Microchip-Tech-APT1003RBLLG
| Part # | Microchip-Tech-APT1003RBLLG |
Download  | Microchip-Tech-APT1003RBLLG |
APT1003RBLL
APT1003RSLL
1000V 4A 3.00
R
POWER MOS 7
MOSFET
D
3
PAK
TO-247
Power MOS 7
®
is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS.
Both conduction and switching
losses are addressed with Power MOS 7
®
by significantly lowering R
DS(ON)
and Q .
Power MOS 7
®
combines lower conduction and switching losses
along
g
with exceptionally fast switching speeds inherent with APT’s
patented metal gate structure.
D
S
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
• Increased Power Dissipation
• Easier To Drive
G
• TO-247 or Surface Mount D
3
PAK Package
MAXIMUM RATINGS
Symbol Parameter
All Ratings:
T =
25°C unless otherwise specified.
C
APT1003RBLL_SLL
UNIT
V
DSS
I
D
Drain-Source Voltage
1000
4
Volts
Continuous Drain Current @ T
C
= 25°C
Amps
Volts
1
I
D
M
Pulsed Drain Current
16
V
GS
V
GSM
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
C
= 25°C
Linear Derating Factor
±30
±40
139
1.11
-55 to 150
300
4
Watts
W/°C
P
D
T
J
,T
STG
T
L
Operating and Storage Junction Temperature Range
°C
Amps
mJ
Lead Temperature: 0.063″ from Case for 10 Sec.
1
I
AR
Avalanche Current
(Repetitive and Non-Repetitive)
1
E
AR
E
AS
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
10
4
425
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic
/ Test Conditions
MIN
1000
TYP
MAX
UNIT
Volts
BV
DSS
R
DS(on)
Drain-Source Breakdown Voltage
(V
GS
= 0V, I
D
= 250µA)
2
Drain-Source On-State Resistance
(V
GS
= 10V, 2A)
3.00
100
500
±100
5
Ohms
Zero Gate Voltage Drain Current
(V
DS
= 1000V, V
GS
= 0V)
Zero Gate Voltage Drain Current
(V
DS
= 800V, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current
(V
GS
= ±30V, V
DS
= 0V)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 1mA)
I
DSS
µA
I
GSS
nA
V
GS(th)
Volts
3
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
DYNAMIC CHARACTERISTICS
APT1003RBLL_SLL
Tes
t
C
onditions
Characteristic
MIN
TYP
MAX
Symbol
C
iss
C
oss
C
rss
Q
g
UNIT
Input Capacitance
694
135
25
34
5
22
8
4
V
= 0V
GS
Output Capacitance
V
= 25V
DS
pF
f = 1 MHz
Reverse Transfer Capacitance
3
V
= 10V
Total Gate Charge
GS
V
= 500V
Q
gs
Q
gd
DD
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Turn-on Delay Time
Rise Time
nC
ns
I
= 4A @ 25°C
D
RESISTIV
E
S
WITCHING
t
d(on)
t
r
V
= 15V
GS
V
= 500V
DD
I
= 4A @ 25°C
t
d(off)
25
Turn-off Delay Time
D
R
= 1.6
G
t
f
Fall Time
10
13
42
40
48
INDUCTIV
E
S
WITCHIN
G
@
2
5°C
6
E
on
E
off
E
on
E
off
Turn-on Switching Energy
V
= 667V,
V =
15V
DD
I
GS
= 4A,
R =
5
Turn-off Switching Energy
D
G
INDUCTIV
E
S
WITCHIN
G
@
1
25°C
µ
J
6
Turn-on Switching Energy
V
= 667V, V
= 15V
DD
I
GS
= 4A,
R =
5
G
Turn-off Switching Energy
D
SOURCE-DRAI
N
D
IOD
E
R
ATING
S
A
N
D
C
HARACTERISTICS
Symbol
MIN
TYP
MAX
Characteristic / Test Conditions
UNIT
I
S
I
SM
V
SD
t
rr
Q
rr
4
16
1.3
Continuous Source Current
(Body Diode)
Amps
1
Pulsed Source Current
(Body Diode)
2
Diode Forward Voltage
(V
GS
= 0V, I
S
= -I
D
4A
)
Volts
ns
Reverse Recovery Time
(I
S
= -I
D
4A
, dl
S
/dt = 100A/µs)
Reverse Recovery Charge
(I
S
= -I
D
4A
, dl
S
/dt = 100A/µs)
560
3.2
µC
V/ns
dv
dv
5
/
Peak Diode Recovery
/
dt
10
dt
THERMA
L
C
HARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
0.90
40
UNIT
R
Junction to Case
Junction to Ambient
JC
°C/W
R
JA
1 Repetitive
Rating: Pulse width limited by maximum junction
temperature
4 Starting
T
j
= +25°C, L = 53.13mH, R
G
= 25
, Peak I
L
= 4A
dv
5
6
/
numbers reflect the limitations of the test circuit rather than the
di
dt
2 Pulse
Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See
MIL-STD-750 Method 3471
device itself.
