C

= 10 mAdc  

50  

Vdc  

V

(BR)  

CEO  

Collector-Base Cutoff Current  

V

CB

= 60 Vdc  

V

CB

= 75 Vdc  

I

CBO  

h

Adc  

m

Adc  

10  

10  

Emitter-Base Cutoff Current  

V

EB

= 4.0Vdc  

V

EB

= 6.0Vdc  

I

EBO  

h

Adc  

m

Adc  

10  

10  

6 Lake Street, Lawrence, MA

 

01841  

120101  

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  

Page 1 of 2  

2N5581, 2N5582 JAN SERIES  

ELECTRICAL CHARACTERISTICS (con’t)  

Characteristics  

ON CHARACTERISTICS

(3)  

Symbol  

Min.  

Max.  

Unit  

Forward-Current Transfer Ratio  

I

C

= 0.1 mAdc, V

CE

= 10 Vdc  

I

C

=1.0 m Adc, V

CE

= 10 Vdc  

I

C

= 10 mAdc, V

CE

= 10 Vdc  

I

C

= 150 mAdc, V

CE

= 10 Vdc  

I

C

= 500 mAdc, V

CE

= 10 Vdc  

2N5581  

30  

35  

40  

40  

20  

h

FE  

120  

300  

I

C

= 0.1 mAdc, V

CE

= 10 Vdc  

I

C

=1.0 m Adc, V

CE

= 10 Vdc  

I

C

= 10 mAdc, V

CE

= 10 Vdc  

I

C

= 150 mAdc, V

CE

= 10 Vdc  

I

C

= 500 mAdc, V

CE

= 10 Vdc  

Collector-Emitter Saturation Voltage  

I

C

= 150 mAdc, I

B

= 15 mAdc  

I

C

= 500 mAdc, I

B

= 50 mAdc  

Base-Emitter Voltage  

2N5582  

50  

75  

100  

100  

30  

h

FE  

0.3  

1.0  

Vdc  

Vdc  

V

CE(sat)  

1.2  

2.0  

I

C

= 150 mAdc, I

B

= 15 mAdc  

I

C

= 500 mAdc, I

B

= 50 mAdc  

0.6  

V

BE(sat)  

DYNAMIC CHARACTERISTICS  

Forward Current Transfer Ratio  

I

C

= 1.0 mAdc, V

CE

= 10 Vdc  

30  

50  

2N5581  

2N5582  

h

fe  

Forward Current Transfer Ratio  

I

C

= 50 mAdc, V

CE

= 20 Vdc,

 

f = 100 MHz  

Output Capacitance  

V

CB

= 10 Vdc, I

E

= 0, 100 kHz

£

f

£

1.0 MHz  

Input Capacitance  

V

EB

= 0.5 Vdc, I

C

= 0, 100 kHz

£

f

£

1.0 MHz  

SWITCHING CHARACTERISTICS  

Turn-On Time  

V

CC

= 30 Vdc; I

C

= 150 mAdc; I

B1

=

15 mAdc  

Turn-Off Time  

2.5  

8.0  

25  

½

h

fe

½  

C

obo  

pF  

pF  

C

ibo  

h

s  

h

s  

35  

300  

V

CC

= 30 Vdc; I

C

= 150 mAdc; I

B1

=

I

B2

=

15 mAdc  

(3) Pulse Test: Pulse Width = 300

m

s, Duty Cycle

£

2.0%.  

6 Lake Street, Lawrence, MA

 

01841  

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  

120101  

Page 2 of 2