Microchip-Tech-APL602J
| Part # | Microchip-Tech-APL602J |
Download  | Microchip-Tech-APL602J |
APL602J
600V 43A 0.125
Ω
S
S
LINEAR MOSFET
Linear Mosfets are optimized for applications operating in the Linear
region where concurrent
high voltage and high current can occur at
near DC conditions (>100 msec).
D
G
SOT-227
“UL Recognized”
ISOTOP
®
• Higher FBSOA
• Popular SOT-227 Package
D
S
• Higher Power Dissipation
G
MAXIMU
M
R
ATINGS
All Ratings:
T =
25°C unless otherwise specified.
C
APL602J
600
UNIT
Symbol
Parameter
V
DSS
Drain-Source Voltage
Volts
I
D
Continuous Drain Current @ T
C
= 25°C
43
Amps
Volts
1
I
D
M
Pulsed Drain Current
172
V
GS
V
GSM
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
±30
±40
Watts
W/°C
Total Power Dissipation @ T
C
= 25°C
Linear Derating Factor
565
P
D
4.52
-55 to 150
300
T
J
,T
STG
T
L
Operating and Storage Junction Temperature Range
°C
Amps
mJ
Lead Temperature: 0.063″ from Case for 10 Sec.
1
I
AR
Avalanche Current
(Repetitive and Non-Repetitive)
43
1
E
AR
E
AS
50
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
4
3000
STATI
C
E
LECTRICA
L
C
HARACTERISTICS
Symbol Characteristic
/ Test Conditions / Part Number
MIN
600
43
TYP
MAX
UNIT
Volts
BV
DSS
I
D
(ON)
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250 µA)
On State Drain Current
2
(V
DS
> I
D
(ON) x R
DS
(ON) Max, V
GS
= 12V)
Drain-Source On-State Resistance
2
(V
GS
= 12V, 21.5A)
Zero Gate Voltage Drain Current
(V
DS
= 600V, V
GS
= 0V)
Zero Gate Voltage Drain Current
(V
DS
= 480V, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current
(V
GS
= ±30V, V
DS
= 0V)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 2.5mA)
Amps
Ohms
R
DS
(ON)
0.125
25
I
DSS
µA
250
±100
4
I
GSS
nA
V
GS
(TH)
2
Volts
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APL602J
UNIT
DYNAMIC CHARACTERISTICS
Symbol Characteristic
Test Conditions
GS
= 0V
MIN
TYP
7600
1280
620
13
MAX
9000
1810
930
26
C
iss
C
oss
C
rss
t
d
(on)
t
r
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
V
V
DS
= 25V
f = 1 MHz
pF
ns
V
GS
= 15V
V
DD
= 0.5 V
DSS
24
48
I
D
= 43A @ 25°C
t
d
(off)
t
f
58
87
Turn-off Delay Time
Fall Time
R
G
= 0.6
Ω
14
17
THERMA
L
C
HARACTERISTICS
Symbol Characteristic
MIN
TYP
MAX
.22
40
UNIT
R
θ
JC
R
θ
JA
Junction to Case
°C/W
Junction to Ambient
V
Isolation
RM
S
V
oltag
e
(50-6
0
H
z
S
inusoida
l
W
avefor
m
F
ro
m
T
erminal
s
t
o
M
ountin
g
B
as
e
f
o
r
1
M
in.)
Volts
lb•in
2500
Maximum Torque for Device Mounting Screws and Electrical Terminations.
Torque
10
1
2
3
Repetitive Rating: Pulse width limited by maximum junction
See MIL-STD-750 Method 3471
4
temperature.
Starting T = +25°C, L = 3.24mH, R
= 25
Ω
, Peak I
= 43A
j G
L
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
AP
T
R
eserve
s
t
h
e
r
igh
t
t
o
c
hange
,
w
ithou
t
n
otice
,
t
h
e
s
pecification
s
a
n
d
i
nformatio
n
c
ontaine
d
h
erein.
