Microchip-Tech-2N6351
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2N6350 and 2N6351
Qualified Levels:
JAN, JANTX, and
JANTXV
NPN Darlington Power Silicon Transistor
Available on
commercial
versions
Qualified per MIL-PRF-19500/472
DESCRIPTION
This high speed NPN transistor is military qualified up to the JANTXV level.
This TO-33
leaded top-hat has three isolated terminals with terminal four, the collector terminal, tied to the
case.
FEATURES
•
•
JEDEC registered 2N6350 and 2N6351
JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/472
(See
part nomenclature
for all available options)
TO-33 Package
•
RoHS compliant versions available (commercial grade only)
APPLICATIONS / BENEFITS
•
•
•
Military and other high reliability applications
High frequency response
TO-33 leaded top-hat
M
A
XI
M
U
M RATINGS
@ T
C
= +25
o
C unless otherwise noted
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Resistance Junction-to-Case
Collector-Emitter Voltage
Symbol
T
J
and T
STG
R
Ө
JC
Value
Unit
o
C
-65 to +200
20
80
150
80
150
12
6.0
1.0
5.0
0.5
5
o
C/W
V
2N6350
2N6351
2N6350
2N6351
V
CEO
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158
(978) 620-2600
Collector-Base Voltage
Emitter-Base Voltage
Total Power Dissipation
V
CBO
V
EBO
P
T
V
V
@ T
A
= +25
o
C
(1)
@ T
C
= +100
o
C
(2)
W
Fax: (978) 689-0803
MSC – Ireland
Base Current
I
B
I
C
A
A
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353
(0) 65 6840044
Fax: +353 (0) 65 6822298
Collector Current
Notes:
1. Derate
linearly 5.72 mW/
o
C for T
A
> +25
o
C
2. Derate
linearly 50 mW/
o
C for T
C
> +100
o
C
Website:
T4-LDS-0314, Rev. 1 (11/20/13)
©2013 Microsemi Corporation
Page 1 of 8
2N6350 and 2N6351
MECHANICAL and PACKAGING
•
•
•
•
•
CASE: Hermetically
sealed, kovar base, nickel cap.
TERMINALS: Solder
dip (Sn63/Pb37), RoHS compliant matte-tin plating available on commercial grade only.
MARKING: Part
number, date code, manufacturer’s ID and serial number
WEIGHT: Approximately
1.2 grams
See
package dimensions
on last page.
PART NOMENCLATURE
JAN
2N6350
(e3)
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
Blank = Commercial
RoHS Compliance
e3 = RoHS Compliant (available
on commercial grade only)
Blank = non-RoHS Compliant
JEDEC type number
(see
Electrical Characteristics
table)
SYMBOLS & DEFINITIONS
Definition
Symbol
Base current:
The value of the dc current into the base terminal.
Collector current:
The value of the dc current into the collector terminal.
Emitter current:
The value of the dc current into the emitter terminal.
I
B
I
C
I
E
Case temperature: The temperature measured at a specified location on the case of a device.
Collector-base voltage:
The dc voltage between the collector and the base.
T
C
V
CB
Collector-base voltage, base open:
The voltage between the collector and base terminals when the emitter terminal is
open-circuited.
Collector-supply voltage:
The supply voltage applied to a circuit connected to the collector.
V
CBO
V
CC
Collector-emitter voltage, base open:
The voltage between the collector and the emitter terminals when the base
terminal is open-circuited.
V
CEO
Collector-emitter voltage:
The dc voltage between the collector and the emitter.
V
CE
V
EB
Emitter-base voltage:
The dc voltage between the emitter and the base.
Emitter-base voltage, collector open:
The voltage between the emitter and base terminals with the collector terminal
open-circuited.
V
EBO
T4-LDS-0314, Rev. 1 (11/20/13)
©2013 Microsemi Corporation
Page 2 of 8
2N6350 and 2N6351
ELECTRICAL CHARACTERISTICS
@ T
A
= +25
o
C unless otherwise noted
Characteristics
OFF CHARACTERISTICS
Symbol
Min.
Max.
