Microchip-Tech-APT100GLQ65JU3
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APT100GLQ65JU3
ISOTOP
®
buck chopper
High speed Trench + Field
Stop IGBT4 Power Module
V
CES
= 650V
I
C
= 100A* @ Tc = 80°C
Application
C
•
•
AC and DC motor control
Switched Mode Power Supplies
Features
G
•
High speed Trench + Field Stop IGBT 4
–
–
–
Low voltage drop
Low leakage current
Low switching losses
E
•
•
ISOTOP
®
Package (SOT-227)
Very low stray inductance
Benefits
A
•
•
•
•
•
•
Low conduction losses
Stable temperature behavior
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive T
C
of V
CEsat
RoHS Compliant
A
E
C
G
ISOTOP
®
All ratings @ T
j
= 25°C unless otherwise specified
Absolute maximum ratings
Symbol
Parameter
Max ratings
650
Unit
V
V
CES
Collector – Emitter Voltage
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
165*
100*
270
±20
430
I
C
Continuous Collector Current
A
I
CM
V
GE
P
D
Pulsed Collector Current
Gate – Emitter Voltage
Power Dissipation
V
W
* Specification of
IGBT device but output current must be limited due to size of output pins.
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
1 – 6
APT100GLQ65JU3
Electrical Characteristics
Symbol Characteristic
Test Conditions
V
GE
= 0V, V
CE
= 650V
Min Typ Max
Unit
I
CES
Zero Gate Voltage Collector Current
50
µA
T
j
= 25°C
T
j
= 150°C
V
GE
= V
CE
, I
C
= 1.6 mA
V
GE
= 20V, V
CE
= 0V
1.4
4.2
1.85
2.2
5.1
2.3
V
GE
=15V
I
C
= 100A
V
CE(sat)
Collector Emitter Saturation Voltage
V
GE(th)
Gate Threshold Voltage
V
5.6
150
V
nA
I
GES
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol Characteristic
Test Conditions
V
GE
= 0V
V
CE
= 25V
f = 1MHz
Min Typ Max Unit
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
6100
232
180
pF
nC
V
GE
= 15V, I
C
= 100A
Q
G
Gate charge
630
V
CE
= 480V
Inductive Switching (25°C)
V
GE
= ±15V
T
d(on)
T
r
Turn-on Delay Time
Rise Time
19
33
V
Bus
= 400V
ns
T
d(off)
Turn-off Delay Time
197
I
C
= 100A
R
G
= 3.6
Ω
T
f
Fall Time
21
Inductive Switching (150°C)
V
GE
= ±15V
T
d(on)
T
r
Turn-on Delay Time
Rise Time
19
29
V
Bus
= 400V
ns
T
d(off)
Turn-off Delay Time
227
22
I
C
= 100A
R
G
= 3.6
Ω
T
f
Fall Time
V
GE
= ±15V
E
on
Turn on Energy
T
j
= 150°C
T
j
= 150°C
2.4
V
Bus
= 400V
mJ
I
C
= 100A
R
G
= 3.6
Ω
E
off
R
G
Turn off Energy
2
2
Integrated gate resistor
Ω
A
V
GE
≤
15V ; V
Bus
= 400V
t
p
≤
5µs ; T
j
= 150°C
I
sc
Short Circuit data
700
R
thJC
Junction to Case Thermal Resistance
0.35 °C/W
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
V
RRM
Peak Repetitive Reverse Voltage
650
50
V
µA
A
I
RM
I
F
Reverse Leakage Current
DC Forward Current
V
R
= 650V
Tc = 60°C
50
T
j
= 25°C
T
j
= 150°C
1.6
1.5
2
I
F
= 50A
V
GE
= 0V
V
F
t
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
ns
T
j
= 25°C
T
j
= 150°C
T
j
= 25°C
T
j
= 150°C
T
j
= 25°C
T
j
= 150°C
100
150
2.6
5.4
0.6
1.2
I
F
= 50A
V
R
= 300V
di/dt =1800A/µs
Q
rr
µC
mJ
E
rr
Reverse Recovery Energy
R
thJC
Junction to Case Thermal Resistance
1.14 °C/W
2 – 6
APT100GLQ65JU3
IGBT parallel diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
V
RRM
Peak Repetitive Reverse Voltage
650
50
V
µA
A
I
RM
I
F
Reverse Leakage Current
DC Forward Current
V
R
= 650V
Tc = 60°C
20
T
j
= 25°C
T
j
= 150°C
1.6
1.5
2
I
F
= 20A
V
GE
= 0V
V
F
t
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
ns
T
j
= 25°C
T
j
= 150°C
T
j
= 25°C
T
j
= 150°C
T
j
= 25°C
T
j
= 150°C
100
150
1.1
I
F
= 20A
V
R
= 300V
di/dt =1600A/µs
Q
rr
µC
mJ
2.3
0.23
0.50
E
rr
Reverse Recovery Energy
R
thJC
Junction to Case Thermal Resistance
2.6 °C/W
Thermal and package characteristics
Symbol Characteristic
Min Typ
2500
-55
Max
Unit
V
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
T
J
,T
STG
Storage Temperature Range
175
T
J
max
-25
T
JOP
T
L
Recommended junction temperature under switching conditions
Max Lead Temp for Soldering:0.063” from case for 10 sec
-55
°C
300
Mounting torque
(Mounting = 8-32 or 4mm Machine and terminals = 4mm
Torque
Wt
1.5
N.m
g
Machine)
Package Weight
29.2
SOT-227 (ISOTOP
®
) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
8.9 (.350)
9.6 (.378)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
7.8 (.307)
8.2 (.322)
Hex Nut M4
(4 places)
25.2 (0.992)
25.4 (1.000)
12.6 (.496)
r = 4.0 (.157)
(2 places)
3.30 (.130)
4.57 (.180)
4.0 (.157)
4.2 (.165)
(2 places)
0.75 (.030)
0.85 (.033)
12.8 (.504)
3.3 (.129)
3.6 (.143)
1.95 (.077)
2.14 (.084)
14.9 (.587)
15.1 (.594)
30.1 (1.185)
30.3 (1.193)
Dimensions in Millimeters and (Inches)
38.0 (1.496)
38.2 (1.504)
ISOTOP® is a registered trademark of ST Microelectronics NV
3 – 6
APT100GLQ65JU3
IGBT Typical Performance Curves
