Microchip-Tech-APT10025JVR
| Part # | Microchip-Tech-APT10025JVR |
Download  | Microchip-Tech-APT10025JVR |
APT1001RBVR
1000V 11A 1.000
Ω
POWER MOS V
®
Power MOS V
®
is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
®
also achieves faster switching speeds through optimized gate layout.
TO-247
D
S
• Faster Switching
• Lower Leakage
• 100% Avalanche Tested
• Popular TO-247 Package
G
MAXIMUM RATINGS
Symbol Parameter
All Ratings:
T =
25
°
C unless otherwise specified.
C
APT1001RBVR
UNIT
V
DSS
I
D
Drain-Source Voltage
1000
11
Volts
Continuous Drain Current @ T
C
= 25
°
C
Amps
Volts
1
I
DM
Pulsed Drain Current
44
V
GS
V
GSM
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
±
30
±
40
Total Power Dissipation @ T
C
= 25
°
C
Linear Derating Factor
Watts
280
P
D
2.24
-55 to 150
300
W/
°
C
T
J
,T
STG
T
L
Operating and Storage Junction Temperature Range
°
C
Amps
mJ
Lead Temperature: 0.063″ from Case for 10 Sec.
1
I
AR
Avalanche Current
(Repetitive and Non-Repetitive)
11
1
E
AR
E
AS
30
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
4
1210
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic
/ Test Conditions
MIN
TYP
MAX
UNIT
BV
DSS
I
D(on)
Drain-Source Breakdown Voltage
(V
GS
= 0V, I
D
= 250
µ
A)
Volts
1000
11
2
On State Drain Current
(V
DS
> I
D(on)
x R
DS(on)
Max, V
GS
= 10V)
Amps
2
R
DS(on)
Drain-Source On-State Resistance
(V
GS
= 10V, 0.5 I
D[Cont.]
)
Ohms
1.00
25
Zero Gate Voltage Drain Current
(V
DS
= V
DSS
, V
GS
= 0V)
I
DSS
µ
A
Zero Gate Voltage Drain Current
(V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125
°
C)
Gate-Source Leakage Current
(V
GS
=
±
30V, V
DS
= 0V)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 1.0mA)
250
±
100
4
I
GSS
nA
V
GS(th)
Volts
2
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
EUROPE
Bend, Oregon 97702-1035
F-33700 Merignac – France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
Avenue J.F. Kennedy
Bât B4 Parc Cadéra Nord
DYNAMIC CHARACTERISTICS
Symbol Characteristic
APT1001RBVR
Test Conditions
MIN
TYP
MAX
UNIT
C
iss
C
oss
C
rss
Q
g
Input Capacitance
3050
280
135
150
16
3660
390
200
225
24
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
Output Capacitance
pF
Reverse Transfer Capacitance
3
V
GS
= 10V
Total Gate Charge
Q
gs
Q
gd
V
DD
= 0.5 V
DSS
Gate-Source Charge
Gate-Drain (“Mille
r
“
) Charge
Turn-on Delay Time
Rise Time
nC
ns
I
D
= I
D[Cont.]
@ 25
°
C
70
105
24
t
d(on)
t
r
t
d(off)
t
f
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D[Cont.]
@ 25
°
C
R
G
= 1.6
Ω
12
11
22
Turn-off Delay Time
Fall Time
55
85
12
24
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic
/ Test Conditions
MIN
TYP
MAX
11
UNIT
I
S
Continuous Source Current
(Body Diode)
Amps
1
I
SM
V
SD
t
rr
Pulsed Source Current
Diode Forward Voltage
(Body Diode)
44
2
(V
GS
= 0V, I
S
= -I
D[Cont.]
)
1.3
Volts
ns
Reverse Recovery Time
(I
S
= -I
D[Cont.]
, dl
S
/dt = 100A/
µ
s)
Reverse Recovery Charge
(I
S
= -I
D[Cont.]
, dl
S
/dt = 100A/
µ
s)
700
9
Q
rr
µ
C
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN
TYP
MAX
0.45
40
UNIT
R
θ
JC
R
θ
JA
Junction to Case
°
C/W
Junction to Ambient
1
2
3
4
Repetitive Rating: Pulse width limited by maximum junction
temperature.
See MIL-STD-750 Method 3471
Starting T = +25
°
C, L = 20mH, R
= 25
Ω
, Peak I
= 11A
j
G
L
Pulse Test: Pulse width < 380
µ
S, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.5
D=0.5
0.2
0.1
0.1
0.05
0.05
Note:
0.02
0.01
0.01
t
1
0.005
SINGLE PULSE
t
2
t
1
Duty Factor
D =
Peak T
= P
x Z
/
t
2
+ T
J
DM
θ
JC
C
0.001
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
APT1001RBVR
20
16
12
8
20
16
12
8
V
=6V, 10V & 15V
GS
V
=15V
GS
V
=6V & 10V
GS
5V
4.5V
3.5V
4.5V
4
4
4V
4V
3.5V
16
0
0
0
V
100
200
300
400
500
0
V
4
8
12
20
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
DS
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
40
1.5
T
= -55
°
C
J
NORMALIZED TO
V
= 10V
@ 0.5 I
[Cont.]
D
V
> I
(ON) x
R
(ON)MAX.
GS
DS
D
DS
T
= +125
°
C
25
0
µ
SEC. PULSE TEST
J
@ <0.5 % DUTY CYCLE
1.4
1.2
1.0
0.8
30
20
10
0
V
=10V
GS
V
=20V
GS
T
J
= +125
°
C
J
T
= -55
°
C
J
T
= +25
°
C
0
V
2
4
6
8
0
5
10
15
20
25
30
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I ,
DRAIN CURRENT (AMPERES)
GS
D
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
FIGURE 5, R
(ON) vs DRAIN CURRENT
DS
1.15
1.10
1.05
1.00
0.95
0.90
12
10
8
6
4
2
0
25
50
75
100
125
150
-50 -25
0
25 50 75 100
125 150
T ,
CASE TEMPERATURE (
°
C)
T , JUNCTION TEMPERATURE (
°
C)
C
J
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
2.5
I
= 0.5
I [Cont.]
D
D
V
= 10V
GS
1.1
1.0
0.9
0.8
0.7
0.6
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50
75 100
125 150
-50 -25
0
25 50 75
100 125 150
T , JUNCTION TEMPERATURE (
°
C)
T ,
CASE TEMPERATURE (
°
C)
J
C
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
APT1001RBVR
50
11,000
5,000
10
µ
S
OPERATION HERE
LIMITED BY R
(ON)
100
µ
S
DS
C
iss
10
5
1mS
1,000
500
C
oss
10mS
1
C
rss
.5
100mS
DC
T
T
=+25
°
C
=+150
°
C
C
J
SINGLE PULSE
100
50
.1
1
V
5
10
50 100
500 1000
.01
V
.1
1
10
50
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
DS
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
20
16
12
8
50
I
= I
[Cont.]
D
D
V
=100V
DS
=200V
T
=+150
°
C
T =+25
°
C
J
J
V
10
5
DS
V
=500V
DS
1
.5
4
0
.1
0
50
g
100
150
200
250
300
0.2
V
0.4
0.6
0.8
1.0
1.2
Q ,
TOTAL GATE CHARGE (nC)
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
SD
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
TO-247 Package Outline
4.69 (.185)
5.31 (.209)
15.49 (.610)
16.26 (.640)
1.49 (.059)
2.49 (.098)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.50 (.177) Max.
1.65 (.065)
2.13 (.084)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
Gate
Drain
Source
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’s devices are covered by one or more of the following U.S.patents:
4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
