Microchip-Tech-APL502J
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APL502J
500V
ꢀ 52A
0.090
Ω
S
LINEAR MOSFET
S
D
Linear Mosfets are optimized for applications operating in the Linear
region where concurrent
high voltage and high current can occur at
near DC conditions (>100 msec).
G
SOT-227
“UL Recognized”
file #145592
ISOTO
P
®
•ꢀHigherꢀFBSOAꢀ
•ꢀPopularꢀSOT-227ꢀPackage
•ꢀSOAꢀRated
D
•ꢀHigherꢀPowerꢀDissipationꢀ
G
•ꢀRoHSꢀCompliant
S
MAXIMUM RATINGS
All Ratings:
T
= 25°C unless otherwise specified.
C
APL502J
UNIT
Symbol
V
DSS
I
D
Parameter
Volts
Drain-Source Voltage
500
52
Continuous Drain Current @ T
C
= 25°C
Amps
Volts
1
I
DM
208
Pulsed Drain Current
V
GS
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
±30
V
GSM
±40
Watts
W/°C
568
T
o
tal Power Dissipation @ T
C
= 25°C
Linear Derating Factor
P
D
4.55
-55 to 150
300
T
J
,T
STG
T
L
Operating and Storage Junction
T
e
mperature Range
°C
Amps
mJ
Lead
T
e
mperature: 0.063″ from Case for 10 Sec.
1
I
AR
52
Avalanche Current
(Repetitive and Non-Repetitive)
1
E
AR
E
AS
50
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
4
3000
STATICꢀELECTRICALꢀCHARACTERISTICS
Symbol
Characteristic / Test Conditions / Part Number
UNIT
Volts
MIN
500
52
TYP
MAX
BV
DSS
Drain-Source Breakdown Voltage (V
GS
= 0
V
,
I
D
= 250 µA)
On State Drain Current
2
(V
DS
> I
D
(ON) x R
DS
(ON) Max, V
GS
= 15V)
I
D
Amps
Ohms
(ON)
Drain-Source On-State Resistance
2
(V
GS
= 15
V
,
2
6A)
Zero Gate Voltage Drain Current
(V
DS
= 500
V
,
V
GS
= 0V)
Zero Gate Voltage Drain Current
(V
DS
= 400
V
,
V
GS
= 0
V
,
T
C
= 125°C)
Gate-Source Leakage Current
(V
GS
= ±30
V
,
V
DS
= 0V)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 2.5mA)
R
DS
0.09
25
(ON)
I
DSS
µA
250
±100
4
I
GSS
V
GS
nA
Volts
2
(TH)
CAUTION:ꢀTheseꢀDevicesꢀareꢀSensitiveꢀtoꢀElectrostaticꢀDischarge.ꢀProperꢀHandlingꢀProceduresꢀShouldꢀBeꢀFollowed.
APL502J
DYNAMICꢀCHARACTERISTICS
Symbol
Characteristic
Test Conditions
MIN
TYP
7600
1280
620
13
MAX
9000
1810
930
26
UNIT
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
pF
ns
t
d
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= 52A @ 25°C
R
G
= 0.6
Ω
(on)
t
r
24
48
58
87
t
d
Turn-off Delay Time
Fall Time
(off)
t
f
14
17
THERMALꢀCHARACTERISTICS
Characteristic
Symbol
UNIT
MIN
TYP
MAX
Junction to Case
R
θJC
.22
°C/W
Volts
oz
RM
S
V
oltag
e
(50-6
0
H
z
S
inusoida
l
W
avefor
m
F
ro
m
T
e
rminal
s
t
o
M
ountin
g
B
as
e
f
o
r
1
M
in.)
V
Isolation
2500
1.03
29.2
Package Weight
W
T
g
10
lb•in
Maximum
T
o
rque for Device Mounting Screws and Electrical
T
e
rminations.
T
o
rque
SOA1
1.1
N•m
Safe Operating Area
V
DS
= 400
V
,
I
DS
= 0.75A, t = 20 sec., T
C
= 60°C
300
Watts
1
2
3
Repetitive Rating: Pulse width limited by maximum junction
temperature.
See MIL-STD-750 Method 3471
4
Starting T = +25°C, L = 2.22mH, R
= 25
Ω
, Peak I
= 52A
j
G
L
Pulse
T
e
st: Pulse width < 380 µS, Duty Cycle < 2%
Microsemiꢀreservesꢀtheꢀrightꢀtoꢀchange,ꢀwithoutꢀnotice,ꢀtheꢀspecificationsꢀandꢀinformationꢀcontainedꢀherein.