I
–
I
4A
/
700A/µs
V
V
T
150
°
C
dt
Eon includes
S
diode reverse recovery.
See figu
D
r
e
S
s
S
18, 20.
D
R
J
AP
T
R
eserve
s
t
h
e
r
igh
t
t
o
c
hange
,
w
ithou
t
n
otice
,
t
h
e
s
pecification
s
a
n
d
i
nformatio
n
c
ontaine
d
h
erein.
1.0
0.9
0.80
0.7
0.60
0.5
Note:
0.40
t
1
0.3
t
2
SINGL
E
P
ULSE
0.20
t
1
Duty Factor
D =
/
t
2
Peak T
= P
x Z
+ T
JC C
0.1
J
DM
0.05
0
-5
-4
-3
-2
-1
10
10
10
RECTANGULA
R
P
ULS
E
D
URATIO
N
(
SECONDS)
FIGUR
E
1
,
M
AXIMU
M
E
FFECTIV
E
T
RANSIEN
T
T
HERMA
L
I
MPEDANCE
,
J
UNCTION-TO-CAS
E
v
s
P
ULS
E
D
URATION
10
10
1.0
Typical Performance Curves
APT1003RBLL_SLL
=15 & 10V
10
8
V
GS
7V
7.5V
6.5V
RC MODEL
6
Junction
temp. (
q
C)
6V
0.386
0.508
0.00336F
0.0903F
4
Power
(watts)
5.5V
5V
2
Case temperature. (
q
C)
0
0
5
10
15
20
25
30
V
,
D
RAIN-TO-SOURC
E
V
OLTAG
E
(
VOLTS)
DS
FIGUR
E
2
, TRANSIENT THERMAL IMPEDANCE MODEL
FIGUR
E
3
,
L
OW VOLTAGE OUTPU
T
C
HARACTERISTICS
16
1.40
V
> I
(ON) x
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
R
(ON)MAX.
DS
NORMALIZED TO
DS
D
V
= 10V
@ 2A
GS
14
12
10
8
1.30
1.20
1.10
1.00
V
=10V
GS
T
= -55°C
J
V
=20V
6
GS
T
= +25°C
J
4
0.90
0.80
2
T
= +125°C
J
0
0
V
1
2
3
4
5
6
7
8
9
0
1
2
3
4
5
6
7
8
9
10
,
G
ATE-TO-SOURC
E
V
OLTAG
E
(
VOLTS)
FIGUR
E
4
, TRANSFE
R
C
HARACTERISTICS
I
,
D
RAI
N
C
URREN
T
(
AMPERES)
GS
D
FIGUR
E
5
,
R
(
ON
)
v
s
D
RAI
N
C
URRENT
DS
4
3.5
3
1.15
1.10
1.05
1.00
0.95
2.5
2
1.5
1
0.90
0.85
0.5
0
25
50
75
100
125
150
-50 -25
0
25
50
75 100
125 150
T
,
C
AS
E
T
EMPERATUR
E
(
°C)
T
,
J
UNCTIO
N
T
EMPERATUR
E
(
°C)
C
J
FIGUR
E
6
,
M
AXIMU
M
D
RAI
N
C
URREN
T
v
s
C
AS
E
T
EMPERATURE
FIGUR
E
7
,
B
REAKDOW
N
V
OLTAG
E
v
s
T
EMPERATURE
1.2
2.5
I
= 2A
D
V
= 10V
GS
1.1
1.0
0.9
0.8
2.0
1.5
1.0
0.5
0.0
0.7
0.6
-50 -25
0
25 50
75 100
125 150
-50 -25
0
25
50
75 100 125 150
T
,
J
UNCTIO
N
T
EMPERATUR
E
(
°C)
T
,
C
AS
E
T
EMPERATUR
E
(
°C)
J
C
FIGUR
E
8
,
O
N-RESISTANC
E
v
s
.
