Microchip-Tech-APL502B2G
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APL502B2(G)
APL502L(G)
500Vꢀꢀ 58Aꢀ
0.090Ω
B2
LINEAR MOSFET
T-Ma
x
TM
TO-264
Linear Mosfets are optimized for applications operating in the Linear
region where concurrent
high voltage and high current can occur at
near DC conditions (>100 msec).
L
•ꢀHigherꢀFBSOAꢀ
•ꢀPopularꢀ
T-MAX™
orꢀTO-264ꢀPackageꢀ
D
S
•ꢀHigherꢀPowerꢀDissipationꢀ
•ꢀRoHSꢀCompliant
G
MAXIMUM RATINGS
All Ratings:
T
= 25°C unless otherwise specified.
C
APL502B2_L(G)
UNIT
Symbol
V
DSS
I
D
Parameter
Drain-Source Voltage
Volts
500
58
Continuous Drain Current @ T
C
= 25°C
Amps
Volts
1
I
DM
232
Pulsed Drain Current
V
GS
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
±30
V
GSM
±40
Watts
W/°C
730
T
o
tal Power Dissipation @ T
C
= 25°C
Linear Derating Factor
P
D
5.84
-55 to 150
300
T
J
,T
STG
T
L
Operating and Storage Junction
T
e
mperature Range
°C
Amps
mJ
Lead
T
e
mperature: 0.063″ from Case for 10 Sec.
1
I
AR
58
Avalanche Current
(Repetitive and Non-Repetitive)
1
E
AR
E
AS
50
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
4
3000
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic
/ Test Conditions / Part Number
UNIT
Volts
MIN
TYP
MAX
BV
DSS
500
58
Drain-Source Breakdown Voltage (V
GS
= 0
V
,
I
D
= 250 µA)
On State Drain Current
2
(V
DS
> I
D
(ON) x R
DS
(ON) Max, V
GS
= 15V)
I
D
(ON)
Amps
Ohms
Drain-Source On-State Resistance
2
(V
GS
= 15
V
,
2
9A)
Zero Gate Voltage Drain Current
(V
DS
= 500
V
,
V
GS
= 0V)
Zero Gate Voltage Drain Current
(V
DS
= 400
V
,
V
GS
= 0
V
,
T
C
= 125°C)
Gate-Source Leakage Current
(V
GS
= ±30
V
,
V
DS
= 0V)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 2.5mA)
R
DS
(ON)
0.09
25
I
DSS
µA
250
±100
4
I
GSS
nA
V
GS
(TH)
Volts
2
CAUTION:ꢀTheseꢀDevicesꢀareꢀSensitiveꢀtoꢀElectrostaticꢀDischarge.ꢀProperꢀHandlingꢀProceduresꢀShouldꢀBeꢀFollowed.
APL502B2_L(G)
DYNAMICꢀCHARACTERISTICS
Symbol Characteristic
Test Conditions
UNIT
MIN
TYP
7485
1290
617
13
MAX
9000
1810
930
26
C
iss
C
oss
C
rss
t
d
(on)
t
r
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
pF
V
GS
= 15V
V
DD
= 250V
27
54
ns
I
D
= 29A @ 25°C
R
G
= 0.6
Ω
t
d
(off)
t
f
Turn-off Delay Time
Fall Time
56
84
16
20
THERMAL CHARACTERISTICS
Characteristic
Symbol
UNIT
MIN
TYP
MAX
R
θJC
Junction to Case
°C/W
.17
oz
g
0.22
5.9
Package Weight
W
T
1
2
3
Repetitive Rating: Pulse width limited by maximum junction
temperature.
See MIL-STD-750 Method 3471
4
Starting T = +25°C, L = 1.78mH, R
= 25
Ω
, Peak I
= 58A
j
G
L
Pulse
T
e
st: Pulse width < 380 µS, Duty Cycle < 2%
Microsemiꢀreservesꢀtheꢀrightꢀtoꢀchange,ꢀwithoutꢀnotice,ꢀtheꢀspecificationsꢀandꢀinformationꢀcontainedꢀherein.