0.25
D = 0.9
0.20
0.7
0.15
0.5
Note:
0.10
t
1
0.3
t
2
0.05
t
1
t
/
2
Duty Factor D =
Peak T
= P
x Z
0.1
0.05
+ T
C
J
DM
θJC
SINGLE PULSE
10
-3
0
10
-5
10
-4
10
-2
10
-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGUREꢀ1,ꢀMAXIMUMꢀEFFECTIVEꢀTRANSIENTꢀTHERMALꢀIMPEDANCE,ꢀJUNCTION-TO-CASEꢀvsꢀPULSEꢀDURATION
T
J
(°C)
T
C
(°C)
Z
EXT
are the external therma
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
0.052
0.155
0.0126
Dissipated Power
(Watts)
0.061
0.423
67.45
FIGUREꢀ1a,ꢀTRANSIENTꢀꢀTHERMALꢀꢀIMPEDANCEꢀꢀMODEL
Typical Performance Curves
APL502J
120
120
100
80
V
GS
=10
V
,
1
5 V
V
GS
=10, 15V
100
80
8 V
8 V
7.5 V
7 V
7.5 V
60
60
40
20
0
7 V
6.5 V
6.5 V
40
6 V
6 V
5.5 V
20
0
5.5 V
0
50
100
150
200
250
0
V
5
10
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
15
20
25
30
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
ꢀ
ꢀ
ꢀ
FIGUREꢀ2,ꢀꢀHIGHꢀꢀVOLTAGEꢀꢀOUTPUTꢀCHARACTERISTICSꢀ
FIGUREꢀ3,LOWꢀꢀVOLTAGEꢀꢀꢀOUTPUTꢀCHARACTERISTICSꢀ
80
1.30
NORMALIZED TO
V
DS
> I
D
(ON) x
R
DS
(ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
V
= 10V
@ 26A
GS
1.20
1.10
1.00
0.90
60
40
V
GS
=10V
T
J
= +125°C
20
V
GS
=20V
T
J
= -55°C
0.80
0.70
T
J
= +25°C
0
0
2
4
6
8
10
0
20
40
60
80
100
120
V
, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGUREꢀ4,ꢀTRANSFERꢀCHARACTERISTICSꢀ
I ,
DRAIN CURRENT (AMPERES)
GS
D
FIGUREꢀ5,ꢀR (ON)ꢀvsꢀDRAINꢀCURRENT
DS
1.15
60
50
40
30
20
1.10
1.05
1.00
0.95
0.90
10
0
25
50
75
100
125
150
-50
0
50
100
150
T ,
CASE TEMPERATURE (°C)
T , JUNCTION TEMPERATURE (°C)
C
J
FIGUREꢀ6,ꢀMAXIMUMꢀDRAINꢀCURRENTꢀvsꢀCASEꢀTEMPERATUREꢀ
FIGUREꢀ7,ꢀBREAKDOWNꢀVOLTAGEꢀvsꢀTEMPERATURE
1.2
2.5
I
= 26A
= 12V
D
V
GS
1.1
1.0
0.9
0.8
0.7
0.6
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50 75
100 125
150
-50 -25
0
25 50 75
100 125 150
T , JUNCTION TEMPERATURE (°C)
FIGUREꢀ8,ꢀON-RESISTANCEꢀvs.ꢀTEMPERATUREꢀ
T ,
CASE TEMPERATURE (°C)
FIGUREꢀ9,ꢀTHRESHOLDꢀVOLTAGEꢀvsꢀTEMPERATURE
J
C
ꢀ
APL502J
400
100
400
100
I
DM
I
DM
10
1
10
1
13μS
100μS
1mS
10mS
100mS
13μS
100μS
R
ds(on)
R
ds(on)
°
T
= 150 C
1mS
J
°
T
= 25 C
10mS
C
Scaling for Different Case & Junction
100mS
DC line
°
T
= 125 C
J
DC line
T
e
mperatures:
°
T
= 75 C
I
= I
*(T –
T )/125
C
D
D (TC = 25°C)
C J
0.1
0.1
1
10
100
800
1
10
100
800
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
DS
ꢀ
FIGUREꢀ10,ꢀFORWARDꢀSAFEꢀOPERATINGꢀAREAꢀ
FIGUREꢀ11,ꢀMAXIMUMꢀꢀFORWARDꢀSAFEꢀOPERATINGꢀAREA
30,000
C
iss
10,000
5,000
C
oss
1,000
500
C
rss
100
.01
.1
1
10
50
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
ꢀ
FIGUREꢀ12,ꢀCAPACITANCEꢀvsꢀDRAIN-TO-SOURCEꢀVOLTAGE
SOT-227ꢀ(ISOTOP
®
)ꢀPackageꢀOutline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
8.9 (.350)
9.6 (.378)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
7.8 (.307)
8.2 (.322)
Hex Nut M
4
(4 places
)
25.2 (0.992)
25.4 (1.000)
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
0.75 (.030)
12.6 (.496)
0.85 (.033)
12.8 (.504)
3.3 (.129)
3.6 (.143)
1.95 (.077)
2.14 (.084)
14.9 (.587)
* Source
Drain
*
15.1 (.594)
30.1 (1.185)
30.3 (1.193)
Emitter terminals are shorte
d
internally. Current handlin
g
capability is equal for either
Source terminal
.
38.0 (1.496)
38.2 (1.504)
* Source
Gate
DimensionsꢀinꢀMillimetersꢀ
APL502J
Disclaimer:ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND
CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used
without the express duly signed written consent of Microsemi. If the recipient of this document has entered into a disclosure agreement with
Microsemi, then the terms
of such Agreement will also apply .
This document and the information contained herein may not be modified, by
any person other than authorized personnel of Microsemi.
No license under any patent, copyright, trade secret or other intellectual
property
right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or
otherwise. Any
license under such intellectual property rights must be approved by Microsemi in writing signed by an officer of Microsemi.
Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice.
This
product has been subject to limited testing and should not be used in conjunction with life-support or other mission-critical equipment or
applications. Microsemi
assumes no liability whatsoever, and Microsemi disclaims any express or implied warranty, relating to sale and/or
use of Microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any
patent, copyright or other intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
user must conduct and complete all performance and other testing of this product as well as any user or customers final application. User or
customer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the customer’s and user’s re
–
sponsibility to independently determine suitability of any Microsemi product and to test and verify the same. The information contained herein
is provided “AS IS, WHERE IS” and with all faults, and the entire risk associated with such information is entirely with the User. Microsemi
specifically disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product is
