Microchip-Tech-APL502B2G

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Microchip-Tech-APL502B2G
APL502B2(G)  
APL502L(G)  
500Vꢀꢀ 58Aꢀ  
0.090Ω  
B2  
LINEAR MOSFET  
T-Ma
x

TM  

TO-264  
Linear Mosfets are optimized for applications operating in the Linear  
region where concurrent
 
high voltage and high current can occur at  
near DC conditions (>100 msec).  
L
•ꢀHigherꢀFBSOAꢀ  
•ꢀPopularꢀ
T-MAX™
orꢀTO-264ꢀPackageꢀ  
D
S
•ꢀHigherꢀPowerꢀDissipationꢀ  
•ꢀRoHSꢀCompliant  
G
MAXIMUM RATINGS  
All Ratings:
 
T
= 25°C unless otherwise specified.  
C
APL502B2_L(G)  
UNIT  
Symbol  
V

DSS  

I

D  

Parameter  
Drain-Source Voltage  
Volts  
500  
58  
Continuous Drain Current @ T

C

= 25°C  
Amps  
Volts  
1
I

DM  

232  
Pulsed Drain Current  
V

GS  

Gate-Source Voltage Continuous  
Gate-Source Voltage Transient  
±30  
V

GSM  

±40  
Watts  
W/°C  
730  
T
o
tal Power Dissipation @ T

C

= 25°C  
Linear Derating Factor  
P

D  

5.84  
-55 to 150  
300  
T

J

,T

STG  

T

L  

Operating and Storage Junction
T
e
mperature Range  
°C  
Amps  
mJ  
Lead
T
e
mperature: 0.063″ from Case for 10 Sec.  
1
I

AR  

58  
Avalanche Current  
(Repetitive and Non-Repetitive)  
1
E

AR  

E

AS  

50  
Repetitive Avalanche Energy  
Single Pulse Avalanche Energy  
4
3000  
STATIC ELECTRICAL CHARACTERISTICS  
Symbol Characteristic
 
/ Test Conditions / Part Number  
UNIT  
Volts  
MIN  
TYP  
MAX  
BV

DSS  

500  
58  
Drain-Source Breakdown Voltage (V

GS

= 0
V
,
I

D

= 250 µA)  
On State Drain Current
 

2

(V

DS

> I

D

(ON) x R

DS

(ON) Max, V

GS

= 15V)  
I

D

(ON)  
Amps  
Ohms  
Drain-Source On-State Resistance
 

2

(V

GS

= 15
V
,
2
9A)  
Zero Gate Voltage Drain Current
 
(V

DS

= 500
V
,
V

GS

= 0V)  
Zero Gate Voltage Drain Current
 
(V

DS

= 400
V
,
V

GS

= 0
V
,
T

C

= 125°C)  
Gate-Source Leakage Current
 
(V

GS

= ±30
V
,
V

DS

= 0V)  
Gate Threshold Voltage
 
(V

DS

= V

GS

, I

D

= 2.5mA)  
R

DS

(ON)  
0.09  
25  
I

DSS  

µA  
250  
±100  
4
I

GSS  

nA  
V

GS

(TH)  
Volts  
2
CAUTION:ꢀTheseꢀDevicesꢀareꢀSensitiveꢀtoꢀElectrostaticꢀDischarge.ꢀProperꢀHandlingꢀProceduresꢀShouldꢀBeꢀFollowed.  

APL502B2_L(G)  
DYNAMICꢀCHARACTERISTICS  
Symbol Characteristic  
Test Conditions  
UNIT  
MIN  
TYP  
7485  
1290  
617  
13  
MAX  
9000  
1810  
930  
26  
C

iss  

C

oss  

C

rss  

t

d

(on)  
t

r  

Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-on Delay Time  
Rise Time  
V

GS

= 0V  
V

DS

= 25V  
f = 1 MHz  
pF  
V

GS

= 15V  
V

DD

= 250V  
27  
54  
ns  
I

D

= 29A @ 25°C  
R

G

= 0.6
Ω
 
t

d

(off)  
t

f  

Turn-off Delay Time  
Fall Time  
56  
84  
16  
20  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
UNIT  
MIN  
TYP  
MAX  
R

θJC  

Junction to Case  
°C/W  
.17  
oz  
g
0.22  
5.9  
Package Weight  
W

T  

1
2
3
Repetitive Rating: Pulse width limited by maximum junction  
temperature.  
See MIL-STD-750 Method 3471  
4
Starting T = +25°C, L = 1.78mH, R
 
