Microchip-Tech-2N6987

TECHNICAL DATA  

MULTI

P

L

E (QUAD)

P

NP S

I

LICON

S

W

I

TCHING TRAN

S

I

S

T

OR  

Qualified per MI

L

–

P

RF

–

1

9500/ 558  

D

e

v

i

c

es  

Qualified

L

e

v

e

l  

JAN  

2N6987  

2N6987U  

JANTX  

JANTXV  

JANS  

2N6988  

MAXIMUM RATINGS

(1)  

Ratings  

Symbol  

Value  

60  

Units  

Vdc  

Collector-Emitter Voltage

(4)  

Collector-Base Voltage

(4)  

Emitter-Base Voltage

(4)  

Collector Current  

V

CEO  

V

CBO  

V

EBO  

I

C  

2N6987*  

TO- 116  

60  

Vdc  

5.0  

Vdc  

600  

mAdc  

Total Power Dissipation  

@ T

A

= +25

0

C  

2N6987

(2)  

1.5  

1.0  

0.4  

W

P

T  

2N6987U

(2)  

2N6988

(3)  

2N6987U*  

20 PIN LEADLESS  

Operating & Storage Junction Temperature Range  

-65 to +200  

T

op

,

T  

stg  

1) Maximum voltage between transistors shall be

³

500 Vdc  

2) Derate linearly 8.57 mW/

0

C above T

A

= +25

0

C  

3) Derate linearly 2.286 mW/

0

C above T

A

= +25

0

C.  

4) Ratings apply to each transistor in the array.  

2N6988*  

14 PIN FLAT PACK  

*See appendix A for  

package outline  

ELECTRICAL CHARACTERISTICS (T

A

= 25

0

C unless otherwise noted)  

Characteristics  

OFF CHARACTERISTICS  

Collector-Emitter Breakdown Voltage  

I

C

= 10 mAdc  

Collector-Base Cutoff Current  

V

CB

= 60 Vdc  

Symbol  

V

(BR)CEO  

I

CBO  

Min.  

Max.  

Unit  

60  

Vdc  

10  

10  

m

Adc  

h

Adc  

V

CB

= 50 Vdc  

Emitter-Base Cutoff Current  

V

BE

= 5.0 Vdc  

V

EB

= 3.5 Vdc  

10  

50  

m

Adc  

h

Adc  

I

EBO  

6 Lake Street, Lawrence, MA

 

01841  

120101  

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  

Page 1 of 2  

2N6987, 2N6988 JAN, SERIES  

ELECTRICAL CHARACTERISTICS (con’t)  

Characteristics  

ON CHARACTERISTICS  

Symbol  

Min.  

Max.  

Unit  

Forward-Current Transfer Ratio  

I

C

= 0.1 mAdc, V

CE

= 10 Vdc  

I

C

= 1.0 mAdc, V

CE

= 10 Vdc  

I

C

= 10 mAdc, V

CE

= 10 Vdc  

I

C

= 150 mAdc, V

CE

= 10 Vdc  

I

C

= 500 mAdc, V

CE

=10 Vdc  

Collector-Emitter Saturation Voltage  

I

C

= 150 mAdc, I

B

= 15 mAdc  

I

C

= 500 mAdc, I

B

= 50 mAdc  

Base-Emitter Voltage  

75  

100  

100  

100  

50  

450  

300  

h

FE  

0.4  

1.6  

V

CE(sat)  

Vdc  

Vdc  

1.3  

2.6  

I

C

= 150 mAdc, I

B

= 15 mAdc  

I

C

= 500 mAdc, I

B

= 50 mAdc  

V

BE(sat)  

DYNAMIC CHARACTERISTICS  

Magnitude of Small-Signal Short-Circuit  

Forward-Current Transfer Ratio  

2.0  

8.0  

½

h

fe

½  

I

C

= 50 mAdc, V

CE

= 20 Vdc, f = 100 MHz  

Small-Signal Short-Circuit Forward Current Transfer Ratio  

I

C

= 1.0 mAdc, V

CE

= 10 Vdc, f = 1.0 kHz  

Output Capacitance  

V

CB

= 10 Vdc, I

E

= 0, 100 kHz

£

f

£

1.0 MHz  

Input Capacitance  

100  

h

fe  

8.0  

30  

pF  

pF  

C

obo  

C

ibo  

V

EB

= 2.0 Vdc, I

C

= 0, 100 kHz

£

f

£

1.0 MHz  

6 Lake Street, Lawrence, MA

 

01841  

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  

120101  

Page 2 of 2