0.25
0.9
0.20
0.7
0.15
0.5
Note:
0.10
t
1
0.3
t
2
0.05
t
1
Duty Factor
D =
Peak T
= P
x Z
/
t
2
+ T
0.1
0.05
J
DM
θ
JC
C
SINGL
E
P
ULSE
10
-3
0
10
-5
10
-4
10
-2
10
-1
1.0
10
RECTANGULA
R
P
ULS
E
D
URATIO
N
(
SECONDS)
FIGUR
E
1
,
M
AXIMU
M
E
FFECTIV
E
T
RANSIEN
T
T
HERMA
L
I
MPEDANCE
,
J
UNCTION-TO-CAS
E
v
s
P
ULS
E
D
URATION
RC MODEL
Junction
temp. ( ”C)
0.0520
0.155
0.0261F
0.423F
Power
(Watts)
0.0126
67.451F
Case temperature
FIGUR
E
1
a
,
T
RANSIENT THERMAL IMPEDANCE MODEL
Typical Performance Curves
APL602J
120
120
100
80
V
=10V, 15 V
GS
V
=10, 15V
GS
100
80
8 V
8 V
7.5 V
7.5 V
60
60
40
20
0
7 V
7 V
40
6.5 V
6.5 V
6 V
6 V
20
0
5.5 V
5.5 V
0
50
100
150
200
250
0
5
10
15
20
25
30
V
,
D
RAIN-TO-SOURC
E
V
OLTAG
E
(
VOLTS)
V
,
D
RAIN-TO-SOURC
E
V
OLTAG
E
(
VOLTS)
DS
DS
FIGUR
E
2
,
H
IGH OUTPU
T
C
HARACTERISTICS
FIGUR
E
3
,
L
OW OUTPU
T
C
HARACTERISTICS
80
60
40
1.30
1.20
1.10
1.00
0.90
NORMALIZED TO
V
> I
(ON) x
R
(ON)MAX.
DS
DS
D
V
= 10V
@ 21.5A
GS
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
V
=10V
GS
T
= +125°C
J
20
0
V
=20V
100
GS
T
= -55°C
0.80
0.70
J
T
= +25°C
2
J
0
V
4
6
8
10
0
20
40
60
80
120
,
G
ATE-TO-SOURC
E
V
OLTAG
E
(
VOLTS)
I
,
D
RAI
N
C
URREN
T
(
AMPERES)
GS
D
FIGUR
E
4
,
T
RANSFE
R
C
HARACTERISTICS
FIGUR
E
5
,
R
(
ON
)
v
s
D
RAI
N
C
URRENT
DS
1.15
45
40
35
30
25
20
15
10
1.10
1.05
1.00
0.95
0.90
05
0
25
50
75
100
125
150
-50
0
50
100
150
T
,
C
AS
E
T
EMPERATUR
E
(
°C)
T
,
J
UNCTIO
N
T
EMPERATUR
E
(
°C)
C
J
FIGUR
E
6
,
M
AXIMU
M
D
RAI
N
C
URREN
T
v
s
C
AS
E
T
EMPERATURE
FIGUR
E
7
,
B
REAKDOW
N
V
OLTAG
E
v
s
T
EMPERATURE
APL602J
2.5
2.0
1.5
1.2
1.1
1.0
0.9
0.8
0.7
0.6
I
= 21.5A
= 12V
D
V
GS
1.0
0.5
0.0
-50 -25
0
25
50
75 100
125 150
-50 -25
0
25
50
75 100
125 150
T
,
J
UNCTIO
N
T
EMPERATUR
E
(
°C)
T
,
C
AS
E
T
EMPERATUR
E
(
°C)
J
C
FIGUR
E
8
,
O
N-RESISTANC
E
v
s
.
T
EMPERATURE
FIGUR
E
9
,
T
HRESHOL
D
V
OLTAG
E
v
s
T
EMPERATURE
172
30,000
OPERATIO
N
H
ERE
LIMITE
D
B
Y
R
(
ON)
DS
100
100µS
10,000
5,000
C
C
iss
10
5
1mS
oss
10mS
100mS
1,000
500
C
rss
1
T
=+25°C
C
T =+150°C
J
SINGL
E
P
ULSE
D
C
L
ine
.1
100
1
V
5
10
50 100
600
.01
.1
1
10
50
,
D
RAIN-TO-SOURC
E
V
OLTAG
E
(
VOLTS)
V
,
D
RAIN-TO-SOURC
E
V
OLTAG
E
(
VOLTS)
DS
DS
FIGUR
E
1
0
,
M
AXIMU
M
S
AF
E
O
PERATIN
G
A
REA
FIGUR
E
1
1, CAPACITANC
E
v
s
D
RAIN-TO-SOURC
E
V
OLTAGE
SOT-22
7
(
ISOTOP
®
)
P
ackag
e
O
utline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
8.9 (.350)
9.6 (.378)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
7.8 (.307)
8.2 (.322)
Hex Nut M4
(4 places)
25.2 (0.992)
25.4 (1.000)
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
0.75 (.030)
12.6 (.496)
0.85 (.033)
12.8 (.504)
3.3 (.129)
3.6 (.143)
1.95 (.077)
2.14 (.084)
14.9 (.587)
15.1 (.594)
* Source
Drain
30.1 (1.185)
30.3 (1.193)
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
* Source
Dimensions in Millimeters and (Inches)
Gate
ISOTOP
®
i
s
a
R
egistere
d
T
rademar
k
o
f
S
G
S
T
homson.