= 25
Ω
, Peak I
 
= 58A  
j
G
L
Pulse
T
e
st: Pulse width < 380 µS, Duty Cycle < 2%  
Microsemiꢀreservesꢀtheꢀrightꢀtoꢀchange,ꢀwithoutꢀnotice,ꢀtheꢀspecificationsꢀandꢀinformationꢀcontainedꢀherein.  
0.18  
0.16  
0.14  
0.12  
0.10  
0.08  
0.06  
0.04  
D = 0.9  
0.7  
0.5  
Note:  
t
1
0.3  
0.1  
t
2
t
1
t
/
2
Duty Factor D =  
Peak T
 
= P
 
x Z  
0.02  
0
+ T  
C
SINGLE PULSE  
10

-3  

J
DM  
θJC  
0.05  
10

-5  

10

-4  

10

-2  

10

-1  

1.0  
RECTANGULAR PULSE DURATION (SECONDS)  
FIGUREꢀ1,ꢀMAXIMUMꢀEFFECTIVEꢀTRANSIENTꢀTHERMALꢀIMPEDANCE,ꢀJUNCTION-TO-CASEꢀvsꢀPULSEꢀDURATION  
T

J

(°C)  
T

C

(°C)  
Z

EXT

are the external therma  
impedances: Case to sink,  
sink to ambient, etc. Set to  
zero when modeling only  
the case to junction.  
0.0602  
0.109  
Dissipated Power  
(Watts)  
0.0158  
0.305  
FIGUREꢀ1a,ꢀTRANSIENTꢀꢀTHERMALꢀꢀIMPEDANCEꢀꢀMODEL  

Typical Performance Curves  
APL502B2_L(G)  
120  
120  
100  
80  
V

GS

=10
V
,
1
5 V  
V

GS

=10, 15V  
100  
80  
8 V  
8 V  
7.5 V  
7 V  
7.5 V  
60  
60  
40  
20  
0
7 V  
6.5 V  
40  
6.5 V  
6 V  
6 V  
20  
0
5.5 V  
5.5 V  
0
50  
100  
150  
200  
250  
0
V
5
10  
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)  
DS  
15  
20  
25  
30  
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)  
DS  
ꢀ
ꢀ
ꢀ
FIGUREꢀ2,ꢀꢀHIGHꢀꢀVOLTAGEꢀꢀOUTPUTꢀCHARACTERISTICSꢀ  
FIGUREꢀ3,LOWꢀꢀVOLTAGEꢀꢀꢀOUTPUTꢀCHARACTERISTICSꢀ  
1.30  
80  
NORMALIZED TO  
V

DS

> I

D

(ON) x
 
R

DS

(ON)MAX.  
250µSEC. PULSE TEST  
@ <0.5 % DUTY CYCLE  
V
= 10V
 
@ 29A  
GS  
1.20  
1.10  
1.00  
0.90  
60  
40  
V

GS

=10V  
T

J

= +125°C  
20  
T

J

= -55°C  
T

J

= +25°C  
0.80  
0.70  
V

GS

=20V  
80  
0
0
2
4
6
8
10  
0
20  
40  
60  
100  
120  
V
, GATE-TO-SOURCE VOLTAGE (VOLTS)  
FIGUREꢀ4,ꢀTRANSFERꢀCHARACTERISTICSꢀ  
I ,
 
DRAIN CURRENT (AMPERES)  
GS  
D
FIGUREꢀ5,ꢀR (ON)ꢀvsꢀDRAINꢀCURRENT  
DS  
1.15  
60  
50  
40  
30  
20  
1.10  
1.05  
1.00  
0.95  
0.90  
10  
0
25  
50  
75  
100  
125  
150  
-50  
0
50  
100  
150  
T ,
 
CASE TEMPERATURE (°C)  
T , JUNCTION TEMPERATURE (°C)  
C
J
FIGUREꢀ6,ꢀMAXIMUMꢀDRAINꢀCURRENTꢀvsꢀCASEꢀTEMPERATUREꢀ  
FIGUREꢀ7,ꢀBREAKDOWNꢀVOLTAGEꢀvsꢀTEMPERATURE  
2.5  
1.2  
I
= 29A  
= 12V  
D
V
GS  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
2.0  
1.5  
1.0  
0.5  
0.0  
-50 -25  
0
25 50 75
 
