Microchip-Tech-APT14M120S
| Part # | Microchip-Tech-APT14M120S |
Download  | Microchip-Tech-APT14M120S |
APT12057B2LL
(G)
APT12057LLL
(G)
1200V 22A 0.570
Ω
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
R
B2LL
POWER MOS 7
MOSFET
Power MOS 7
®
is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS.
Both conduction and switching
losses are addressed with Power MOS 7
®
by significantly lowering R
DS(ON)
and Q
g
. Power
MOS 7
®
combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT’s
patented metal gate structure.
T-MAX
™
TO-264
LLL
D
S
• Lower Input Capacitance
• Increased Power Dissipation
• Lower Miller Capacitance
• Easier To Drive
G
• Lower Gate Charge, Qg
MAXIMUM RATINGS
• Popular
T-MAX™
or TO-264 Package
All Ratings:
T =
25°C unless otherwise specified.
C
APT12057
(G)
UNIT
Symbol Parameter
V
DSS
I
D
Drain-Source Voltage
1200
22
Volts
Continuous Drain Current @ T
C
= 25°C
Amps
Volts
1
I
DM
Pulsed Drain Current
88
V
GS
V
GSM
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
±30
±40
Total Power Dissipation @ T
C
= 25°C
Linear Derating Factor
690
Watts
W/°C
P
D
5.52
-55 to 150
300
T
J
,T
STG
T
L
Operating and Storage Junction Temperature Range
°C
Amps
mJ
Lead Temperature: 0.063″ from Case for 10 Sec.
1
I
AR
Avalanche Current
(Repetitive and Non-Repetitive)
22
1
E
AR
E
AS
50
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
4
3000
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic
/ Test Conditions
MIN
1200
22
TYP
MAX
UNIT
BV
DSS
I
D(on)
Drain-Source Breakdown Voltage
(V
GS
= 0V, I
D
= 250µA)
Volts
2
On State Drain Current
(V
DS
> I
D(on)
x R
DS(on)
Max, V
GS
= 10V)
Amps
2
R
DS(on)
Drain-Source On-State Resistance
(V
GS
= 10V, 0.5 I
D[Cont.]
)
Ohms
µA
0.570
100
500
±100
5
Zero Gate Voltage Drain Current
(V
DS
= V
DSS
, V
GS
= 0V)
I
DSS
Zero Gate Voltage Drain Current
(V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current
(V
GS
= ±30V, V
DS
= 0V)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 2.5mA)
I
GSS
nA
V
GS(th)
Volts
3
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT12057 B2LL – LLL
(G)
DYNAMIC CHARACTERISTICS
Symbol Characteristic
MIN
TYP
MAX
UNIT
Test Conditions
C
iss
C
oss
C
rss
Q
g
Input Capacitance
5155
770
130
187
24
6200
1080
200
290
29
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
Output Capacitance
pF
Reverse Transfer Capacitance
3
V
GS
= 10V
Total Gate Charge
V
DD
= 0.5 V
DSS
Q
gs
Q
gd
t
d(on)
t
r
nC
ns
Gate-Source Charge
Gate-Drain (“Mille
r
“
) Charge
Turn-on Delay Time
Rise Time
I
D
= I
D[Cont.]
@ 25°C
120
11
180
22
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D[Cont.]
@ 25°C
R
G
= 0.6
Ω
20
40
t
d(off)
t
f
Turn-off Delay Time
Fall Time
36
54
21
30
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
I
S
MIN
TYP
MAX
22
Characteristic / Test Conditions
UNIT
Continuous Source Current
(Body Diode)
Amps
1
I
SM
88
Pulsed Source Current
Diode Forward Voltage
(Body Diode)
2
V
SD
t
r
r
(V
GS
= 0V, I
S
= -I
D[Cont.]
)
1.3
Volts
ns
Reverse Recovery Time
(I
S
= -I
D[Cont.]
, dl
S
/dt = 100A/µs)
1291
29
Q
rr
Reverse Recovery Charge
(I
S
= -I
D[Cont.]
, dl
S
/dt = 100A/µs)
µC
dv
/
5
Peak Diode Recovery
dv
/
V/ns
10
dt
dt
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN
TYP
MAX
0.18
40
UNIT
R
θ
JC
R
θ
JA
Junction to Case
°C/W
Junction to Ambient
1
2
3
4
5
Repetitive Rating: Pulse width limited by maximum junction
temperature.
Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
See MIL-STD-750 Method 3471
Starting T = +25°C, L = 12.40mH, R
= 25
Ω
, Peak I
= 22A
j
G
L
dv
/
numbers reflect the limitations of the test circuit rather than the
di
dt
device itself.
I
S
≤
–
I
/
≤
700A/µs
V
R
≤
V
T
≤
150
°
C
J
dt
D Cont.
