Microchip-Tech-APT10021JLL
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APT10021JLL
1000V 37A 0.210
Ω
R
S
POWER MOS 7
MOSFET
S
Power MOS 7
®
is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS.
Both conduction and switching
losses are addressed with Power MOS 7
®
by significantly lowering R
DS(ON)
and Q
g
. Power
MOS 7
®
combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT’s
patented metal gate structure.
D
G
SOT-227
“UL Recognized”
ISOTOP
®
D
S
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
• Increased Power Dissipation
• Easier To Drive
G
• Popular SOT-227 Package
MAXIMUM RATINGS
Symbol Parameter
All Ratings:
T =
25°C unless otherwise specified.
C
APT10021JLL
UNIT
V
DSS
I
D
Drain-Source Voltage
1000
37
Volts
Continuous Drain Current @ T
C
= 25°C
Amps
Volts
1
I
D
M
Pulsed Drain Current
148
V
GS
V
GSM
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
C
= 25°C
Linear Derating Factor
±30
±40
Watts
W/°C
694
P
D
5.56
-55 to 150
300
T
J
,T
STG
T
L
Operating and Storage Junction Temperature Range
°C
Amps
mJ
Lead Temperature: 0.063″ from Case for 10 Sec.
1
I
AR
Avalanche Current
(Repetitive and Non-Repetitive)
37
1
E
AR
E
AS
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
50
4
3600
STATI
C
E
LECTRICA
L
C
HARACTERISTICS
Symbol Characteristic
/ Test Conditions
MIN
TYP
MAX
UNIT
Volts
Ohms
BV
DSS
R
DS(on)
Drain-Source Breakdown Voltage
(V
GS
= 0V, I
D
= 250µA)
1000
2
Drain-Source On-State Resistance
(V
GS
= 10V, 18.5A)
0.210
100
500
±100
5
Zero Gate Voltage Drain Current
(V
DS
= 1000V, V
GS
= 0V)
Zero Gate Voltage Drain Current
(V
DS
= 800V, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current
(V
GS
= ±30V, V
DS
= 0V)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 5mA)
I
DSS
µA
I
GSS
nA
V
GS(th)
Volts
3
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
DYNAMIC CHARACTERISTICS
Symbol Characteristic
APT10021JLL
Tes
t
C
onditions
MIN
TYP
MAX
UNIT
C
iss
C
oss
C
rss
Q
g
Input Capacitance
9750
1615
335
395
47
V
= 0V
GS
Output Capacitance
V
= 25V
pF
DS
f = 1 MHz
Reverse Transfer Capacitance
3
Total Gate Charge
V
= 10V
GS
V
= 500V
Q
gs
Q
gd
t
d(on)
t
r
DD
Gate-Source Charge
Gate-Drain (“Mille
r
“
) Charge
Turn-on Delay Time
Rise Time
nC
ns
I
= 37A @ 25°C
D
260
29
RESISTIV
E
S
WITCHING
V
= 15V
GS
22
V
= 500V
DD
I
= 37A @ 25°C
t
d(off)
80
Turn-off Delay Time
Fall Time
D
R
= 0.6
Ω
G
t
f
20
INDUCTIV
E
S
WITCHIN
G
@
2
5°C
6
E
on
E
off
E
on
E
off
Turn-on Switching Energy
1560
930
V
= 667V,
V =
15V
GS
DD
I
= 37A, R
= 5
Ω
Turn-off Switching Energy
D
G
µ
J
INDUCTIV
E
S
WITCHIN
G
@
1
25°C
6
2515
1250
Turn-on Switching Energy
V
= 667V, V
= 15V
GS
DD
I
= 37A, R
= 5
Ω
Turn-off Switching Energy
D
G
SOURCE-DRAI
N
D
IOD
E
R
ATING
S
A
N
D
C
HARACTERISTICS
Symbol
MIN
TYP
MAX
Characteristic / Test Conditions
UNIT
I
S
37
148
1.3
CContinuous Source Current
(Body Diode)
Amps
1
I
SM
Pulsed Source Current
Diode Forward Voltage
(Body Diode)
2
V
SD
t
rr
(V
GS
= 0V, I
S
= -37A)
Volts
ns
Reverse Recovery Time
(I
S
= -37A, dl
S
/dt = 100A/µs)
Reverse Recovery Charge
(I
S
= -37A, dl
S
/dt = 100A/µs)
1300
38.0
Q
rr
µC
dv
/
dv
5
V/ns
Peak Diode Recovery
/
dt
10
dt
THERMA
L
C
HARACTERISTICS
Symbol Characteristic
MIN
TYP
MAX
0.18
40
UNIT
R
θ
JC
R
θ
JA
Junction to Case
°C/W
Junction to Ambient
1 Repetitive
Rating: Pulse width limited by maximum junction
temperature
2 Pulse
Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See
MIL-STD-750 Method 3471
4 Starting
T = +25°C, L = 5.26mH, R
= 25
Ω
, Peak I
= 37A
j
G
L
dv
5
/
numbers reflect the limitations of the test circuit rather than the
di
dt
device itself.