Unit
2N6350
2N6351
80
150
Collector-Emitter Breakdown Voltage
I
C
= 25 mA , R
B1E
= 2.2 kΩ
, R
B2E
= 100 Ω
Collector-Emitter Breakdown Voltage
I
E
= 12 mA, base 1 open
I
E
= 12 mA, base 2 open
V
(BR)CEO
V
(BR)EBO
V
V
6.0
12
Collector-Emitter Cutoff Current
V
CE
= 80 V, V
EB1
= 2 V, R
B2E
= 100 Ω
V
CE
= 150 V, V
EB1
= 2 V, R
B2E
= 100 Ω
2N6350
2N6351
I
CEX
µ
A
1.0
ON CHARACTERISTICS
Forward-Current Transfer Ratio
I
C
= 1.0 A, V
CE
= 5.0 V, R
B2E
= 1 kΩ
2N6350
2N6351
2N6350
2N6351
2N6350
2N6351
2,000
1,000
2,000 10,000
1,000 10,000
400
200
I
C
= 5.0 A, V
CE
= 5.0 V, R
B2E
= 100
Ω
I
C
= 10.0 A, V
CE
= 5.0 V, R
B2E
= 100 Ω
h
FE
Collector-Emitter Saturation Voltage
I
C
= 5.0 A, I
B
= 5 mA, R
B2E
= 100 Ω
I
C
= 5.0 A, I
B
= 10 mA, R
B2E
= 100 Ω
V
V
1.5
2.5
V
CE(sat)
Base-Emitter Voltage Non-saturated
V
CE
= 5.0 V, I
C
= 5.0 A, R
B2E
= 100 Ω
2.5
V
BE
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
I
C
= 1.0 A, V
CE
= 10.0 V, f = 10 MHz, R
B2E
= 100 Ω
|hfe|
25
5
Output Capacitance
V
CB
= 10 V, 100 kHz
≤ f ≤ 1 MHz
, base 2 open
Cobo
pF
120
T4-LDS-0314, Rev. 1 (11/20/13)
©2013 Microsemi Corporation
Page 3 of 8
2N6350 and 2N6351
ELECTRICAL CHARACTERISTICS
@ T
C
= 25
o
C unless otherwise noted. (continued)
SWITCHING CHARACTERISTICS
Turn-On Time
V
CC
= 30 V, I
C
= 5.0 A
t
on
t
off
0.5
1.2
µ
s
µ
s
Turn-Off Time
V
CC
= 30 V, I
C
= 5.0 A
SAFE OPERATING AREA
(See
Figures 1 and 2
and
MIL-STD-750,Test Method 3053
)
DC Tests
T
C
= +100 ºC,
t ≥
1 second, 1 Cycle; t
r
+ t
f
= 10
µ
s, R
B2E
= 100 Ω
Test 1
V
CE
= 1.5 V, I
C
= 3.3 A
Test 2
V
CE
= 30 V, I
C
= 167 mA
Test 3
V
CE
= 80 V, I
C
= 35 mA (2N6350)
Test 4
V
CE
= 150 V, I
C
= 13 mA (2N6351)
T4-LDS-0314, Rev. 1 (11/20/13)
©2013 Microsemi Corporation
Page 4 of 8
2N6350 and 2N6351
SAFE OPERATING AREA
V
CE
– Collector to Emitter Voltage (Volts)
FIGURE 1
Maximum Safe Operating Area
T4-LDS-0314, Rev. 1 (11/20/13)
©2013 Microsemi Corporation
Page 5 of 8
2N6350 and 2N6351
SAFE OPERATING AREA
(continued)
V
CE
– Collector to Emitter Voltage (Volts)
FIGURE 2
Safe Operating Area For Switching Between Saturation And Cutoff
(unclamped inductive load)
T4-LDS-0314, Rev. 1 (11/20/13)
©2013 Microsemi Corporation
Page 6 of 8
2N6350 and 2N6351
PACKAGE DIMENSIONS
Dimensions
Inches Millimeters
Min Max
Symbol
Notes
Min
Max
8.51
6.60
9.40
CD
CH
HD
LC
LD
LL
LU
L
1
L
2
Q
0.305 0.335
7.75
0.240 0.260
6.10
0.335 0.370
8.51
3
0.200 TP
5.08 TP
4
5, 6
5, 6
5, 6
5, 6
5, 6
9
0.016 0.021
0.41
0.53
1.500 1.750 38.10 44.45
0.016 0.019
0.41
0.48
1.27
–
–
0.250
–
0.050
–
–
6.35
–
0.050
1.27
1.14
0.86
0.25
TL
TW
r
0.029 0.045
0.74
0.028 0.034
0.71
7
8
–
0.010
–
10
4
α
45
°
TP
45
°
TP
P
0.100
–
2.54
–
3
NOTES:
1. Dimensions
are in inches. Millimeters are given for information only.
2. Internal
resistance (typically 750 ohms). This resistor is optional.
3. Dimension
CD shall not vary more than 0.010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling.
4. Leads
at gauge plane 0.054 +0.001 –0.000 inch (1.37 +0.03 –0.00 mm) below seating plane shall be within 0.007 inch
(0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be
measured by direct methods.
5. Dimension
LU applies between dimension L1 and dimension L2. Dimension LD applies between L2 and LL minimum.
Diameter is uncontrolled in dimension L1 and beyond dimension LL minimum.
6. All
terminals.
7. Dimension
TL measured from maximum HD.
8. Beyond
r (radius) maximum, dimension
T
W
s
hall be held for a minimum length of 0.011 inch (0.28 mm).
9. Outline
in this zone is not controlled.
10. The
radius (dimension r) applies to both inside corners of the tab.
11. Terminal
designation is as follows: 1 – emitter, 2 – base (B2), 3 – base (B1), 4 – collector. The collector shall be
connected to the case.
12. In
accordance with ASME Y14.5M, diameters are equivalent to
Φ
x symbology.
See schematic on next page
T4-LDS-0314, Rev. 1 (11/20/13)
©2013 Microsemi Corporation
Page 7 of 8
2N6350 and 2N6351
SCHEMATIC
T4-LDS-0314, Rev. 1 (11/20/13)
©2013 Microsemi Corporation
Page 8 of 8
