Microchip-Tech-2N697

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Microchip-Tech-2N697
TECHNICAL DATA  
NPN M
E
DIUM
P
O
W
E
R
S
I
LICON
S
W
I
TCHING TRAN
S
I
S
T
OR  
Qualified per MI
L
–
P
RF
–
1
9500/ 99  
D
e
v
i
c
es  
Qualified
L
e
v
e
l  
2N696  
2N696S  
2N697  
2N697S  
JAN  
MAXIMUM RATINGS  
Ratings  
Collector-Base Voltage  
Symbol  
V

CBO  

Value  
60  
Units  
Vdc  
Emitter-Base Voltage  
5.0  
Vdc  
V

EBO  

Total Power Dissipation
 
@ T

A

= 25

0

C

(1)  

@ T

C

= 25

0

C

(2)  

0.6  
2.0  
W
W

0

C  
P

T  

Operating & Storage Junction Temperature Range  
-65 to +200  
T

J

,

T  
stg  
THERMAL CHARACTERISTICS  
Characteristics  
Symbol  
Max.  
Unit  

0

C/mW  
TO-5*  
Thermal Resistance, Junction-to-Case  
0.075  
R
q
JC  
1) Derate linearly 4.0 mW/

0

C for T

A

> 25

0

C  
2) Derate linearly 13.3 mW/

0

C for T

C

> 25

0

C  
*See appendix A for  
package outline  
ELECTRICAL CHARACTERISTICS (T

A

= 25

0

C unless otherwise noted)  
Characteristics  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
R

BE

= 10
W
, I

C

= 100 mAdc  
Collector-Base Cutoff Current  
V

CB

= 100 Vdc  
Symbol  
Min.  
Max.  
Unit  
Vdc  
V

(BR)  

CER  
40  
I

CBO  

m
Adc  
m
Adc  
10  
0.1  
V

CB

= 30 Vdc  
Emitter-Base Cutoff Current  
V

EB

= 7.0 Vdc  
ON CHARACTERISTICS

(3)  

Forward-Current Transfer Ratio  
I

C

= 150 mAdc, V

CE

= 10 Vdc  
I

EBO  

10  
2N696,s  
2N697,s  
2N696,s  
2N697,s  
60  
120  
20  
40  
12.5  
20.0  
h

FE  

I

C

= 500 mAdc, V

CE

= 10 Vdc  
Collector-Emitter Saturation Voltage  
I

C

= 150 mAdc, I

B

= 15 mAdc  
Base-Emitter Saturation Voltage  
I

C

= 150 mAdc, I

B

= 15 mAdc  
Vdc  
Vdc  
V

CE(sat)  

V

BE(sat)  

0.3  
1.5  
1.3  
6 Lake Street, Lawrence, MA
 
01841  
120101  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
Page 1 of 2  

2N696, 2N696s, 2N697, 2N697s SERIES  
ELECTRICAL CHARACTERISTICS (con’t)  
Characteristics  
Symbol  
Min.  
Max.  
Unit  
DYNAMIC CHARACTERISTICS  
Magnitude of Common Emitter Small-Signal Short-Circuit  
Forward-Current Transfer Ratio  
½
h

fe

½  
I

C

= 50 mAdc, V

CE

= 10 Vdc; f = 20 MHz  
2N696,s  
2N697,s  
2.5  
3.0  
10  
12  
Output Capacitance  
V

CB

= 10 Vdc, I

E

= 0, 100 kHz
£
f
£
1.0 MHz  
pF  
C

obo  

2.0  
25  
SWITCHING CHARACTERISTICS  
Turn-On Time  
(See Figure 3 of MIL-PRF-19500/ 99)  
Turn-Off Time  

t

on  
h
s  
h
s  
200  

t

off  
(See Figure 4 of MIL-PRF-19500/99)  
1,000  
(3) Pulse Test: Pulse Width 250 to 350
m
s, Duty Cycle
£
2.0%.  
6 Lake Street, Lawrence, MA
 
01841  
120101  

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
Page 2 of 2