I
≤
–
I
37A
/
≤
700A/µs
V
R
≤
1000V
T
≤
150
°
C
dt
S
D
J
6
Eon includes diode reverse recovery.
See figures 18, 20.
AP
T
R
eserve
s
t
h
e
r
igh
t
t
o
c
hange
,
w
ithou
t
n
otice
,
t
h
e
s
pecification
s
a
n
d
i
nformatio
n
c
ontaine
d
h
erein.
0.20
0.18
0.9
0.16
0.14
0.7
0.12
0.10
0.08
0.06
0.04
0.5
0.3
Note:
t
1
t
2
t
1
Duty Factor
D =
Peak T
= P
x Z
/
t
2
+ T
0.1
J
DM
θ
JC
C
0.02
0
0.05
SINGL
E
P
ULSE
10
-3
10
-5
10
-4
10
-2
10
-1
1.0
10
RECTANGULA
R
P
ULS
E
D
URATIO
N
(
SECONDS)
FIGUR
E
1
,
M
AXIMU
M
E
FFECTIV
E
T
RANSIEN
T
T
HERMA
L
I
MPEDANCE
,
J
UNCTION-TO-CAS
E
v
s
P
ULS
E
D
URATION
Typical Performance Curves
APT10021JLL
100
90
80
70
60
50
40
30
20
7V
6.5
V
=15 &10V
8V
GS
RC MODEL
Junction
temp. ( ”C)
6V
0.0244
0.0731F
0.701F
5.5V
Power
0.133
(Watts)
0.0218
20.065F
5V
30
10
0
Case temperature
0
5
10
15
20
25
V
,
D
RAIN-TO-SOURC
E
V
OLTAG
E
(
VOLTS)
DS
FIGUR
E
2
,
T
RANSIENT THERMAL IMPEDANCE MODEL
FIGUR
E
3
,
L
OW VOLTAGE OUTPU
T
C
HARACTERISTICS
1.40
180
NORMALIZED TO
V
> I
(ON) x
25
0
µ
SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
R
MAX.
DS(ON)
DS
D
V
= 10V
@
I =
18.5A
160
140
120
100
80
GS
D
1.30
1.20
1.10
1.00
T
= +125°C
J
V
=10V
GS
T
= +25°C
= -55°C
J
V
=20V
GS
60
T
J
40
0.90
0.80
20
0
0
1
2
3
4
5
6
7
8
0
20
40
60
80
100
V
,
G
ATE-TO-SOURC
E
V
OLTAG
E
(
VOLTS)
I
,
D
RAI
N
C
URREN
T
(
AMPERES)
GS
D
FIGUR
E
4
, TRANSFE
R
C
HARACTERISTICS
FIGUR
E
5
,
R
v
s
D
RAI
N
C
URRENT
DS(ON)
1.15
1.10
1.05
1.00
40
35
30
25
20
15
10
0.95
0.90
5
0
25
50
75
100
125
150
-50 -25
0
25
50 75 100
125 150
T
,
C
AS
E
T
EMPERATUR
E
(
°C)
T
,
J
UNCTIO
N
T
EMPERATUR
E
(
°C)
C
J
FIGUR
E
6
,
M
AXIMU
M
D
RAI
N
C
URREN
T
v
s
C
AS
E
T
EMPERATURE
FIGUR
E
7
,
B
REAKDOW
N
V
OLTAG
E
v
s
T
EMPERATURE
2.5
1.2
I
= 18.5A
= 10V
D
V
GS
1.1
1.0
0.9
0.8
2.0
1.5
1.0
0.5
0.0
0.7
0.6
-50 -25
0
25 50
75 100
125 150
-50 -25
0
25
50
75 100 125 150
T
,
J
UNCTIO
N
T
EMPERATUR
E
(
°C)
T
,
C
AS
E
T
EMPERATUR
E
(
°C)
J
C
FIGUR
E
8
,
R
vs
.