[
DSS
]
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.2
D=0.5
0.1
0.05
0.2
0.1
0.05
Note:
0.01
t
1
0.02
0.01
0.005
t
2
t
1
Duty Factor
D =
Peak T
= P
x Z
/
t
2
+ T
SINGL
E
P
ULSE
J
DM
θ
JC
C
0.001
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
10
RECTANGULA
R
P
ULS
E
D
URATIO
N
(
SECONDS)
FIGUR
E
1
,
M
AXIMU
M
E
FFECTIV
E
T
RANSIEN
T
T
HERMA
L
I
MPEDANCE
,
J
UNCTION-TO-CAS
E
v
s
P
ULS
E
D
URATION
Typical Performance Curves
APT12057 B2LL – LLL
(G)
50
45
40
35
30
25
20
15
10
V
=15,10 & 8V
GS
7V
6.5V
Graph Deleted
6V
5.5V
5V
5
0
0
5
10
15
20
25
30
V
,
D
RAIN-TO-SOURC
E
V
OLTAG
E
(
VOLTS)
DS
FIGUR
E
2
,
H
IG
H
V
OLTAGE OUTPU
T
C
HARACTERISTICS
FIGUR
E
3
,
L
OW VOLTAGE OUTPU
T
C
HARACTERISTICS
80
1.40
NORMALIZED TO
V
> I
(ON) x
R
(ON)MAX.
DS
DS
D
V
= 10V
@
0.5
I
[Cont.]
25
0
µ
SEC. PULSE TEST
GS
D
70
60
50
40
30
20
@
<0.5 % DUTY CYCLE
1.30
1.20
1.10
1.00
V
=10V
GS
V
=20V
GS
T
= +125°C
J
T
= -55°C
8
J
0.90
0.80
10
0
T
= +25°C
J
0
2
4
6
10
0
5
10
15
20
25
30
35
40
V
,
G
ATE-TO-SOURC
E
V
OLTAG
E
(
VOLTS)
I
,
D
RAI
N
C
URREN
T
(
AMPERES)
GS
D
FIGUR
E
4
, TRANSFE
R
C
HARACTERISTICS
FIGUR
E
5
,
R
(
ON
)
v
s
D
RAI
N
C
URRENT
DS
25
20
15
10
1.15
1.10
1.05
1.00
0.95
0.90
0.85
5
0
25
50
75
100
125
150
-50 -25
0
25
50 75 100
125 150
T
,
C
AS
E
T
EMPERATUR
E
(
°C)
T
,
J
UNCTIO
N
T
EMPERATUR
E
(
°C)
C
J
FIGUR
E
6
,
M
AXIMU
M
D
RAI
N
C
URREN
T
v
s
C
AS
E
T
EMPERATURE
FIGUR
E
7
,
B
REAKDOW
N
V
OLTAG
E
v
s
T
EMPERATURE
2.5
1.2
I
= 0.5
I
[Cont.]
D
D
V
= 10V
GS
1.1
1.0
0.9
0.8
2.0
1.5
1.0
0.5
0.0
0.7
0.6
-50 -25
0
25 50
75 100
125 150
-50 -25
0
25
50
75 100 125 150
T
,
J
UNCTIO
N
T
EMPERATUR
E
(
°C)
T
,
C
AS
E
T
EMPERATUR
E
(
°C)
J
C
FIGUR
E
8
,
O
N-RESISTANC
E
v
s
.
T
EMPERATURE
FIGUR
E
9
,
T
HRESHOL
D
V
OLTAG
E
v
s
T
EMPERATURE
APT12057 B2LL – LLL(G)
88
20,000
10,000
5,000
OPERATIO
N
H
ERE
LIMITE
D
B
Y
R
(
ON)
DS
100µS
C
iss
10
5
1mS
1,000
500
C
oss
10mS
T
=+25°C
C
T =+150°C
J
C
SINGL
E
P
ULSE
10
rss
50
,
D
RAIN-TO-SOURC
E
V
OLTAG
E
(
VOLTS)
DS
100
1
1
V
100
1200
0
V
10
20
30
40
,
D
RAIN-TO-SOURC
E
V
OLTAG
E
(
VOLTS)
DS
FIGUR
E
1
0
,
M
AXIMU
M
S
AF
E
O
PERATIN
G
A
REA
FIGUR
E
1
1, CAPACITANC
E
v
s
D
RAIN-TO-SOURC
E
V
OLTAGE
16
200
I
= I
[Cont.]
D
D
100
12
V
=100V
DS
T =+150°C
J
T =+25°C
J
V
=250V
DS
8
V
=400V
DS
10
4
0
1
0
50
100
150
200
250
300
0.3
V
0.5
0.7
0.9
1.1
1.3
1.5
Q
,
T
OTA
L
G
AT
E
C
HARG
E
(
nC)
,
S
OURCE-TO-DRAI
N
V
OLTAG
E
(
VOLTS)
g
SD
FIGUR
E
1
2
,
G
AT
E
C
HARGE
S
v
s
G
ATE-TO-SOURC
E
V
OLTAGE
FIGUR
E
1
3, SOURCE-DRAI
N
D
IOD
E
F
ORWAR
D
V
OLTAGE
T-MAX
TM
(B2) Package Outline
TO-264 (L) Package Outline
e1 SAC: Tin, Silver, Copper
e1 SAC: Tin, Silver, Copper
4.69 (.185)
4.60 (.181)
5.31 (.209)
15.49 (.610)
16.26 (.640)
5.21 (.205)
19.51 (.768)
20.50 (.807)
1.49 (.059)
2.49 (.098)
1.80 (.071)
2.01 (.079)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
20.80 (.819)
21.46 (.845)
25.48 (1.003)
26.49 (1.043)
2.87 (.113)
3.12 (.123)
4.50 (.177) Max.
2.29 (.090)
2.69 (.106)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
19.81 (.780)
21.39 (.842)
Gate
Gate
1.01 (.040)
1.40 (.055)
Drain
Source
Drain
Source
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
Dimensions in Millimeters and (Inches)