T
EMPERATURE
FIGUR
E
9
,
T
HRESHOL
D
V
OLTAG
E
v
s
T
EMPERATURE
APT1003RBLL_SLL
4,000
1,000
16
10
OPERATIO
N
H
ERE
LIMITE
D
B
Y
R
(
ON)
DS
5
C
iss
100µS
1
C
C
oss
100
10
.5
1mS
T
=+25°C
10mS
C
T =+150°C
J
rss
SINGL
E
P
ULSE
10
.1
1
100
1000
0
10
20
30
40
50
V
,
D
RAIN-TO-SOURC
E
V
OLTAG
E
(
VOLTS)
V
,
D
RAIN-TO-SOURC
E
V
OLTAG
E
(
VOLTS)
FIGUR
E
1
1, CAPACITANC
E
v
sDRAIN-TO-SOURC
E
V
OLTAGE
DS
DS
FIGUR
E
1
0
,
M
AXIMU
M
S
AF
E
O
PERATIN
G
A
REA
16
12
8
100
I
= 4A
D
V
=
2
00V
DS
T =+150°C
J
T =+25°C
V
=
5
00V
J
DS
V
=
8
00V
DS
10
4
0
1
0
5
10 15 20 25 30 35 40 45
50
Q
,
T
OTA
L
G
AT
E
C
HARG
E
(
nC)
0.3
V
0.5
0.7
0.9
1.1
1.3
1.5
,
S
OURCE-TO-DRAI
N
V
OLTAG
E
(
VOLTS)
g
SD
FIGUR
E
1
2
,
G
AT
E
C
HARGE
S
v
s
G
ATE-TO-SOURC
E
V
OLTAGE
FIGUR
E
1
3, SOURCE-DRAI
N
D
IOD
E
F
ORWAR
D
V
OLTAGE
25
70
V
= 667V
DD
= 5
R
T
G
t
d(off)
60
50
40
30
20
10
0
= 125°C
J
20
15
10
5
L = 100µH
V
= 667V
DD
= 5
t
f
R
T
G
= 125°C
J
L = 100µH
t
d(on)
t
r
0
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
I
(A)
I (A)
D
D
FIGURE 14,
DELAY TIMES vs CURRENT
FIGURE 15, RISE
AND FALL TIMES vs CURRENT
90
80
70
60
50
40
30
20
140
V
= 667V
V
I
= 667V
DD
DD
= 4A
R
= 5
G
D
120
100
80
T
= 125°C
T
= 125°C
E
J
off
J
E
on
L = 100µH
E
ON
includes
diode reverse recovery.
L = 100µH
E
ON
includes
diode reverse recovery.
60
E
off
40
E
on
20
0
10
0
0
1
2
3
4
5
6
7
8
0
5
10 15 20 25 30 35 40 45 50
I
(A)
R
,
G
AT
E
R
ESISTANC
E
(
Ohms)
G
D
FIGUR
E
1
6, SWITCHING ENERG
Y
v
s CURRENT
FIGURE 17, SWITCHING
ENERGY VS. GATE RESISTANCE
APT1003RBLL_SLL
10%
90%
Gat
e
V
oltage
Gat
e
V
oltage
Drai
n
C
urrent
T 125°C
T 125°C
J
J
t
d(off)
90%
Drai
n
V
oltage
t
d(on)
t
r
10%
5%
5%
0
90%
t
f
Drai
n
V
oltage
Drai
n
C
urrent
10%
Switchin
g
E
nergy
Switchin
g
E
nergy
Figur
e
1
9
,
T
urn-of
f
S
witchin
g
W
aveform
s
a
n
d
D
efinitions
Figur
e
1
8
,
T
urn-o
n
S
witchin
g
W
aveform
s
a
n
d
D
efinitions
APT15DF100
V
CE
I
C
V
DD
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
D
3
PA
K
P
ackag
e
O
utline
TO
–
247 Package Outline
4.69 (.185)
5.31 (.209)
15.49 (.610)
16.26 (.640)
1.49 (.059)
2.49 (.098)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.50 (.177) Max.
1.65 (.065)
2.13 (.084)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
Gate
Drain
Source
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’
s
p
roduct
s
a
r
e
c
overe
d
b
y
o
n
e
o
r
m
or
e
o
f
U
.S.patent
s
4
,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,05
8
a
n
d
f
oreig
n
p
atents. U
S
a
n
d
F
oreig
n
p
atent
s
p
ending. Al
l
R
ight
s
R
eserved.