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
D = 0.9
0.7
0.5
Note:
t
1
0.3
0.1
t
2
t
1
t
/
2
Duty Factor D =
Peak T
= P
x Z
0.02
0
+ T
C
SINGLE PULSE
10
-3
J
DM
θJC
0.05
10
-5
10
-4
10
-2
10
-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGUREꢀ1,ꢀMAXIMUMꢀEFFECTIVEꢀTRANSIENTꢀTHERMALꢀIMPEDANCE,ꢀJUNCTION-TO-CASEꢀvsꢀPULSEꢀDURATION
T
J
(°C)
T
C
(°C)
Z
EXT
are the external therma
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
0.0602
0.109
Dissipated Power
(Watts)
0.0158
0.305
FIGUREꢀ1a,ꢀTRANSIENTꢀꢀTHERMALꢀꢀIMPEDANCEꢀꢀMODEL
Typical Performance Curves
APL502B2_L(G)
120
120
100
80
V
GS
=10
V
,
1
5 V
V
GS
=10, 15V
100
80
8 V
8 V
7.5 V
7 V
7.5 V
60
60
40
20
0
7 V
6.5 V
40
6.5 V
6 V
6 V
20
0
5.5 V
5.5 V
0
50
100
150
200
250
0
V
5
10
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
15
20
25
30
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
ꢀ
ꢀ
ꢀ
FIGUREꢀ2,ꢀꢀHIGHꢀꢀVOLTAGEꢀꢀOUTPUTꢀCHARACTERISTICSꢀ
FIGUREꢀ3,LOWꢀꢀVOLTAGEꢀꢀꢀOUTPUTꢀCHARACTERISTICSꢀ
1.30
80
NORMALIZED TO
V
DS
> I
D
(ON) x
R
DS
(ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
V
= 10V
@ 29A
GS
1.20
1.10
1.00
0.90
60
40
V
GS
=10V
T
J
= +125°C
20
T
J
= -55°C
T
J
= +25°C
0.80
0.70
V
GS
=20V
80
0
0
2
4
6
8
10
0
20
40
60
100
120
V
, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGUREꢀ4,ꢀTRANSFERꢀCHARACTERISTICSꢀ
I ,
DRAIN CURRENT (AMPERES)
GS
D
FIGUREꢀ5,ꢀR (ON)ꢀvsꢀDRAINꢀCURRENT
DS
1.15
60
50
40
30
20
1.10
1.05
1.00
0.95
0.90
10
0
25
50
75
100
125
150
-50
0
50
100
150
T ,
CASE TEMPERATURE (°C)
T , JUNCTION TEMPERATURE (°C)
C
J
FIGUREꢀ6,ꢀMAXIMUMꢀDRAINꢀCURRENTꢀvsꢀCASEꢀTEMPERATUREꢀ
FIGUREꢀ7,ꢀBREAKDOWNꢀVOLTAGEꢀvsꢀTEMPERATURE
2.5
1.2
I
= 29A
= 12V
D
V
GS
1.1
1.0
0.9
0.8
0.7
0.6
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50 75
100 125
150
-50 -25
0
25 50 75
100 125 150
T , JUNCTION TEMPERATURE (°C)
FIGUREꢀ8,ꢀON-RESISTANCEꢀvs.ꢀTEMPERATUREꢀ
T ,
CASE TEMPERATURE (°C)
FIGUREꢀ9,ꢀTHRESHOLDꢀVOLTAGEꢀvsꢀTEMPERATURE
J
C
ꢀ
APL502B2_L(G)
400
100
400
100
I
DM
I
DM
10
10
13μS
100μS
1mS
13μS
100μS
1mS
10mS
R
ds(on)
R
ds(on)
°
T
= 150 C
J
10mS
100mS
DC line
°
T
= 25 C
1
1
C
100mS
DC line
Scaling for Different Case & Junction
T
e
mperatures:
°
T
= 125 C
J
°
T
= 75 C
I
= I
*(T –
T )/125
D (TC = 25°C)
C J
C
D
0.1
0.1
1
10
100
800
1
10
100
800
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
DS
ꢀ
FIGUREꢀ10,ꢀFORWARDꢀSAFEꢀOPERATINGꢀAREAꢀ
FIGUREꢀ11,ꢀMAXIMUMꢀꢀFORWARDꢀSAFEꢀOPERATINGꢀAREA
30,000
C
iss
10,000
5,000
C
oss
1,000
500
C
rss
100
.01
.1
1
10
50
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
ꢀ
FIGUREꢀ12,ꢀCAPACITANCEꢀvsꢀDRAIN-TO-SOURCEꢀVOLTAGE
T-MAX
TM
ꢀ(B2)ꢀPackageꢀOutline
TO-264ꢀ(L)ꢀPackageꢀOutline
4.69 (.185)
4.60 (.181)
5.31 (.209)
15.49 (.610)
16.26 (.640)
5.21 (.205)
19.51 (.768)
20.50 (.807)
1.49 (.059)
2.49 (.098)
1.80 (.071)
2.01 (.079)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
20.80 (.819)
21.46 (.845)
25.48 (1.003)
26.49 (1.043)
2.87 (.113)
3.12 (.123)
4.50 (.177) Max.
2.29 (.090)
2.69 (.106)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
19.81 (.780)
21.39 (.842)
Gate
Drain
Source
Gate
Drain
Source
1.01 (.040)
1.40 (.055)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.21 (.087)
2.59 (.102)
2.79 (.110)
5.45 (.215) BSC
2-Plcs.
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
APL502B2_L(G)
Disclaimer:ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND
CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used
without the express duly signed written consent of Microsemi. If the recipient of this document has entered into a disclosure agreement with
Microsemi, then the terms
of such Agreement will also apply .
This document and the information contained herein may not be modified, by
any person other than authorized personnel of Microsemi.
No license under any patent, copyright, trade secret or other intellectual
property
right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or
otherwise. Any
license under such intellectual property rights must be approved by Microsemi in writing signed by an officer of Microsemi.
Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice.
This
product has been subject to limited testing and should not be used in conjunction with life-support or other mission-critical equipment or
applications. Microsemi
assumes no liability whatsoever, and Microsemi disclaims any express or implied warranty, relating to sale and/or
use of Microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any
patent, copyright or other intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
user must conduct and complete all performance and other testing of this product as well as any user or customers final application. User or
customer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the customer’s and user’s re
–
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specifically disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product is