T
EMPERATURE
FIGUR
E
9
,
T
HRESHOL
D
V
OLTAG
E
v
s
T
EMPERATURE
DS(ON)
APT10021JLL
148
100
30,000
10,000
OPERATIO
N
H
ERE
LIMITE
D
B
Y
R
(
ON)
DS
100µS
C
iss
50
1mS
10
C
oss
1,000
10mS
C
T
=+25°C
rss
C
T =+150°C
J
SINGL
E
P
ULSE
10
1
10
1
100
1000
0
10
20
30
40
50
V
,
D
RAIN-TO-SOURC
E
V
OLTAG
E
(
VOLTS)
V
,
D
RAIN-TO-SOURC
E
V
OLTAG
E
(
VOLTS)
DS
DS
FIGUR
E
1
0
,
M
AXIMU
M
S
AF
E
O
PERATIN
G
A
REA
FIGUR
E
1
1, CAPACITANC
E
v
s
D
RAIN-TO-SOURC
E
V
OLTAGE
300
16
12
8
I
= 37A
D
100
V
=200V
T =+150°C
J
DS
T =+25°C
J
V
=500V
DS
V
=800V
DS
10
4
0
1
0
100
200
300
400
500
600
0.3
V
0.5
0.7
0.9
1.1
1.3
1.5
Q
,
T
OTA
L
G
AT
E
C
HARG
E
(
nC)
,
S
OURCE-TO-DRAI
N
V
OLTAG
E
(
VOLTS)
g
SD
FIGUR
E
1
2
,
G
AT
E
C
HARG
E
v
s
G
ATE-TO-SOURC
E
V
OLTAGE
FIGUR
E
1
3, SOURCE-DRAI
N
D
IOD
E
F
ORWAR
D
V
OLTAGE
400
80
V
= 667V
DD
= 5
Ω
t
R
T
d(off)
70
60
50
40
30
20
10
0
G
= 125°C
J
L = 100µH
300
t
f
V
= 667V
DD
= 5
Ω
R
T
G
= 125°C
J
200
L = 100µH
100
0
t
r
t
d(on)
5
10 15 20 25 30 35 40 45 50 55 60
(A)
FIGURE 14,
DELAY TIMES vs CURRENT
5
10 15
20 25 30
35 40 45 50 55 60
(A)
I
I
D
D
FIGURE 15, RISE
AND FALL TIMES vs CURRENT
4000
3500
3000
2500
2000
1500
1000
12,000
10,000
8,000
6,000
4,000
V
= 667V
V
I
= 667V
DD
DD
= 37A
R
= 5
Ω
G
D
T
= 125°C
T
= 125°C
J
E
J
on
E
L = 100µH
L = 100µH
off
E
ON
includes
E
ON
includes
diode reverse recovery.
diode reverse recovery.
E
on
E
off
2,000
0
500
0
5
10 15 20 25 30 35 40 45 50 55 60
(A)
0
5
10 15 20 25 30 35 40 45 50
I
R
,
G
AT
E
R
ESISTANC
E
(
Ohms)
D
G
FIGUR
E
1
6, SWITCHING ENERG
Y
v
s CURRENT
FIGURE 17, SWITCHING
ENERGY VS. GATE RESISTANCE
APT10021JLL
90%
10%
Gat
e
V
oltage
Drai
n
C
urrent
Gat
e
V
oltage
t
d(off)
T 125°C
T 125°C
J
J
t
d(on)
Drai
n
V
oltage
t
f
90%
t
r
90%
10%
0
5%
5%
Drai
n
V
oltage
10%
Drai
n
C
urrent
Switchin
g
E
nergy
Switchin
g
E
nergy
Figur
e
1
8
,
T
urn-o
n
S
witchin
g
W
aveform
s
a
n
d
D
efinitions
Figur
e
1
9
,
T
urn-of
f
S
witchin
g
W
aveform
s
a
n
d
D
efinitions
APT30DF60
V
CE
I
C
V
DD
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
SOT-22
7
(
ISOTOP
®
)
P
ackag
e
O
utline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
8.9 (.350)
9.6 (.378)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
7.8 (.307)
8.2 (.322)
Hex Nut M4
(4 places)
25.2 (0.992)
25.4 (1.000)
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
0.75 (.030)
12.6 (.496)
0.85 (.033)
12.8 (.504)
3.3 (.129)
3.6 (.143)
1.95 (.077)
2.14 (.084)
14.9 (.587)
15.1 (.594)
* Source
Drain
30.1 (1.185)
30.3 (1.193)
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
* Source
Dimensions in Millimeters and (Inches)
Gate
ISOTOP
®
i
s
a
R
egistere
d
T
rademar
k
o
f
S
G
S
T
homson. APT’
s
p
roduct
s
a
r
e
c
overe
d
b
y
o
n
e
o
r
m
or
e
o
f
U
.S.patent
s
4
,895,810
5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,05
8
a
n
d
f
oreig
n
p
atents. U
S
a
n
d
F
oreig
n
p
atent
s
p
ending. Al
l
R
ight
s
R
eserved.