100 125
 
150  
-50 -25  
0
25 50 75
 
100 125 150  
T , JUNCTION TEMPERATURE (°C)  
FIGUREꢀ8,ꢀON-RESISTANCEꢀvs.ꢀTEMPERATUREꢀ  
T ,
 
CASE TEMPERATURE (°C)  
FIGUREꢀ9,ꢀTHRESHOLDꢀVOLTAGEꢀvsꢀTEMPERATURE  
J
C
ꢀ

APL502B2_L(G)  
400  
100  
400  
100  
I

DM  

I

DM  

10  
10  
13μS  
100μS  
1mS  
13μS  
100μS  
1mS  
10mS  
R

ds(on)  

R

ds(on)  

°
T
= 150 C  
J
10mS  
100mS  
DC line  
°
T
= 25 C  
1
1
C
100mS  
DC line  
Scaling for Different Case & Junction  
T
e
mperatures:  
°
T
= 125 C  
J
°
T
= 75 C  
I
= I
 
*(T –
 
T )/125  
D (TC = 25°C)
 
C J  
C
D
0.1  
0.1  
1
10  
100  
800  
1
10  
100  
800  
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)  
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)  
DS  
DS  
ꢀ
FIGUREꢀ10,ꢀFORWARDꢀSAFEꢀOPERATINGꢀAREAꢀ  
FIGUREꢀ11,ꢀMAXIMUMꢀꢀFORWARDꢀSAFEꢀOPERATINGꢀAREA  
30,000  
C

iss  

10,000  
5,000  
C

oss  

1,000  
500  
C

rss  

100  
.01  
.1  
1
10  
50  
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)  
DS  
ꢀ
FIGUREꢀ12,ꢀCAPACITANCEꢀvsꢀDRAIN-TO-SOURCEꢀVOLTAGE  
T-MAX

TM

ꢀ(B2)ꢀPackageꢀOutline  
TO-264ꢀ(L)ꢀPackageꢀOutline  
4.69 (.185)  
4.60 (.181)  
5.31 (.209)  
15.49 (.610)  
16.26 (.640)  
5.21 (.205)  
19.51 (.768)  
20.50 (.807)  
1.49 (.059)  
2.49 (.098)  
1.80 (.071)  
2.01 (.079)  
3.10 (.122)  
3.48 (.137)  
5.38 (.212)  
6.20 (.244)  
5.79 (.228)  
6.20 (.244)  
20.80 (.819)  
21.46 (.845)  
25.48 (1.003)  
26.49 (1.043)  
2.87 (.113)  
3.12 (.123)  
4.50 (.177) Max.  
2.29 (.090)  
2.69 (.106)  
2.29 (.090)  
2.69 (.106)  
1.65 (.065)  
2.13 (.084)  
0.40 (.016)  
0.79 (.031)  
19.81 (.780)  
20.32 (.800)  
19.81 (.780)  
21.39 (.842)  
Gate  
Drain  
Source  
Gate  
Drain  
Source  
1.01 (.040)  
1.40 (.055)  
0.48 (.019)  
0.84 (.033)  
2.59 (.102)  
3.00 (.118)  
0.76 (.030)  
1.30 (.051)  
2.21 (.087)  
2.59 (.102)  
2.79 (.110)  
5.45 (.215) BSC  
2-Plcs.  
3.18 (.125)  
5.45 (.215) BSC  
2-Plcs.  
Dimensions in Millimeters and (Inches)  
These dimensions are equal to the TO-247 without the mounting hole.  
Dimensions in Millimeters and (Inches)  

APL502B2_L(G)  
Disclaimer:ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ  
The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND  
CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used  
without the express duly signed written consent of Microsemi. If the recipient of this document has entered into a disclosure agreement with  
Microsemi, then the terms
 
of such Agreement will also apply .
 
This document and the information contained herein may not be modified, by  
any person other than authorized personnel of Microsemi.
 
No license under any patent, copyright, trade secret or other intellectual
 
property  
right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or  
otherwise. Any
 
license under such intellectual property rights must be approved by Microsemi in writing signed by an officer of Microsemi.  
Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice.
 
This  
product has been subject to limited testing and should not be used in conjunction with life-support or other mission-critical equipment or  
applications. Microsemi
 
assumes no liability whatsoever, and Microsemi disclaims any express or implied warranty, relating to sale and/or  
use of Microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any  
patent, copyright or other intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or  
user must conduct and complete all performance and other testing of this product as well as any user or customers final application. User or  
customer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the customer’s and user’s re
–  
sponsibility to independently determine suitability of any Microsemi product and to test and verify the same. The information contained herein  
is provided “AS IS, WHERE IS” and with all faults, and the entire risk associated with such information is entirely with the User. Microsemi  
specifically disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product is