Output Characteristics (V
G
E
=15V)
Output Characteristics
200
200
T
J
= 150°C
150
150
100
V
GE
=17V
V
GE
=9V
100
V
GE
=15V
T
J
=150°C
50
0
50
T
J
=25°C
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0
0.5
1
1.5
2
2.5
3
3.5
V
CE
(V)
V
CE
(V)
E
n
ergy losses vs Collector Current
Transfer
t
C
har
a
cteristics
200
150
100
50
8
6
4
2
0
V
CE
= 400V
V
GE
= 15V
R
G
= 3.6
Ω
Eon
T
J
= 150°C
T
J
=150°C
Eof f
T
J
=25°C
0
0
50
100
I
C
(A)
150
200
5
6
7
8
9
10
V
GE
(V)
S
w
i
tchin
g
E
n
ergyLosses vs Gate
R
e
sistance
Op
e
rating
F
r
e
q
u
ency vs Collector Current
5
400
V
CE
= 400V
V
GE
=15V
V
CE
=400V
D=50%
R
G
=3.6
Ω
T
J
=150°C
T
c
=85°C
ZVS
Eon
I
C
= 100A
4
3
2
1
300
200
100
0
T
J
= 150°C
ZCS
Eof f
Hard
s
w
itching
0
20
40
60
80
100
2.5
5
7.5
10
Gate R
e
s
i
s
ta
n
ce (ohms)
I
C
(A)
m
a
xi
m
u
m E
f
fec
t
ive Transien
t
T
hermal Impedan
c
e, Junction to Case vs Pulse Duration
0.4
0.3
0.2
0.1
0
D = 0.9
0.7
0.5
0.3
0.1
Single
P
u
lse
0.05
0.00001
0.0001
0.001
0.01
0.1
1
10
R
e
ctangular Pulse
D
u
ration in Seconds
4 – 6
APT100GLQ65JU3
Chopper diode Typical Performance Curves
D
i
ode For
w
a
rd Characteristic
E
n
ergy losses vs Collector Current
100
1.5
80
60
1
40
0.5
T
J
=150°C
V
CE
= 300V
20
T
J
= 150°C
T
J
=25°C
0
0
0
20
40
I
F
(A)
60
80
100
0
0.4 0.8 1.2 1.6
2
2.4
V
F
(V)
m
a
xi
m
u
m E
f
fec
t
ive Transien
t
T
hermal Impedan
c
e, Junction to Case vs Pul
s
e
D
u
ration
1.2
1
D = 0.9
0.7
0.8
0.6
0.4
0.2
0
0.5
0.3
0.1
Single
P
u
lse
0.01
R
e
ctangular Pulse
D
u
ration in Seconds
0.05
0.00001
0.0001
0.001
0.1
1
10
IGBT parallel diode Typical Performance Curves
Diode For
w
a
rd Characteristic
E
n
ergy losses vs Collector Current
40
0.8
0.6
0.4
0.2
0
35
30
25
20
V
CE
= 300V
T
J
= 150°C
15
T
J
=150°C
10
T
J
=25°C
5
0
0
10
20
30
40
0
0.4
0.8
1.2
1.6
2
2.4
I
F
(A)
V
F
(V)
m
a
xi
m
u
m E
f
fec
t
ive Transien
t
T
hermal Impedan
c
e, Junction to Case vs Pulse Duration
3
2.5
2
0.9
0.7
0.5
0.3
1.5
1
0.1
0.5
0
Single
P
u
lse
0.05
0.00001
0.0001
0.001
0.01
0.1
1
10
R
e
ctangular Pulse Duration in Seconds
5 – 6
APT100GLQ65JU3
DISCLAIMER
The information contained in the document (unless it is publicly available on the Web without access restrictions) is
PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted,
transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the
recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement
will also apply.
This document and the information contained herein may not be modified, by any person other than
authorized personnel of Microsemi.
No license under any patent, copyright, trade secret or other intellectual
property
right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication,
inducement, estoppels or
otherwise. Any
license under such intellectual property rights must be approved by
Microsemi in writing signed by an officer of Microsemi.
Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime
without any notice.
This product has been subject to limited testing and should not be used in conjunction with life-
support or other mission-critical equipment or applications.
Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
user must conduct and complete all performance and other testing of this product as well as any user or customers final
application. User or customer shall not rely on any data and performance specifications or parameters provided by
Microsemi. It
is the customer’s and user’s responsibility to independently determine suitability of any Microsemi
product and to test and verify the same. The information contained herein is provided “AS IS, WHERE IS” and with all
faults, and the entire risk associated with such information is entirely with the User. Microsemi specifically disclaims
any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product
Life Support Application
Seller’s Products are not designed, intended, or authorized for use as components in systems intended for space,
aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other
application in which the failure of the Seller’s Product could create a situation where personal injury, death or property
damage or loss may occur (collectively “Life Support Applications”).
Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees,
subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and
expenses, and attorneys’ fees and costs arising, directly or directly, out of any claims of personal injury, death, damage
or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations
that Seller was negligent regarding the design or manufacture of the goods.
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.
6 – 6
